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TIS73
N-Channel General Purpose Amplifier
TIS73/TIS74 TIS73/TIS74 N-Channel General Purpose Amplifier • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 54. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * T =25°C unless otherwise noted A Symbol Parameter Value Units V Drain-Gate Voltage 30 V DG V Gate-Source Voltage -30 V GS I Forward Gate Current 10 mA GF T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Gate-Source Breakdown Voltage I = 1.0μA, V = 0 -30 V (BR)GSS G DS I Gate Reverse Current V = 15V, V = 0 -2.0 nA GSS GS DS V = 15V, V = 0, T = 100°C -5.0 μA GS DS a I (off) Drain Cutoff Leakage Current V = 15V, V = -10V -2.0 nA D DS GS V = 15V, V = -10V, -5.0 μA DS GS T = 100°C a V (off) Gate-Source Cutoff Voltage V = 15V, I = 4.0nA TIS73 -4.0 -10 V GS DS D TIS74 -2.0 -6.0 V On Characteristics * Zero-Gate Voltage Drain Current * V = 15V, V = 0 TIS73 50 mA I DSS DS GS TIS74 20 100 mA r (on) Drain-Source On Resistance V ≤ 0.1V, V = 0 TIS73 25 Ω DS DS GS f = 1.0KHz TIS74 40 Ω Small Signal Characteristics C Input Capacitance V = 0, V = -10V, f = 1.0MHz 18 pF iss DS GS C Reverse Transfer Capacitance V = 0, V = -10V, f = 1.0MHz 8.0 pF rss DS GS Switching Characteristics t Rise Time V (off) = -10V, V (on) = 0, r GS GS I = 20mA, V = 10V TIS73 3.0 ns D DS TIS74 4.0 ns t Turn-On Time V = -10V, V (on) = 0, on GS(off) GS I = 20mA, V = 10V 6.0 ns D DS t Turn-Off Time V (off) = -10V, V (on) = 0, off GS GS I = 20mA, V = 10V TIS73 25 ns D DS TIS74 50 ns * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 3.0% ©2002 Rev. B, July 2002
