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TLV341AIDBVRTIN/a28000avaiLow-Voltage, Rail-To-Rail Output CMOS Operational Amplifiers with Shutdown 6-SOT-23 -40 to 125


TLV341AIDBVR ,Low-Voltage, Rail-To-Rail Output CMOS Operational Amplifiers with Shutdown 6-SOT-23 -40 to 125Features 3 DescriptionThe TLV34xx devices are single and dual CMOS1• 1.8-V and 5-V Performanceopera ..
TLV341IDBVR ,Low-Voltage, Rail-To-Rail Output CMOS Operational Amplifiers with ShutdownFeatures 3 DescriptionThe TLV34xx devices are single and dual CMOS1• 1.8-V and 5-V Performanceopera ..
TLV341IDBVRE4 , LOW-VOLTAGE RAIL-TO-RAIL OUTPUT CMOS OPERATIONAL AMPLIFIERS WITH SHUTDOWN
TLV341IDCKR ,Low-Voltage, Rail-To-Rail Output CMOS Operational Amplifiers with ShutdownElectrical Characteristics: V = 5 V 7+11.3 Trademarks..... 196.9 Shutdown Characteristics: V = 1.8 ..
TLV341IDRLR ,Low-Voltage, Rail-To-Rail Output CMOS Operational Amplifiers with Shutdown 6-SOT -40 to 125 SLVS568D–JANUARY 2005–REVISED APRIL 20165 Pin Configuration and FunctionsTLV341 DBV or DCK Package ..
tlV342 ,Low-Voltage, Rail-to-Rail Output CMOS Operational Amplifiers 10-X2QFN -40 to 125 SLVS568D–JANUARY 2005–REVISED APRIL 20165 Pin Configuration and FunctionsTLV341 DBV or DCK Package ..
TN2435N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
TN2460L ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. D , 16-Jul-0111-3r – Drain-Source On-Resistance ( Ω )DS(on)I – Drain Current (mA)(Norm ..
TN2460T ,Enhancement-Mode MOSFET TransistorsTN2460L/TN2460TVishay SiliconixN-Channel 240-V (D-S) MOSFET   Part Number V Min (V) r Max ..
TN2524N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
TN2524N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
TN2524N8 , N-Channel Enhancement-Mode Vertical DMOS FETs


TLV341AIDBVR
Low-Voltage, Rail-To-Rail Output CMOS Operational Amplifiers with Shutdown
Input Offset Voltage: 0.3 mV (Typical) Low Supply Current:70 μA/Channel Low Shutdown Current: pA (Typical) Per Channel Gain Bandwidth: 2.3 MHz (Typical) Slew Rate: 0.9 V/μs (Typical) Turnon Time From Shutdown:5μs (Typical) Input Referred Voltage Noise (at10 kHz): nV/√Hz ESD Protection Exceeds JESD22 2000-V Human-Body Model (HBM) 750-V Charged-device model (CDM) Applications Cellular Phones Consumer Electronics (Laptops) Audio Preamplifier for Voice Portable and Battery-Powered ElectronicEquipment Supply Current Monitoring Battery Monitoring Buffers
(1) Forall available packages, see the orderable addendumat
the endofthe data sheet.
Sample and Hold Circuit Using Two TLV341
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