TIP41F , POWER TRANSISTORS(6A,120-160V,65W)
TIP42A ,General Purpose Amplifier and Switching ApplicationsTIP41A/41B/41CTIP42A/42C®COMPLEMENTARY SILICON POWER TRANSISTORS■ COMPLEMENTARY PNP - NPN DEVICES D ..
TIP42A ,General Purpose Amplifier and Switching Applications
TIP42B ,General Purpose Amplifier and Switching Applications
TIP42B ,General Purpose Amplifier and Switching Applications
TIP42B ,General Purpose Amplifier and Switching Applications
TLE8263E , Universal System Basis Chip HERMES Rev. 1.0
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TLE8264E , Universal System Basis Chip HERMES Rev. 1.0
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TLE8366EV , 1.8A DC/DC Step-Down Voltage Regulator
TLE8366EV50 , 1.8A DC/DC Step-Down Voltage Regulator
TIP41CTU
NPN Epitaxial Silicon Transistor
TIP41 Series(TIP41/41A/41B/41C) TIP41 Series(TIP41/41A/41B/41C) Medium Power Linear Switching Applications Complement to TIP42/42A/42B/42C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage: TIP41 40 V CBO : TIP41A 60 V : TIP41B 80 V : TIP41C 100 V V Collector-Emitter Voltage: TIP41 40 V CEO : TIP41A 60 V : TIP41B 80 V : TIP41C 100 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 6 A C I Collector Current (Pulse) 10 A CP I Base Current 2 A B P Collector Dissipation (T =25°C) 65 W C C P Collector Dissipation (T =25°C) 2 W C a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : TIP41 I = 30mA, I = 0 40 V C B : TIP41A 60 V : TIP41B 80 V : TIP41C 100 V I Collector Cut-off Current CEO : TIP41/41A V = 30V, I 0 0.7 mA CE B = : TIP41B/41C V = 60V, I = 0 0.7 mA CE B I Collector Cut-off Current CES : TIP41 V = 40V, V = 0 400 μA CE EB : TIP41A V = 60V, V = 0 400 μA CE EB : TIP41B V = 80V, V = 0 400 μA CE EB : TIP41C V = 100V, V = 0 400 μA CE EB I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO EB C h * DC Current Gain V = 4V,I = 0.3A 30 FE CE C 75 V = 4V, I = 3A 15 CE C V (sat) * Collector-Emitter Saturation Voltage I = 6A, I = 600mA 1.5 V CE C B V (sat) * Base-Emitter Saturation Voltage V = 4V, I = 6A 2.0 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 500mA 3.0 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2000 Fairchild Semiconductor International Rev. A, February 2000
