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TMM24256BP-20 |TMM24256BP20TOSHN/a190avai200ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory


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TMM24256BP-20
170ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory
T0itll:lll]lflyljl WNW giEliiiEWif [0l?y)y)y2gR)
TMM242568P/BF-I 7, -20
DESCRIPTION
The TyfN2k256BP/BF is a 32,768 wordsx 8 bits one time programmable read only memory,
and molded in a 28 pin plastic package.
The TMM24256BP/BF'S access time is l70ns/200ns, and has low power standby mode which
reduces the power dissipation without increasing access time.
The electrical characteristics and programming method are the same as U.V. EPROM
TMM27256
Once progamed, the TMM24256BP/BF can not be erased because of using plastic DIP without
transparent window.
FEATURES . Full static operation
. High speed programming mode I, ll
17 20 . Inputs and outputs TTL compatible
- - . Pin compatible with TMM27256D/AD/BD
VCC svtsz . Standard 28 pin DIP plastic package: TMM24256BP
tACC l70ns 200ns . Plastic Flat Package: TMM24256BF
ICC2 lOOmA BLOCK DIAGRAM
TCCI 30mA I WE V? "i' 7 oi'oioi"i0ioioi'o;
PIN CONNECTION (TOP VIEW) OEo- OE cnfgm OUTPUT BUFFERS
VPPE 1 V 28 JVcc I 1 ,
AIZI: 2 273AI4 Aoo-
A7t3 260A13 A10. ti, COLUMN 14 cmmw um
AGE 4 253A8 Mo-- ' DECODER ' CIRCUIT
ASE 5 24 3A9 A3o--
Mn 6 233A11 Ado-- 2 1
A3 7 223tTg ‘22: t'.
Mt 8 ZIJAIO 270* b' 9 ROW 512 MEMORY CELL
Alt 9 20 rc-E Mo- © / DECODER I ARRAY .
AOEIO 19207 Mo- g 32,768x8hits
00:11 18306 AI0o- ti
01:12 17305 Allow til
02:13 16304 213:: <
GNDE14 15103 AI4o-
PIN NAMES MODE SELECTION
AOAIAIA Address Inputs PIN c-E OT Vpp VCC 00'u07 POWER
004107 Outputs (Inputs) MODE (20) (22) (1) (28) (11'u13,15'u19)
5E Chip Enable Input Read D 1 'i a Data Out Active
OE Output Enable Input Outpu ese ec SV SV High Impedance
Standby H * High ImpedanceStandby
Program Supply
VPP Program L ll I) 1) Data In
Voltage . . 12.5V 6V .
P S 1 Program Inhibit ll ll 2) 2) High Impecance Active
Vcc over upp y Program Verify * L 12.75v 6.25V Data Out
Voltage (+SV)
*: ll or 1): HIGH SPEED PROGRAMMING MODE I
GND Ground 2): HIGH SPEED PROGRAMMING MODE II
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MAX IMUM RAT I NGS
SYMBOL ITEM RATING UNIT
VCC Vcc Power Supply Voltage -0.6 m 7.0 V
Vpp Program Supply Voltage -O.6 N 14.0 V
VIN Input Voltage -0. 6 m 7 A) V
VI/O Input/Output Voltage -0.6 N 7 .0 ll
PD Power Dissipation 1.0/0.6* w
TSOLDER Soldering Temperature . Time 260 . 10 "C . sec
TSTG Storage Temperature -55 'u 150 "c
TOPR Operating Temperature 0 N 70 "c
*: Plastic Flat Package
READ OPERATION
D.C. RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER MIN . TYP . MAX . UNIT
VIH Input High Voltage 2.0 - vcc+1.o v
Ilu, Input Low Voltage -0.3 - 0.8 V
Vcc Vcc Power Supply Voltage 4.75 5.00 5.25 v
vpp Vpp Power Supply Voltage 2.0 VCC VCC+0.6 ll
D.C. AND OPERATING CHARACTERISTICS (Ta=0'u 70''C, VCC=5ViSZ)
SYMBOL PARAMETER CONDITION MIN . TYP . MAX . UNIT
ILI Input Current 1r1N=0'uvcc - - tlt) ph
ICC]. Supply Current (Standby) tTr5---vw - - 30 mA
ICC2 Supply Current (Active) C_E=VIL - - 100 mA
Von Output High Voltage 10H=-aoopA 2.4 - -
vor, Output Low Voltage IOL=2.lmA - - 0.4 ll
1991 Vpp Current vPP=0s1lCC+0.6V - - :10 PA
ILO Output Leakage Current 1rour--0.lWsvcc - - t10 pA
- K-4--
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A.C. CHARACTERISTICS (Ta=0s70''C, Vcc=5VtSZ, vPP--2.0v'uvcc+0.6v)
SYMBOL PARAMETER 'mN2Ir256BP/BF-17 TMM24256BP/BF-20 UNIT
MIN. MAX. MIN. MAX.
tACC Address Access Time - 170 - 200 ns
tCE E to Output Valid - 170 - 200 ns
tog 5? to Output Valid - 7O - 70 ns
tDFl CE to Output in High-Z 0 60 0 60 ns
tDF2 6? to Output in High-Z o 60 o 60 ns
toil Output Data Hold Time 0 - 0 - ns
A.C. TEST CONDITIONS
. Output Load I 1 TTL Gate and C =100pF
. Input Pulse Rise and Fall Times t 10ns Max.
. Input Pulse Levels t 0.45V“:2.4V
. Timing Measurement Reference Level: Inputs 0.8V and 2.0V, Outputs 0.8V and 2.0V
CAPACITANCE* (Ta=25°C, f=lMHz)
SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
CIN Input Capacitance VIN=0V - 4 6 pF
Cour Output Capacitnace VOUT=OV - 8 12 pF
* This parameter is periodically sampled and is not 100% tested.
TIMING WAVEFORMS (READ)
A0 ~Al4 x
CE ",t . Z /
BT:" 't tOE /7////////1////////////
tACC tor,
HIGH Z HIGH Z
00~07 DATA OUTPUTS y-"-"'-""--
'n'lliift42li6BPNF1 T, -20
PROGRAM OPERATION (HIGH SPEED PROGRAMMING MODE I)
D.C. RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
VIH Input High Voltage 2.0 - Vcc+l.0 v
VIL Input Low Voltage -0.3 - 0.8 V
vCC Vcc Power Supply Voltage 5.75 6.0 6.25 V
VPP VPP Power Supply Voltage 12.0 12.5 13.0 V
D.C. AND OPERATING CHARACTERISTICS (Ta----25ct5''C, 1lcty---6We0.25v, VPP---12.5le0.5V)
SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
ILI Input Current VIN=ONIVCC - - :t10 PA
Von Output High Voltage IOH=-400uA 2.4 - - V
VOL Output Low Voltage IOL=2.lmA - - 0.4 V
ICC Vcc Supply Current - - - 100 mA
Ippz VPP Supply Current VPP=13.OV - - 50 mA
A.C. PROGRAMMING CHARACTERISTICS (Ta=25t5''C, 1rcc=61r.r-0.25v, Vpp=12-5V10-5V)
SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
tAS Address Setup Time - 2 - - us
tAH Address Hold Time - 2 - - us
tCES CE Setup Time - O - - ns
teen ere Hold Time - o - - ns
tOES Cfg Setup Time - 2 - - us
tDS Data Setup Time - 2 - - us
tDH Data Hold Time - 2 - - us
tVPs VPP Setup Time - 2 - - us
tvcs Vcc Setup Time - 2 - - us
th Initial Program Pulse Width EE=VIL, 5E=VIH 0.95 1.0 1.05 ms
topw Overprogram Pulse Width Note 1 2.85 3.0 78.75 ms
tor: 6? to Output Valid Ei=vIH - - 150 ns
tDFP " to Output in iugh-Z EE=VIH - - 130 ns
A.C. TEST CONDITIONS
- Output Load .' l TTL Gate and CL (lOOpF)
. Input Pulse Rise and Fall Times ' lOns Max.
. Input Pulse Levels t 0.4SVN:2.AV
. Timing Measurement Reference Level: Input 0.8V and 2.0V, Output 0.8V and 2.0V
Note 1: The length of the overprogram pulse may vary as a function of the counter
value X.
--k-6--
PROGRAM OPERATION
D.C. RECOMMENDED OPERATING CONDITIONS
(HIGH SPEED PROGRAMMING MODE Ir)
TMlll242ii6BM1F1T, -20
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
VIH Input High Voltage 2.0 - Vcc+l.0 V
VIL Input Low Voltage -0.3 - 0.8 V
VCC VCC Power Supply Voltage 6.0 6.25 6.5 ll
Vpp VPP Power Supply Voltage 12.5 12.75 13.0 ll
D.C. AND OPERATING CHARACTERISTICS (Ta---25i:5''C, Vcc=6.251l:t0.25v, Vpp=12.75ViO.25V)
SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
ILI Input Current 1lw--z0't,1rcc - - :10 PA
VOH Output High Voltage I0H=‘400UA 2.4 - - V
VOL Output Low Voltage I0L=2.lmA - - 0.4 V
ICC VCC Supply Current - - - 100 mA
IPP2 Vpp Supply Current vPP=13.0V - - 50 mA
A.C. PROGRAMMING CHARACTERISTICS
(Ta=25t5°C, Irctya'6.25v'-0.25v, 1rPe--'12.75v:t0.25v)
SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
tAS Address Setup Time - 2 - - us
CAH Address Hold Time - 2 - - us
tCEs CE Setup Time - o - - ns
tCEH CE Hold Time - 0 - - ns
tOES 5? Setup Time - 2 - - us
tDS Data Setup Time - 2 - - us
tDH Data Hold Time - 2 - - US
tVPS Vpp Setup Time - 2 - - us
tvcs Vcc Setup Time - 2 - - us
tpw Program Pulse Width C"=VIL, "EEVIH 0.095 0.1 0.105 ms
tog E: to Output Valid 573:le - - 150 ns
tDFP 5E to Output in High-Z _E=VIH - - 130 ns
A.C. TEST CONDITIONS
Output Load '
Input Pulse Rise and Fall Times
Input Pulse Levels
Timing Measurement Reference Level:
1 TTL Cate cnd CL (lOOpF)
10ns Max.
0.45Vm2.4V
Input 0.8V and 2.0V, Output 0.8V and 2.0V
- k-7-
Ti'l1l'l24fmtnWBF1 T, -20
TIMING HAVEFORMS (PROGRAM)
HIGH SPEED PROGRAMMING MODE I (vcc=6vt0.25Ir, 1rPP=12.51l+-0.511)
HIGH SPEED PROGRAMMING MODE ll (vcc--6.25vto.25v, Vpp=12.75Vi0.25V)
A0 --Al 4 X ,
tAs tAH
ff tpw
t)0(XXX)()()(XXX)0()(X)%
\ topw ‘CEH (ifififlgifi%itfifN) tCES
toss tDFP
or: \ /
t FS tDH tot:
oo--" ------------l DIN STABLE F----------] DOUT VALID F-------
t VCS PROGRAM PROGRAM VER I FY
/' tVPS
Note 1. VCC must be applied simultaneously or before VPP and cut off
simultaneously or after Vpp.
2. Removing the device from socket and setting the device in socket
with VPP=12.5ViO.5V or 1rit--12.751r-t0.25v may cause permanent damage
to the device.
3. The VPP supply voltage ls permitted up to 14V for program operation.
So the voltage over 14V should not be applied to the VPP terminal.
Wen the switching pulse voltage is applied to the VPP terminal,
the overshoot voltage of Its pulse should not: be exceeded 14V.
--K-8--
OPERATION INFORMATION
The T5fN24256BP/BF's six operation modes are listed in the following table.
Mode selection can be achieved by applying TTL level signal to all inputs.
PIN-NAME (NUMBER) TE (f VPP Vcc 00 N 07
MODE (20) (22) (1) (28) (11s13, 154119)
Read L L Data Out .
Read Operation Active
tt Output Deselect * H SV SV High Impedance
(Ta=0'u70 C)
Standby ll * High Impedance Standby
Pro ram L H Data In
Program Operation. g l) 1)
o Program Inhibit ll 12.5V 6V High Impedance Active
(Ta=25i5 C) 2) 2)
Program Verify * L 12.75V 6.25V Data Out
Note: H; IrrH, L; VIL, *; VIH or VIL 1); HIGH SPEED PROGRAMMING MODE I
2); HIGH SPEED PROGRAMMING MODE Ir
READ MODE
The TMM24256BP/BF has two control functions. The chip enable (tW) controls the
operation power and should be used for device selection.
The output enable (Wi) control the output buffers, independent of device selection.
Assuming the TiF-tTir-va, the output data is valid at the outputs after address access
time from stabilizing of all addresses.
The Cff'to output valid (tCE) is equal to the address access time (tACC).
Assuming that EievIL and all addresses are valid, the output data is valid at the
outputs after tog from the falling edge of CE.
OUTPUT DESELECT MODE
Assuming that EEEVIH or 5E=VIH, the outputs will be in high impedance state.
So two or more TtfN2ti256BP/BF's can be connected together on a common bus line.
When Wis decoded for device selection, all deselected devices are in low power
standby mode.
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TMMZ42563P/BF-I T, "20
STANDBY MODE
The TMM24256BP/BF has a low power standby mode controlled by the -CTsignal.
By applying a high level to the éi'input, the Tnf24256BP/BF is placed in the standby
mode which reduce the operating current to 30mA from lOOmA (about Tor, reduction) by
applying ITL-high level and then the outputs are in a high impedance state,
independent of the 5E-inputs.
PROGRAM MODE
Initially, when received by customers, all bits of the TMM24256BP/BF are in the
"I" state which is erased state.
Therefore the program operation is to introduce "0's" data into the desired bit
locations by electrically programming.
The TMM24256BP/BF is in the programming mode when the VPP input is at 12.5V or 12.75V
and GE is at TTL-Low level under 5E=VIH.
The TMM24256BP/BF can be programmed any location at anytime either individucally,
sequentially, or at random.
PROGRAM VERIFY MODE
The verify mode is to check that desired data ls correctly programmed on the
programmed bits.
The verify is accomplished with 'ij-fl' at VIL and CE at VIH or VIL-
PROGRAM INHIBIT MODE
Under the condition that the program voltage (12.5V or 12.75V) is applied to
VPP terminal, a TTL high level tTi: input inhibits the 'rtM2tr256BP/BF from being
programmed.
Programming of two or more TMM24256BP/BF's in parallel with different data is easily
accomplished. That ls, all inputs except for Tit- and Gi'may be commonly connected,
and a TTL Low level program pulse is applied to the C-tfoe the desired device only and
TTL high level signal is applied to the other devices.
-K-10---
TrMl242titW/BF1 T, -20
HIGH SPEED PROGRAMMING MODE I
This high speed programming mode I is performed at VCC=6.0V and VPP=12'5V'
The programming is achieved by applying a single TTL low level lms pulse to the “f
input after addresses and data are stable. Then the programmed data is verified by
using Program Verify Mode.
If the programmed data is not correct, another program pulse of lms is applied and
then the programmed data is verified. This should be repeated until the program
operates correctly (max. 25 times).
After correctly programming the selected address, the additional program pulse with
pulse width 3 times that needed for initial programming is applied.
When programming has been completed, the data in all addresses should be verified
with VCC=VPP=5V.
HIGH SPEED PROGRAMMING MODE ll
The program time can be greatly decreased by using this high speed programming
mode Ir. This high speed programming mode H is performed at Vcc=6.25V and
VPP=12.75V. The programming is achieved by applying a single TTL low level 0.1ms
pulse to the EE'input after addresses and data are stable. Then the programmed data
is verified by using Program Verify Mode.
If the programmed data is not correct, another program pulse of 0.1ms is applied and
then the programmed data is verified. This should be repeated until the program
operates correctly (max. 25 times).
When programming has been completed, the data in all addresses should be verified
with Vcc=VpP=5V.
--K-11-
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Tia |‘v1242568P/BF-I T, '20
HIGH SPEED PROGRAMMING MODE I FLOH CHART
vcc=sot025v
Vpp=125i05V
ADDRESS
= START ADDRESS
ADDRESS OVERPROGRAM 3X PULSES OF lmsec
=NEXT ADDRESS 0R ONE PULSE or' 3X msec DURATION
Vcc = 5.0 V
VPP = 5.0 V
-k-12-
'l©l0242litarNF1 T; "20
HIGH SPEED PROGRAM/ING MODE E FLOW CHART
VCC = 6.25 i 0.25 v
I/pp Tir. 12.75 * 0.25v
ADDRES S
= START ADDRESS
PROGRAM 2 TPW= 0.1ms
ADRESS
= NEXT ADDRESS
-K-13--
TMMMZSBBP/BF-l 7, '20
ELECTRIC SIGNATURE MODE
Electric signature mode allows to read out a code from TyM2tr256BP/BF which
identifies its manufacturer and device type.
The programming equipment may read out manufacturer code and device code from
TMM24256BP/BF by using this mode before program operation and automatically set
program voltage (Vpp) and algorithm.
Electric Signature mode is set up when 12y is applied to address line A9 and the
rest of address lines is set to VIL in read operation. Data ouptut in this con-
ditions is manufacturer code. Device code is identified when address A0 ls set to
vw. These two codes possess an odd parity with the parity bit of MSB (07).
The following table shows electric signature of TMM24256BP/BF.
PINS A0 07 06 05 04 O3 02 Ol 00 HEX.
SIGNATURE (10) (19) (18) (17) (16) (15) (13) (12) (11) DATA
Manufacture Code VIL l 0 0 l l 0 0 0 98
Device Code VIH O 1 0 1 0 l 0 O 54
Notes: A9=12Vt0.5V
AI rt, A8 , A10s A14 , TW, CT=VIL
--K-14--
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OUTLINE DRAWINGS (TMM24256BP)
Unit in mm
r-Tr-TI-nr-tr-tr-St-tr-tr-tter-tr-heir'",
u..gk-Tuab.-IS-Iu-dh-JE-JTagh-aiAE-a-GL.5
g. I 38.0MAX. J 5' 1524:to.25
--r.--. I
- tt +g.15
z:' osims 025 .0
"i'i' 1.4d:0.15 ty-IS'
Note 1. Each lead pitch is 2.54mm. A11 leads are located within 0.25mm of
their true longitudinal position with respect No.1 and No.28 leads.
2. This value is measured at the end of leads.
3. All dimensions are in millimeters.
.--K-15--
TWJ24Ei6liWl1Fl T,, ‘20
OUTLINE DRAWINGS (TNM2h256BF)
Unit in mm
'ii'iuinruioruu/h'
(ill-ll-ll-lol-lol-ll]"")]
l 18.9MAX. I
2.5 MAX.
[0451005
1 1.8 d: 0.3
1.5d:0.4
0.1 $0.]
Note: Lead pitch ls 1.27 and tolerance ls $0.12 against theoretical
center of each lead that is obtained on the basis of No.1 and
No.28 leads.
-k-16-

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