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TN6727AFSCN/a2420avaiPNP General Purpose Amplifier
TN6727AFAIRCHILDN/a24000avaiPNP General Purpose Amplifier


TN6727A ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C ..
TN6727A ,PNP General Purpose AmplifierTN6727A TN6727AC TO-226 B E PNP General Purpose Amplifier This device is ..
TN6729A ,PNP General Purpose Amplifier
TN6729A ,PNP General Purpose Amplifier
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TN6727A
PNP General Purpose Amplifier
TN6727A TN6727A C TO-226 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. f for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Value Symbol Parameter Units Collector-Emitter VoltageV V V VCBO Emitter-Base Voltage5V V - Continuous1.5A IC -55 to +150 TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Symbol Characteristic Units TN6727A Total Device Dissipation1W PD 8mW/°C Thermal Resistance, Junction to Case°C/W RqJC Thermal Resistance, Junction to Ambient°C/W RqJA Ó 1997 1 of 2 Page 125 50 above 25°C Derate °COperating and Storage Junction Temperature Range Collector Current EBO 50Collector-Base Voltage CES 40 TN6726Arom Process 77. See Sourced
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