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TLV341IDBVRTIN/a9avaiLow-Voltage, Rail-To-Rail Output CMOS Operational Amplifiers with Shutdown
TLV341IDCKRTIN/a395avaiLow-Voltage, Rail-To-Rail Output CMOS Operational Amplifiers with Shutdown
TLV341IDRLRTIN/a3929avaiLow-Voltage, Rail-To-Rail Output CMOS Operational Amplifiers with Shutdown 6-SOT -40 to 125


TLV341IDRLR ,Low-Voltage, Rail-To-Rail Output CMOS Operational Amplifiers with Shutdown 6-SOT -40 to 125 SLVS568D–JANUARY 2005–REVISED APRIL 20165 Pin Configuration and FunctionsTLV341 DBV or DCK Package ..
tlV342 ,Low-Voltage, Rail-to-Rail Output CMOS Operational Amplifiers 10-X2QFN -40 to 125 SLVS568D–JANUARY 2005–REVISED APRIL 20165 Pin Configuration and FunctionsTLV341 DBV or DCK Package ..
TLV342AIDR ,Low-Voltage, Rail-to-Rail Output CMOS Operational Amplifiers 8-SOIC -40 to 125Features 3 DescriptionThe TLV34xx devices are single and dual CMOS1• 1.8-V and 5-V Performanceopera ..
TLV342IDGKR ,Low-Voltage, Rail-to-Rail Output CMOS Operational Amplifiers 8-VSSOP -40 to 125TLV342S RUG Package10-Pin X2QFNTop View1IN−101IN+ 9 1OUT1GND 2 8 NCSHDN 3 7 V+4 62IN+ 2OUT52IN−Pin ..
TLV342IDR ,Low-Voltage, Rail-to-Rail Output CMOS Operational Amplifiers 8-SOIC -40 to 125Electrical Characteristics: V = 5 V 7+11.3 Trademarks..... 196.9 Shutdown Characteristics: V = 1.8 ..
TLV342IRUGR ,Low-Voltage, Rail-to-Rail Output CMOS Operational Amplifiers 10-X2QFN -40 to 125Features 3 DescriptionThe TLV34xx devices are single and dual CMOS1• 1.8-V and 5-V Performanceopera ..
TN2524N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
TN2524N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
TN2524N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
TN2524N8-G , N-Channel Enhancement-Mode Vertical DMOS FET
TN2540-600G ,25A SCRSTN25 and TYNx25 Series®STANDARD 25A SCRs MAIN
TN2540N8-G , Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET


TLV341IDBVR-TLV341IDCKR-TLV341IDRLR
Low-Voltage, Rail-To-Rail Output CMOS Operational Amplifiers with Shutdown
Input Offset Voltage: 0.3 mV (Typical) Low Supply Current:70 μA/Channel Low Shutdown Current: pA (Typical) Per Channel Gain Bandwidth: 2.3 MHz (Typical) Slew Rate: 0.9 V/μs (Typical) Turnon Time From Shutdown:5μs (Typical) Input Referred Voltage Noise (at10 kHz): nV/√Hz ESD Protection Exceeds JESD22 2000-V Human-Body Model (HBM) 750-V Charged-device model (CDM) Applications Cellular Phones Consumer Electronics (Laptops) Audio Preamplifier for Voice Portable and Battery-Powered ElectronicEquipment Supply Current Monitoring Battery Monitoring Buffers
(1) Forall available packages, see the orderable addendumat
the endofthe data sheet.
Sample and Hold Circuit Using Two TLV341
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