IC Phoenix
 
Home ›  TT49 > TLN201,INFRARED LED GaAlAs INFRARED EMITTER
TLN201 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
TLN201TOSN/a29avaiINFRARED LED GaAlAs INFRARED EMITTER


TLN201 ,INFRARED LED GaAlAs INFRARED EMITTERTLN201TOSHIBA INFRARED LED GaA8As INFRARED EMITTERINFRARED LED FOR PHOTOSENSORS Unit : mmOPTO-ELECT ..
TLOE1002A , Toshiba TLxE1002A SMT LEDs
TLOE1005A ,LED LAMPTOSHIBA TICM005A(T03)TLRE1 005A (T03), TLOE1 005A (T03), TLYE1 005A (T03), TLSU1 005A (T03)TLOU1 00 ..
TLOE1100 ,LEDTOSHIBA TL(RE,SE,OE,YE,GE,PGE)1100(T11)TLRE1 100 (T1 1), TLSE1 100 (T1 1), TLOE1 100 (T1 1)TLYE1 10 ..
TLOF1060 , Panel Circuit Indicator
TLOH9203 ,Orange LED for sensorsAbsolute Maximum Ratings Weight: 0.1 g (typ.) (Unless Otherwise Specified ,Ta = 25℃) Characteristi ..
TMP88PU77F , CMOS 8-BIT Microcontroller
TMP88PU77F , CMOS 8-BIT Microcontroller
TMP88PU77F , CMOS 8-BIT Microcontroller
TMP89FH42UG , Microcomputers / Microcomputer Development Systems
TMP89FM42LUG , Microcomputers / Microcomputer Development Systems
TMP89FS60UG , Microcomputers / Microcomputer Development Systems


TLN201
INFRARED LED GaAlAs INFRARED EMITTER
TOSHIBA
TLN201
TOSHIBA INFRARED LED GaA8As INFRARED EMITTER
TLN201]
INFRARED LED FOR PHOTOSENSORS
OPTO-ELECTRONIC SWITCHES
TAPE AND CARD READERS
SMOKE SENSORS
EQUIPMENT USING INFRARED TRANSMISSION
T0-18 metal package.
High radiant power : Po = 5mW(typ.)
High radiant intensity : IE = 35 mW/ sr(typ.)
Excellent radiant-intensity linearity. Modulation by pulse
operation and high frequency is possible.
Highly reliable due to hermetic seal
Same external shape as TPS708 photodiode
MAXIMUM RATINGS (Ta = 25°C)
Unit : mm
955.8 max
é4.7-0.15
2- f 0.45 :0.1 I
13 min
2.54Hc0.3
TOSHIBA 4-5Q2
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current IF 100 mA
Forward Current Derating o o
(Ta > 25°C) AIF/ C -1 mA/ C
Pulse Forward Current (Note) IFP 1 A
Reverse Voltage VR 5 V
Operating Temperature Range T0pr -40-125 "C
Storage Temperature Range Tstg -55-150 T
(Note) '. Pulse width s 100 ps, repetitive frequency = 100 Hz
MARKINGS
Product No. (TL omitted)
7TN201H T) [j [1
Letter color : Red
A, Monthly lot number
Weight .' 0.33 g (typ.)
PIN CONNECTION
lo-M-og
1. Cathode
2. Anode (ease)
(J anuary to December denoted by letters A to L respectively)
Lug- J Ld Ld i L Month of manufacture
Year of manufacture
(last digit of year of manufacture)
TOSHIBA TLN201
OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
Forward Voltage VF IF = 50 mA - 1.5 1.9 V
Pulse Forward Voltage VFP IFP = 1 A - 5.0 - V
Reverse Current IR VR = 5 V - - 10 PA
Radiant Intensity IE IF = 50 mA 20 35 - mW/ sr
Radiant Power Po IF = 50 mA - 5 - mW
Capacitance CT VR = 0, f = 1 MHz - 17 - pF
Peak Emission Wavelength AP IF = 50 mA - 880 - nm
Spectral Line Half Width AA IF = 50mA - 80 - nm
Half Value Angle rl, IF = 50mA - i7 - o
PRECAUTIONS
Please be careful of the followings.
1. Soldering temperature : 260°C max
Soldering time : 5 s max
(Soldering must be performed 1.5m from the bottom of the package.)
2. When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
3. Radiant intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 :1.
IE (t) - Po (t)
IE (0) - Po (0)
2 2002-03-20
TOSHIBA TLN201
IF - Ta IFP - VFP (typ.)
ALLOWABLE FORWARD CURRENT IF (mA)
0 20 40 60 80 1 00 1 20 140
AMBIENT TEMPERATURE Ta CC)
PULSE FORWARD CURRENT [pp
IF - " (typ.)
PULSE WIDTH s 100 Ms
2 50 REPETITIVE
E FREQUENCY = 100 Hz
- T = 2 CF
31 30 Ta=100°C a 5c
F o 1 2 3 4 5 6 7
re, PULSE FORWARD VOLTAGE va (V)
E 5 IE - IF (WE)
E 3 PULSE WIDTH s 100 ps
2 REPETITIVE
FREQUENCY = 100 Hz
1 Ta = 25°C
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 A
FORWARD VOLTAGE VF (V) is!
WAVELENGTH CHARACTERIISTIC g
( yp.) 33
F 50 mA tr"
Ta = 25°C 'i
760 800 840 880 920 960 1000 1 3 10 30 100 300 1000
WAVELENGTH l (nm) FORWARD CURRENT lp (mA)
3 2002-03-20
TOSHIBA
TLN201
COLLECTOR CURRENT 10 (mA)
RADIATION PATTERN (typ.)
(Ta = 25°C)
20° IO'' 0 IO'' 20°
30° 30°
40° 40°
50° ----- 50°
60'' 60°
0 0.2 0.4 0.6 0.8 1.0
RELATIVE INTENSITY
COUPLING CHARACTERISTIC WITH
TPSSOI
Ta = 25''C
IE = 25.5 mW/sr
TPSSOIA USING SAMPLE
IL = 226 PA
at VCE = 3 V
E = 0.1 mW/cm2
=ED G]:
1 3 5 10 30 60 100 300 500 1000
DISTANCE d (mm)
RELATIVE RADIANT INTENSITY
ALLOWABLE PULSE FORWARD CURRENT
RELATIVE IE - Ta
(typ.)
20 40 60 80 100 120 140
AMBIENT TEMPERATURE Ta
IFP - PW
10 kHz 2 kHz 500 Hz
5 kHz 1 kHz
30,1 100,. 300p 1m
PULSE WIDTH Pw (s)
200 Hz
3m 10m
TOSHIBA TLN201
RESTRICTIONS ON PRODUCT USE
000707EAC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
O The information contained herein is subject to change without notice.
5 2002-03-20
:
www.loq.com
.
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED