TN2907A ,PNP General Purpose AmplifierTN2907A — PNP General Purpose AmplifierSeptember 2007TN2907APNP General Purpose Amplifier• This dev ..
TN2-L-4.5V , SLIM POLARIZED RELAY
TN2-L-5V , SLIM POLARIZED RELAY
TN3012L ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. C, 16-Jul-0111-3r – On-Resistance ( )DS(on)r – On-Resistance ( )DS(on) I – Drai ..
TN3012L ,Enhancement-Mode MOSFET TransistorsTN3012LVishay SiliconixN-Channel 300-V (D-S) MOSFET V Min (V) r Max () V (V) I (A)(BR) ..
TN3012L ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. C, 16-Jul-0111-1TN3012LVishay Siliconix ..
TPS72218DBVT ,Cap Free, Low Noise, Low Input Voltage 50mA Low Dropout RegulatorFEATURESvoltages for operation, these regulators can be 50-mA LDOoperated directly from two AAA ba ..
TPS72218DBVT ,Cap Free, Low Noise, Low Input Voltage 50mA Low Dropout Regulator TPS72216, TPS72218 (3,00 mm x 3,00 mm)SLVS390B – DECEMBER 2001 – REVISED MAY 2002LOW INPUT VOLTAGE ..
TPS72218DBVTG4 ,50-mA, Cap Free, Low Input Voltage, Low-Dropout Linear Regulator 5-SOT-23 -40 to 125maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
TPS72218DBVTG4 ,50-mA, Cap Free, Low Input Voltage, Low-Dropout Linear Regulator 5-SOT-23 -40 to 125FEATURESvoltages for operation, these regulators can be 50-mA LDOoperated directly from two AAA ba ..
TPS7225QD ,Micropower Very Low Dropout (LDO) PMOS Adjustable Voltage Regulatorfeatures a logic-enabled sleep mode to shut down the regulator, reducing quiescent currentto 0.5 m ..
TPS7225QPWR ,Micropower Very Low Dropout (LDO) PMOS Adjustable Voltage Regulatorfeatures include a power-good function that reports low output voltageJand may be used to implement ..
TN2907A
PNP General Purpose Amplifier
TN2907A — PNP General Purpose Amplifier September 2007 TN2907A PNP General Purpose Amplifier • This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. • Sourced from process 63. 1 TO-226 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current - Continuous 800 mA C T , T Operating and Storage Junction Temperature Range -55 ~ 150 °C J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 °C/W θJA © 2007 TN2907A Rev. 1.0.0 1
