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TN6716AFSCN/a5730avaiNPN General Purpose Amplifier


TN6716A ,NPN General Purpose AmplifierTN6716A TN6716AC TO-226 B E NPN General Pu ..
TN6717A ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TN6717A ,NPN General Purpose AmplifierTN6717A / NZT6717TN6717A NZT6717CECBTO-226CB SOT-223ENPN General Purpose AmplifierThis device is de ..
TN6718A ,NPN General Purpose AmplifierTN6718A TN6718AC TO-226 B E NPN General Purpose Amplifier This device is ..
TN6719A ,NPN High Voltage Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TN6725A ,NPN Darlington Transistorapplications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C ..
TPS73001DBVR ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear Regulatorfeatures high power-supplyWith Enablerejection ratio (PSRR), low noise, fast start-up, and• Availab ..
TPS73001DBVRG4 ,LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORSMaximum Ratings condition statement . 4• Deleted Dissipation Ratings table; added Thermal Informati ..
TPS73001DBVT ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear RegulatorMaximum Ratings.. 410.3 Thermal Considerations.... 166.2 ESD Ratings ...... 410.4 Power Dissipation ..
TPS73001DBVTG4 ,LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORSfeatures high power-supplyWith Enablerejection ratio (PSRR), low noise, fast start-up, and• Availab ..
TPS73018DBVR ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear RegulatorBlock Diagrams... 912 Mechanical, Packaging, and Orderable7.3 Feature Description.... 10Information ..
TPS73018DBVRG4 ,LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORSElectrical Characteristics ...... 511.2 Documentation Support.... 186.6 Typical Characteristics. 61 ..


TN6716A
NPN General Purpose Amplifier
TN6716A TN6716A C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to . from Process 38. See for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units Collector-Emitter VoltageV VCEO V VCBO Emitter-Base Voltage5V V - Continuous2A IC -55 to +150 TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Symbol Characteristic Units T°CA Total Device Dissipation 1W PD 8mW/°C Thermal Resistance, Junction to Case°C/W RqJC Thermal Resistance, Junction to Ambient°C/W RqJA Pr ã 1997 Fairchild Semiconductor revCTN6716A.SAM38 125 50 above 25°C Derate =25 °COperating and Storage Junction Temperature Range Collector Current EBO 60Collector-Base Voltage 60 TN6715ASourced1.2A
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