TN3725A ,NPN Switching Transistorapplicationsup to collector currents of 1.0 A. Sourced from Process 25.Absolute Maximum Ratings ..
TN-4033 ,PNP General Purpose Amplifierapplications at currents to 500 mA and collector voltages up to 70V.Sourced from Process 67.Absolut ..
TN41A ,PROGRAMMABLE UNI JUNCTION TRANSISTOR SILICON PLANAR NPN THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIMER APPLICATIONS
TN41A ,PROGRAMMABLE UNI JUNCTION TRANSISTOR SILICON PLANAR NPN THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIMER APPLICATIONS
TN4R02 ,RCC Power Supply Switching RegulatorsElectrical Characteristics at Ta=25°CRatingsParameter Symbol Conditions Unitmin typ max[MOSFET]Drai ..
TN5415A ,PNP High Voltage AmplifierTN5415ADiscrete POWER & SignalTechnologiesTN5415ATO-226CBEPNP High Voltage AmplifierThis device ..
TPS7233QPWR ,Micropower Very Low Dropout (LDO) PMOS Voltage Regulatormaximum ratings over operating free-air temperature range (unless otherwise noted)*Input voltage ra ..
TPS7248QD ,Micropower Very Low Dropout (LDO) PMOS Voltage Regulatorfeatures a logic-enabled sleep mode to shut down the regulator, reducing quiescent currentto 0.5 m ..
TPS7248QD ,Micropower Very Low Dropout (LDO) PMOS Voltage Regulatorfeatures a logic-enabled sleep mode to shut down the regulator, reducing quiescent currentto 0.5 m ..
TPS7248QDRG4 , MICROPOWER LOW-DROPOUT (LDO) VOLTAGE REGULATORS
TPS7248QP ,Micropower Very Low Dropout (LDO) PMOS Voltage Regulatorblock diagramIN RESISTOR DIVIDER OPTIONS§DEVICE R1 R2 UNIT§§ENTPS7201 0 ∞ WTPS7225 257 233 kWPGTPS7 ..
TPS72501 , LOW INPUT VOLTAGE, 1-A LOW-DROPOUT LINEAR REGULATORS WITH SUPERVISOR
TN3725A
NPN Switching Transistor
TN3725A / MMPQ3725 Discrete POWER & Signal Technologies TN3725A MMPQ3725 B E B E B E B E C C C C C C TO-226 C C C B SOIC-16 E NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 60 V CBO VEBO Emitter-Base Voltage 6.0 V I Collector Current - Continuous 1.2 A C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN3725A MMPQ3725 P Total Device Dissipation 1.0 1.0 W D 8.0 8.0 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 50 °C/W JC Thermal Resistance, Junction to Ambient 125 RθJA °C/W Effective 4 Die 125 °C/W Each Die 240 °C/W 1997
