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THD215HI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
THD215HIHIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE# E81734 (N)).
APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR AND MONITORS
DESCRIPTIONThis deviceis manufactured using Multiepitaxial
Mesa technology for cost-effective high
performance and usesa Hollow Emitter structure enhance switching speeds.
The THD seriesis designedfor usein horizontal
deflection circuitsin televisions and monitors.
INTERNAL SCHEMATIC DIAGRAMDecember 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value UnitVCBO Collector-Base Voltage(IE=0) 1500 V
VCEO Collector-Emitter Voltage(IB=0) 700 V
VEBO Emitter-Base Voltage(IC =0) 10 V Collector Current 10 A
ICM Collector Peak Current(tp <5 ms) 20 A Base Current 5 A
IBM Base Peak Current(tp <5 ms) 10 A
Ptot Total DissipationatTc =25o C57 W
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
ISOWATT2181/6
THERMAL DATARthj-case Thermal Resistance Junction-case Max 2.2 o C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. UnitICEO Collector Cut-off
Current(IB =0)
VCE =700V 10 μA
ICES Collector Cut-off
Current (VBE =0)
VCE =1500V 10 μA
IEBO Emitter Cut-off Current
(IC =0)
VEB =5V 100 μA
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB =0)= 100 mA 700 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =6A IB= 1.2A 1.3 V
VBE(sat)∗ Base-Emitter
Saturation Voltage =6A IB= 1.2A 1.3 V
hFE∗ DC Current Gain IC =10 mA VCE =5V =6A VCE =5V =6A VCE =5V Tj= 125oC
INDUCTIVE LOAD
Storage Time
Fall Time =4.5A f =64 KHz
IB1 =1.5A IB2 =-2.4A
Vceflyback= 1100 sin106
∗ Pulsed: Pulse duration=300μs, duty cycle1.5%
Safe Operating Area Thermal Impedance
THD215HI2/6
Derating Curve
Collector Emitter Saturation Voltage
Power Lossesat64 KHz Current Gain
Base Emitter Saturation Voltage
Switching Time Inductive Loadat64 KHz
THD215HI3/6
Reverse Biased SOA
THD215HI4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 5.35 5.65 0.211 0.222 3.30 3.80 0.130 0.150 2.90 3.10 0.114 0.122 1.88 2.08 0.074 0.082 0.75 0.95 0.030 0.037 1.05 1.25 0.041 0.049 1.50 1.70 0.059 0.067 1.90 2.10 0.075 0.083 10.80 11.20 0.425 0.441 15.80 16.20 0.622 0.638 9 0.354 20.80 21.20 0.819 0.835 19.10 19.90 0.752 0.783 22.80 23.60 0.898 0.929 40.50 42.50 1.594 1.673 4.85 5.25 0.191 0.207 20.25 20.75 0.797 0.817 2.1 2.3 0.083 0.091 4.6 0.181
DIA 3.5 3.7 0.138 0.146
P025C/A
ISOWATT218 MECHANICAL DATA Weight: 4.9g (typ.) Maximum Torque (appliedto mountingflange) Recommended: 0.8 Nm; Maximum:1 Nm Thesideofthe dissipator mustbeflat within80 μm
THD215HI5/6
Information furnishedis believedto beaccurate andreliable. However, STMicroelectronics assumes noresponsibilityforthe consequencesuseof such informationnorfor any infringementof patentsor other rightsof third parties which may result fromits use.No licenseis
grantedby implicationor otherwise underany patentor patentrightsof STMicroelectronics. Specification mentioned inthis publicationare
subject tochange without notice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are notauthorizedfor useas critical componentsinlife support devices orsystems without express written approvalof STMicroelectronics.
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1999 STMicroelectronics– Printedin Italy– AllRights Reserved
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THD215HI6/6
