TIS93 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TIS93 ,PNP General Purpose AmplifierTIS93Discrete POWER & SignalTechnologiesTIS93TO-92EBCPNP General Purpose AmplifierThis device is de ..
TIS97 ,NPN General Purpose AmplifierTIS97Discrete POWER & SignalTechnologiesTIS97TO-92EBCNPN General Purpose AmplifierThis device is de ..
TIS97 ,NPN General Purpose AmplifierTIS97Discrete POWER & SignalTechnologiesTIS97TO-92EBCNPN General Purpose AmplifierThis device is de ..
TIS97 ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TIS98 ,NPN General Purpose AmplifierTIS98Discrete POWER & SignalTechnologiesTIS98TO-92EBCNPN General Purpose AmplifierThis device is de ..
TLJW157M010R0200 , Tantalum Solid Electrolytic Chip Capacitors High CV Consumer Series
TLK10002CTR , Dual-Channel 10Gbps Multi-Rate Transceiver 144-FCBGA -40 to 85Features 2 Applications1• Dual-Channel, 10-Gbps, Multi-Rate Transceiver • Wireless Infrastructure C ..
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TLK1101ERGPR ,11.3Gb/s Cable and PC Board Equalizer 20-QFN -40 to 100SLLS845A–AUGUST 2007–REVISED OCTOBER 2007The output can be disabled using the DIS pin. The DIS and ..
TLK1101ERGPRG4 , 11.3-Gbps Cable and PC Board Equalizer
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TIS93
PNP General Purpose Amplifier
TIS93 Discrete POWER & Signal Technologies TIS93 TO-92 E B C PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO VCBO Collector-Base Voltage 40 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 800 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TIS93 P Total Device Dissipation 625 mW D Derate above 25 C 5.0 mW/ C ° ° Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC R Thermal Resistance, Junction to Ambient 200 °C/W θJA 1997
