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TLP814
PHOTO-INTERRUPTER INFRARED LED + PHOTOTRANSISTOR
TOSHIBA
TOSHIBA PHOTO-INTERRUPTER INFRARED LED+PHOTOTRANSlSTOR
TLP81l4
TLP814
MOTOR ROTATION AND IRIS DETECTION FOR
CAMERAS
TRACK DETECTION IN MICRO FLOPPY DISK
0 Very small package
0 High resolution
: 1.5mm
: Slit width = 0.4mm
0 Current transfer ratio : IC/IF = 2% (min)
0 Can be mounted directly on PCB using the
stand off of lead.
MAXIMUM RATINGS (Ta = 25°C)
TOSHIBA
11-13H1
Weight .' 0.1 g (typ.)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current IF 50 mA
Cl Forward Current Derating
m AI o - . mA o
.4 (Ta > 25°C) F/ C 0 67 / C
Reverse Voltage VR 5 V
m Collector-Emitter Voltage VCEO 35 V
O Emitter-Collector Voltage VECO 5 V
S Collector Power Dissipation PC 75 mW
WI Collector Power Dissipation
F O - O
m Derating (Ta > 25°C) APC/ C 1 mW/ C
Cl Collector Current IC 20 mA
Operating Temperature Range Topr -25--85 "C
Storage Temperature Range Tstg -40--100 ''C
TOSHIBA TLP814
OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
Q Forward Voltage VF IF = 10mA 1.00 1.15 1.30 V
a Reverse Current IR VR = 5V - - 10 PA
Peak Emission Wavelength AP IF = 5mA - 940 - nm
(8) Dark Current ID (ICEO) VCE = 20V, IF = 0 - - 0.1 pzA
3 Peak Sensitivity Wavelength AP - 800 - nm
a Current Transfer Ratio IC/ IF VCE = 0.6V, IF = 5mA 2 5 - %
Collector-Emitter Saturation
.4 = = -
b Voltage VCE (sat) IF 8mA, IC 0.1mA 0.1 0.4 V
O Ri Ti t = = - 50 -
Q me .1me r V09 5V, IC 0.2 mA, #5
Fall Time tf RL - 1 k0 (Note) - 50 -
(Note) : tr, tf Test circuit
IF -I-I_.
F =-- I C' CC 0%
-ovouT 10%
tRI, td
PRECAUTIONS
The following points must be borne in mind.
1. Soldering temperature : 260°C max
Soldering time : 5 s max
(Soldering must be performed 1.5mm under the package body.)
2. Ensure that no residual flux or chemicals adhere to the light-emitting and light-receiving surfaces.
ENVIRONMENT
O The device should not be exposed to corrosive gases, such as hydrogen sulfide gas and a sea breeze.
C) The device should not be exposed to dust.
C) The device should not be exposed to direct sunlight.
In essence, the device should not be subjected to any load which may result in deformation or
performance deterioration.
CIRCUIT DESIGN
0 Conversion efficiency falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in conversion efficiency over time.
The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is
IC/IF (t) - Po (t)
IC/IF(0)" P0(0)
2 2002-04-04
TOSHIBA TLP814
PACKAGE DIMENSIONS
11-13H1 Unit : mm
N cu. 0. _V‘_
g g'. C) c--
I I +0.15
. 1.5 o
= 4.1102 >
4 4210.2 7
Ii-A - , 2-(CO-5)
A Aw. A
W' __ Center of
cu W. A sensor
N. Pt v
- ---A' C V l? max l
l *1 0.15:0.1
L (2.54)_
Cross section between A and A'
2 H H a
1 p p 4 ( ):Reference value
Weight : 0.1 g (typ.)
PIN CONNECTION
1. Anode
2. Cathode
3. Emitter
4. Collector
3 2002-04-04
TOSHIBA
0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
IF - VF (mm
0.8 0.9 1.0 1.1 1.2 1.3 1.4
FORWARD VOLTAGE " (V)
IC - IF (typ.)
Ta = 25°C
COLLECTOR CURRENT 10 (mA)
l 3 10 30 100 300 1000
FORWARD CURRENT y (mA)
ALLOWABLE COLLECTOR POWER
DISSIPATION PC (mW)
CURRENT TRANSFER RATIO
IC/IF (%)
10 (mA)
COLLECTOR CURRENT
TLP814
20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
IC/IF - IF (typ.)
Ta = 25''C
1 3 10 30 100
FORWARD CURRENT IF (mA)
IC - VCE (typ.)
Ta = 25°C
IF = 2.5 mA
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA
RELATIVE COLLECTOR, CURRENT
COLLECTOR-EMIT’I‘ER SATURATION
VOLTAGE VCE(sat) (V)
RELATIVE IC - Ta
- 20 O 20 40 60
AMBIENT TEMPERATURE Ta
VCE (sat) - Ta
-20 0 20 40 60
AMBIENT TEMPERATURE Ta
(typ.)
IF=5mA
(typ.)
DARK CURRENT IDflCEO) (pA)
SWITCHING TIME
TLP814
ID (ICEO) - Ta (typ.)
20 40 60 80 100 120
AMBIENT TEMPERATURE Ta (°C)
SWITCHING CHARACTERISTICS
(NON SATURATED OPERATION) ( .)
Ta = 25''C tr
REPETITIVE
FREQUENCY = 1kHz tr
DUTY = 50%
VOUT = 1 V
0.3 0.5 1 3 5 10 30 50
LOAD RESISTANCE RL (k9)
TOSHIBA
SWITCHING TIME (#s)
RELATIVE COLLECTOR CURRENT
SWITCHING CHARACTERISTICS
(SATURATED OPERATION) (typ.)
Ta=25°C tf
Vcc=5V
VOUT; 4.6V
Ip=8mA
1 3 5 10 30 50 100 300 500
LOAD RESISTANCE RL (f2)
DETECTION POSITION
CHARACTERISTICS (2) (typ.)
SHUTTER
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
DISTANCE d (mm)
RELATIVE COLLECTOR CURRENT
TLP814
DETECTION POSITION
CHARACTERISTICS (1) (typ.)
- -o, +
A / W9
" SHUTTER
-1.6 -0.8 o 0.8 1.6
DISTANCE d (mm)
SWITCHING TIME TEST CIRCUIT
TOSHIBA TLP814
RESTRICTIONS ON PRODUCT USE
000707EAC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
O The information contained herein is subject to change without notice.
7 2002-04-04
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