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TIP113N/a188avaiPlastic medium-power complementary silicon transistor


TIP113 ,Plastic medium-power complementary silicon transistorMAXIMUM RATINGS*Motorola Preferred DeviceÎÎÎÎÎTIP110, TIP111, TIP112,TIP115 TIP116 TIP117Rating Sym ..
TIP115 ,PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORSTIP110/112TIP115/117®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERR ..
TIP115TU ,PNP Epitaxial Silicon Darlington TransistorTIP115/116/117TIP115/116/117Monolithic Construction With Built In Base-Emitter Shunt Resistors • Hi ..
TIP116 ,PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORSOrder this document**by TIP110/DSEMICONDUCTOR TECHNICAL DATA !** *"*#**!**$ * * !** *. . . designe ..
TIP117 ,PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORSTIP110/112TIP115/117®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERR ..
TIP117. ,PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORSAPPLICATIONS 32■ LINEAR AND SWITCHING INDUSTRIAL ..
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TLE6215G ,Vehicle Stability ICsGeneral descriptionDouble channel Low-Side-Switch in Smart Power Technology (SPT) withtwo seperate ..


TIP113
Plastic medium-power complementary silicon transistor
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!$ - ! .. designed for general–purpose amplifier and low–speed switching applications. High DC Current Gain —
hFE = 2500 (Typ) @ IC = 1.0 Adc Collector–Emitter Sustaining Voltage — @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) — TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) — TIP112, TIP117 Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc Monolithic Construction with Built–in Base–Emitter Shunt Resistors TO–220AB Compact Package
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Figure 1. Power Derating

T, TEMPERATURE (°C)
, POWER DISSIP
TION (W
TTS)
*Motorola Preferred Device
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