TK4P60DB ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 1.14MAX 2.29 Characteristics Symbol Rating Unit 0.76 ± 0.12 Dr ..
TK4P60DB ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 1.56 ..
TK500 , 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH
TK500AE , 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH AND ENHANCED ESD PROTECTION
TK50F15J1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwis ..
TK50P03M1 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TLP627 ,PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTORTLP627,TLP627-2,TLP627-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP627,TLP627-2,TLP627 ..
TLP627-2 ,PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTORPIN CONFIGURATION (TOP VIEW) Weight: 0.54 g TLP627 TLP627-2 TLP627-4 8 1 4 1 1 162 7 2 152 3 6 1: A ..
TLP627-4 ,PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTORPIN CONFIGURATION (TOP VIEW) Weight: 0.54 g TLP627 TLP627-2 TLP627-4 8 1 4 1 1 162 7 2 152 3 6 1: A ..
TLP628 ,Photocoupler GaAs Ired & Photo -TransistorPin Configurations (top view)TLP628-4TLP628 TLP628-2 1 16 1 4 1 8 2 2 15 2 7 3 1: Anode 3 6 3 14 ..
TLP628 ,Photocoupler GaAs Ired & Photo -TransistorTLP628,TLP628−2,TLP628−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP628,TLP628−2,TLP628 ..
TLP628-3 , 12PIN DIP 3-CHANNELS TYPE
TK4P60DB
Power MOSFET (N-ch 500V<VDSS≤700V)
TK4P60DB
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4P60DB Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 18.7 mH, RG = 25 Ω, IAR = 3.7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight : 0.36 g (typ.)
