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TLP750
Photocoupler GaA .As Ired + Photo IC
TLP750 TOSHIBA Photocoupler GaAℓAs Ired + Photo IC
TLP750 Degital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Analog Signal Isolation
The TOSHIBA TLP750 consists of GaAℓAs high−output light emitting
diode and a high speed detector of one chip photo diode−transistor.
This unit is 8−lead DIP.
TLP750 has no internal base connection, and is suitable for application in
noisy environmental conditions. Switching speed: tpHL=0.3µs(typ.) Switching speed: tpLH=0.5µs(typ.)(RL=1.9kΩ) UL recognized: UL1577, file No. E67349 BSI approved: BS EN60065: 1994,
Certificate No.7613
BS EN60950: 1992, Certificate No.7614 Isolation voltage: 5000Vrms(min.) Option(d4)type
VDE approved: DIN VDE0884/06.92,
Certificate No.68384
Maximum operating insulation voltage: 890VPK
Highest permissible over voltage: 8000VPK
(Note) When a VDE0884 approved type is needed,
please designate the “Option(D4)” Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)
Insulation thickness: 0.4mm(min.)
Pin Configuration (top view) 1
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : Emitter
6 : Collector
7 : N.C.
8 : Cathode
Schematic VCCICC
GND
Weight: 0.54g
Unit in mm
