TN6718A ,NPN General Purpose AmplifierTN6718A TN6718AC TO-226 B E NPN General Purpose Amplifier This device is ..
TN6719A ,NPN High Voltage Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TN6725A ,NPN Darlington Transistorapplications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C ..
TN6725A ,NPN Darlington Transistorapplications requiring extremely high current gain at collector currents to 1A. from Process 05 ..
TN6725A ,NPN Darlington TransistorTN6725A Discrete Power & Signal Technologies TN6725AC TO-226 B E NPN Darl ..
TN6726A ,PNP General Purpose AmplifierTN6726A / NZT6726TN6726A NZT6726CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is de ..
TPS73018DBVR ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear RegulatorBlock Diagrams... 912 Mechanical, Packaging, and Orderable7.3 Feature Description.... 10Information ..
TPS73018DBVRG4 ,LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORSElectrical Characteristics ...... 511.2 Documentation Support.... 186.6 Typical Characteristics. 61 ..
TPS73018DBVT ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear RegulatorMaximum Ratings(1)over operating junction temperature range (unless otherwise noted)MIN MAX UNITInp ..
TPS73018DBVTG4 ,LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORS SBVS054J–NOVEMBER 2004–REVISED APRIL 20155 Pin Configuration and FunctionsDBV PackageDBV Package5- ..
TPS7301QD ,Lowest Dropout (LDO) PMOS Voltage Regulator with Integrated Supply Voltage Supervisorblock diagramINRESISTOR DIVIDER OPTIONSDEVICE R1 R2 UNIT¶¶ ¶ENTPS7301 0 ∞ WTPS7325 260 233 kWRESETT ..
TPS7301QDR ,Lowest Dropout (LDO) PMOS Voltage Regulator with Integrated Supply Voltage Supervisorblock diagramINRESISTOR DIVIDER OPTIONSDEVICE R1 R2 UNIT¶¶ ¶ENTPS7301 0 ∞ WTPS7325 260 233 kWRESETT ..
TN6718A
NPN General Purpose Amplifier
TN6718A TN6718A C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. from Process 39. See A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Value Symbol Parameter Units Collector-Emitter VoltageV VCEO V VCBO Emitter-Base Voltage5V V - Continuous1.2A IC -55 to +150 TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Symbol Characteristic Units TN6718A Total Device Dissipation1W PD 8mW/°C Thermal Resistance, Junction to Case°C/W RqJC Thermal Resistance, Junction to Ambient°C/W RqJA ã Rev Atn6718a.lwp 1997 Fairchild Semiconductor 125 50 above 25°C Derate °COperating and Storage Junction Temperature Range Collector Current EBO 100Collector-Base Voltage 100 TN6717Sourced
