TIP111TU ,NPN Epitaxial Silicon Darlington TransistorTIP110/111/112TIP110/111/112Monolithic Construction With Built In Base-Emitter Shunt Resistors• Com ..
TIP112 ,PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORSTHERMAL CHARACTERISTICSÎÎÎÎCASE 221A–06Characteristics Symbol Max UnitTO–220ABÎÎÎÎThermal Resistanc ..
TIP112. ,PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORSTHERMAL CHARACTERISTICSÎÎÎÎCASE 221A–06Characteristics Symbol Max UnitTO–220ABÎÎÎÎThermal Resistanc ..
TIP112G , Plastic Medium-Power Complementary Silicon Transistors
TIP113 ,Plastic medium-power complementary silicon transistorMAXIMUM RATINGS*Motorola Preferred DeviceÎÎÎÎÎTIP110, TIP111, TIP112,TIP115 TIP116 TIP117Rating Sym ..
TIP115 ,PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORSTIP110/112TIP115/117®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERR ..
TLE6208-3G ,Smart Motorbridges + Driver ICsFunctional DescriptionThe TLE 6208-3 G is a fully protected Triple-Half-Bridge-Driver designed spec ..
TLE6208-6G ,Smart Motorbridges + Driver ICsapplications. The part is based on Infineons®Smart Power Technology SPT which allows bipolar and CM ..
TLE6208-6G ,Smart Motorbridges + Driver ICsapplications• 0.6 A continuous (1 A peak) current per switch P-DSO-28-6• R ; typ. 0.8 Ω , @ 25 °C p ..
TLE6208-6G ,Smart Motorbridges + Driver ICsfeatures like Over- and Undervoltage-Lockout, Over-Temperature-Protection and the very low quiescen ..
TLE6209R ,Smart Motorbridges + Driver ICsFunctional DescriptionThe TLE 6209 R is an integrated power H-Bridge with D-MOS output stages for d ..
TLE6210G ,Vehicle Stability ICsFunctional DescriptionThe TLE 6210 and TLE 6211 are integrated circuit consisting of a 5 V voltage ..
TIP111TU
NPN Epitaxial Silicon Darlington Transistor
TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In Base- Emitter Shunt Resistors • Complementary to TIP115/116/117 • High DC Current Gain : h =1000 @ V =4V, I =1A(Min.) FE CE C • Low Collector-Emitter Saturation Voltage • Industrial Use TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage : TIP110 60 V CBO : TIP111 80 V : TIP112 100 V B Collector-Emitter Voltage : TIP110 60 V V : TIP111 80 V CEO : TIP112 100 V V Emitter-Base Voltage 5 V EBO R1 R2 I Collector Current (DC) 2 A C I Collector Current (Pulse) 4 A E CP R11 ≅ 0kΩ R20 ≅ .6kΩ I Base Current (DC) 50 mA B P Collector Dissipation (T =25°C) 2 W C a Collector Dissipation (T =25°C) 50 W C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : TIP110 I = 30mA, I = 0 60 V C B : TIP111 80 V : TIP112 100 V I Collector Cut-off Current CEO : TIP110 V = 30V, I = 0 2 mA CE B : TIP111 V = 40V, I = 0 2 mA CE B : TIP112 V = 50V, I = 0 2 mA CE B I Collector Cut-off Current CBO : TIP110 V = 60V, I = 0 1 mA CB E : TIP111 V = 80V, I = 0 1 mA CB E : TIP112 V = 100V, I = 0 1 mA CB E I Emitter Cut-off Current V = 5V, I = 0 2 mA EBO BE C h DC Current Gain V = 4V, I = 1A 1000 FE CE C V = 4V, I = 2A 500 CE C V (sat) Collector-Emitter Saturation Voltage I = 2A, I = 8mA 2.5 V CE C B V (on) Base-Emitter ON Voltage V = 4V, I = 2A 2.8 V BE CE C C Output Capacitance V = 10V, I = 0, f = 0.1MHz 100 pF ob CB E ©2001 Rev. A1, June 2001
