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TH58NVG1S3AFT05TOSHIBAN/a5704avaiTOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS


TH58NVG1S3AFT05 ,TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOSFEATURESx Powersupply V 2.7 V to 3.6 V CCOrganizationProgram/Erase Cycles 1E5 Cy ..
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TLC274CDR ,Quad Single Supply Operational Amplifier           SLOS092D − SEP ..
TLC274CDRG4 ,Quad Single Supply Operational Amplifier 14-SOIC 0 to 70           SLOS092D − SEP ..
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TLC274CPWR ,Quad Single Supply Operational Amplifier           SLOS092D − SEP ..


TH58NVG1S3AFT05
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2GBIT (256M u 8BITS) CMOS NAND E2 PROM
DESCRIPTION

The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages). The TH58NVG1S3A is a serial-type memory device which utilizes the I/O pins for both address and data input / output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non- volatile memory data storage.
FEATURES
Organization Memory cell allay 2112 u 64K u 8 u 2 Register 2112 u 8 Page size 2112bytes Block size (128K  4K) bytes Modes Read㧘Reset㧘Auto Page Program Auto Block Erase㧘Status Read Mode control Serial input㧛outputCommand control
PIN ASSIGNMENT (TOP VIEW) PIN NAMES
Powersupply VCC 2.7 V to 3.6 V Program/Erase Cycles 1E5 Cycles(With ECC) Access time Cell array to register 25 Psmax Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ. Standby 50 PA max Package TSOP I 48-P-1220-0.50(Weight : 0.53 g typ.)
000707EBA1
I/O8
I/O7
I/O6
I/O5
VCC
VSS
I/O4
I/O3
I/O2
I/O1
GND
VCC
VSS
CLE
ALE/RY
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