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TPC8029TOSHIBAN/a12000avaiPower MOSFET (N-ch single VDSS≤30V)


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TRSF3223ECDBR ,3-V to 5.5-V Multichannel RS-232 Line Driver/Receiver 20-SSOP 0 to 70FEATURESDB, DW, OR PW PACKAGE• ESD Protection for RS-232 Bus Pins(TOP VIEW)–±15-kV Human-Body Model ..
TRSF3223EIDBR ,3-V to 5.5-V Multichannel RS-232 Line Driver/Receiver 20-SSOP -40 to 85Flexible control options for power management are available when the serial port is inactive. Theau ..
TRSF3232ECD ,3-V to 5.5-V Two-Channel RS-232 1-Mbit/s Line Driver/Receiver 16-SOIC 0 to 70Maximum Ratingsover operating free-air temperature range (unless otherwise noted)MIN MAX UNIT(2)V S ..
TRSF3232ECDBR ,3-V to 5.5-V Two-Channel RS-232 1-Mbit/s Line Driver/Receiver 16-SSOP 0 to 70maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functi ..
TRSF3232ECDBRG4 ,3-V to 5.5-V Two-Channel RS-232 1-Mbit/s Line Driver/Receiver 16-SSOP 0 to 70FEATURESD, DB, DW, OR PW PACKAGE• Operates With 3-V to 5.5-V V SupplyCC (TOP VIEW)• Operates up to ..
TRSF3232ECPWR ,3-V to 5.5-V Two-Channel RS-232 1-Mbit/s Line Driver/Receiver 16-TSSOP 0 to 70.Please be aware that an important notice concerning availability, standard warranty, and use in cr ..


TPC8029
Power MOSFET (N-ch single VDSS≤30V)
TPC8029 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8029

Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)

Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
Weight: 0.08 g (typ.)
Circuit Configuration
8 6
1 2 3 5
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