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TK07H90ATOSHIBAN/a490avaiPower MOSFET (N-ch 700V<VDSS)


TK07H90A ,Power MOSFET (N-ch 700V<VDSS)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V ..
TK09H90A ,Power MOSFET (N-ch 700V<VDSS)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V ..
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TLP250(D4) ,Photocoupler
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TK07H90A
Power MOSFET (N-ch 700V<VDSS)
TK07H90A TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS IV)
TK07H90A

Switching Regulator Applications
z Low drain−source ON resistance : RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance : |Yfs| =5.0 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics

Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 18.4 mH, RG = 25 Ω, IAR = 7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 3.8 g (typ.)
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