TK75A06K3 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK7A45DA ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 M A Ф0.2 Characteristics Symbol Rating Unit 2.54 2 ..
TK7A50D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 3.57 ..
TK7A55D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 3.57 ..
TK7A60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TK7A65D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TLP921 ,Photoreflective Sensor Infrared LED + Phototransistor
TLPGE1100 ,LEDTOSHIBA TL(RE,SE,OE,YE,GE,PGE)1100(T11)TLRE1 100 (T1 1), TLSE1 100 (T1 1), TLOE1 100 (T1 1)TLYE1 10 ..
TLPGE1100 ,LEDTOSHIBA TL(RE,SE,OE,YE,GE,PGE)1100(T11)TLRE1 100 (T1 1), TLSE1 100 (T1 1), TLOE1 100 (T1 1)TLYE1 10 ..
TLPGF1060 , Panel Circuit Indicator
TLR346T ,LED DISPLAY
TLR346T ,LED DISPLAY
TK75A06K3
Power MOSFET (N-ch single 30V<VDSS≤60V)
TK75A06K3
MOSFETs Silicon N-channel MOS (U-MOS )
TK75A06K3TK75A06K3TK75A06K3TK75A06K3
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 4.5 mΩ (typ.)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Ta
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
