TIP30CTU ,PNP Epitaxial Silicon TransistorApplications Complementary to TIP29/29A/29B/29CTO-22011.Base 2.Collector 3.EmitterPNP Epitax ..
TIP31A ,General Purpose Amplifier and Switching ApplicationsTIP31A/31CTIP32A/32B/32C®COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION ..
TIP31AG , Complementary Silicon Plastic Power Transistors
TIP31B ,General Purpose Amplifier and Switching Applications
TIP31B ,General Purpose Amplifier and Switching Applications
TIP31B. ,General Purpose Amplifier and Switching Applications
TLE7236G , 8 Channel High-Side and Low-Side Relay Switch with Limp Home Mode and Cranking
TLE7236G , 8 Channel High-Side and Low-Side Relay Switch with Limp Home Mode and Cranking
TLE7237GS , 8 Channel High-Side and Low-Side Relay Switch
TLE7237GS , 8 Channel High-Side and Low-Side Relay Switch
TLE7237SL , SPI Driver for Enhanced Relay Control
TLE7237SL , SPI Driver for Enhanced Relay Control
TIP30CTU
PNP Epitaxial Silicon Transistor
TIP30 Series(TIP30/30A/30B/30C) TIP30 Series(TIP30/30A/30B/30C) Medium Power Linear Switching Applications Complementary to TIP29/29A/29B/29C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : TIP30 - 40 V CBO : TIP30A - 60 V : TIP30B - 80 V : TIP30C - 100 V V Collector-Emitter Voltage : TIP30 - 40 V CEO : TIP30A - 60 V : TIP30B - 80 V : TIP30C - 100 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 1 A C I Collector Current (Pulse) - 3 A CP I Base Current - 0.4 A B P Collector Dissipation (T =25°C) 30 W C C P Collector Dissipation (T =25°C) 2 W C a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : TIP30 I = -30mA, I = 0 -40 V C B : TIP30A -60 V : TIP30B -80 V : TIP30C -100 V I Collector Cut-off Current CEO : TIP30/30A V = -30V, I = 0 -0.3 mA CE B : TIP30B/30C V = -60V, I = 0 -0.3 mA CE B I Collector Cut-off Current CES : TIP30 V = -40V, V = 0 -200 μA CE EB : TIP30A V = -60V, V = 0 -200 μA CE EB : TIP30B V = -80V, V = 0 -200 μA CE EB : TIP30C V = -100V, V = 0 -200 μA CE EB I Emitter Cut-off Current V = -5V, I = 0 -1.0 mA EBO EB C h * DC Current Gain V = -4V,I = -0.2A 40 FE CE C V = -4V, I = -1A 15 75 CE C V (sat) * Collector-Emitter Saturation Voltage I = -1A, I = -125mA -0.7 V CE C B V (sat) * Base-Emitter Saturation Voltage V = -4V, I = -1A -1.3 V BE CE C f Current Gain Bandwidth Product V = -10V, I = -200mA 3.0 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2000 Fairchild Semiconductor International Rev. A, February 2000
