TIS74 ,N-Channel General Purpose AmplifierTIS73/TIS74TIS73/TIS74N-Channel General Purpose Amplifier• This device is designed for low level an ..
TIS74 ,N-Channel General Purpose AmplifierTIS73/TIS74TIS73/TIS74N-Channel General Purpose Amplifier• This device is designed for low level an ..
TIS75 ,Industrial Power SuppliesTIS75TIS75N-Channel General Purpose Amplifier• This device is designed for low level analog switchi ..
TIS75 ,Industrial Power Suppliesapplications involving pulsed or low duty cycle operations.
TIS93 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TIS93 ,PNP General Purpose AmplifierTIS93Discrete POWER & SignalTechnologiesTIS93TO-92EBCPNP General Purpose AmplifierThis device is de ..
TLJW157M010R0200 , Tantalum Solid Electrolytic Chip Capacitors High CV Consumer Series
TLK10002CTR , Dual-Channel 10Gbps Multi-Rate Transceiver 144-FCBGA -40 to 85Features 2 Applications1• Dual-Channel, 10-Gbps, Multi-Rate Transceiver • Wireless Infrastructure C ..
TLK10021ZWQ , 10 Gbps PHY Transceiver for LAN/MAN/SAN Applications
TLK1101ERGPR ,11.3Gb/s Cable and PC Board Equalizer 20-QFN -40 to 100SLLS845A–AUGUST 2007–REVISED OCTOBER 2007The output can be disabled using the DIS pin. The DIS and ..
TLK1101ERGPRG4 , 11.3-Gbps Cable and PC Board Equalizer
TLK1101ERGPT ,11.3Gb/s Cable and PC Board Equalizer 20-QFN -40 to 100block diagram of the TLK1101E is shown in Figure 1. This compact, low power, 11.3-Gbps equalizercon ..
TIS74
N-Channel General Purpose Amplifier
TIS73/TIS74 TIS73/TIS74 N-Channel General Purpose Amplifier • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 54. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * T =25°C unless otherwise noted A Symbol Parameter Value Units V Drain-Gate Voltage 30 V DG V Gate-Source Voltage -30 V GS I Forward Gate Current 10 mA GF T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Gate-Source Breakdown Voltage I = 1.0μA, V = 0 -30 V (BR)GSS G DS I Gate Reverse Current V = 15V, V = 0 -2.0 nA GSS GS DS V = 15V, V = 0, T = 100°C -5.0 μA GS DS a I (off) Drain Cutoff Leakage Current V = 15V, V = -10V -2.0 nA D DS GS V = 15V, V = -10V, -5.0 μA DS GS T = 100°C a V (off) Gate-Source Cutoff Voltage V = 15V, I = 4.0nA TIS73 -4.0 -10 V GS DS D TIS74 -2.0 -6.0 V On Characteristics * Zero-Gate Voltage Drain Current * V = 15V, V = 0 TIS73 50 mA I DSS DS GS TIS74 20 100 mA r (on) Drain-Source On Resistance V ≤ 0.1V, V = 0 TIS73 25 Ω DS DS GS f = 1.0KHz TIS74 40 Ω Small Signal Characteristics C Input Capacitance V = 0, V = -10V, f = 1.0MHz 18 pF iss DS GS C Reverse Transfer Capacitance V = 0, V = -10V, f = 1.0MHz 8.0 pF rss DS GS Switching Characteristics t Rise Time V (off) = -10V, V (on) = 0, r GS GS I = 20mA, V = 10V TIS73 3.0 ns D DS TIS74 4.0 ns t Turn-On Time V = -10V, V (on) = 0, on GS(off) GS I = 20mA, V = 10V 6.0 ns D DS t Turn-Off Time V (off) = -10V, V (on) = 0, off GS GS I = 20mA, V = 10V TIS73 25 ns D DS TIS74 50 ns * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 3.0% ©2002 Rev. B, July 2002
