TN6714A ,NPN General Purpose AmplifierTN6714A / NZT6714TN6714A NZT6714CECBTO-226CSOT-223BENPN General Purpose AmplifierThis device is des ..
TN6715A ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TN6715A ,NPN General Purpose AmplifierTN6715A / NZT6715TN6715A NZT6715CECBTO-226CB SOT-223ENPN General Purpose AmplifierThis device is de ..
TN6715A ,NPN General Purpose AmplifierTN6715A / NZT6715TN6715A NZT6715CECBTO-226CB SOT-223ENPN General Purpose AmplifierThis device is de ..
TN6716A ,NPN General Purpose AmplifierTN6716A TN6716AC TO-226 B E NPN General Pu ..
TN6717A ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TPS72728YFFR ,250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator 4-DSBGA -40 to 125Block Diagram... 1112 Mechanical, Packaging, and Orderable7.3 Feature Description.... 11Information ..
TPS728185315YZUR ,Single Output LDO, 200mA, Dual Level Fixed with Vset Pin 5-DSBGA -40 to 125ELECTRICAL CHARACTERISTICSOver operating temperature range (T = –40°C to +125°C), V = V + 0.5V or 2 ..
TPS728185315YZUT ,Single Output LDO, 200mA, Dual Level Fixed with Vset Pin 5-DSBGA -40 to 125FEATURES DESCRIPTION2• Very Low Dropout: 230mV Typical at 200mAThe TPS728xx series of low-dropout l ..
TPS73001DBVR ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear Regulatorfeatures high power-supplyWith Enablerejection ratio (PSRR), low noise, fast start-up, and• Availab ..
TPS73001DBVRG4 ,LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORSMaximum Ratings condition statement . 4• Deleted Dissipation Ratings table; added Thermal Informati ..
TPS73001DBVT ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear RegulatorMaximum Ratings.. 410.3 Thermal Considerations.... 166.2 ESD Ratings ...... 410.4 Power Dissipation ..
TN6714A
NPN General Purpose Amplifier
TN6714A / NZT6714 TN6714A NZT6714 C E C B TO-226 C SOT-223 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 2.0 A C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN6714A *NZT6714 P Total Device Dissipation 1.0 1.0 W D Derate above 25 C 8.0 8.0 mW/ C ° ° R Thermal Resistance, Junction to Case 50 °C/W θJC R Thermal Resistance, Junction to Ambient 125 125 C/W ° θJA 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . 1997
