TG2200AF ,RF Cell PacksFEATURES0 LOW INSERTION LOSS : Loss=0.5dB (Typ.)0 HIGH ISOLATION : |SL=25dB (Typ.). CUNIRUL VULIAGI ..
TG2204F ,1.9GHz BAND ANTENNA SWITCH (PHS DIGITAL CORDLESS TELEPHONE)FEATURESo LOWINSERTION LOSS : Loss=0.5dB(Typ.)O HIGHTISOLATION : |SL=25dB(Typ.)O (ONTROI \IOITAGF . ..
TG2205F ,RF SPDT Switch (Application: PHS)Electrical Characteristics (V = 3 V, f = 1.907 GHz, Ta = 25°C, Z = Z = 50 Ω)DD g ITest Characteris ..
TG2210FT ,GaAs Linear Integrated Circuit GaAs Monolithic RF SPDT SwitchElectrical Characteristics (f 1 GHz, Ta 25°C, Zg Zl 50 )Test Characteri ..
TG2211FT ,RF SPDT SwitchElectrical Characteristics (V 2.7 V, V 2.7 V, V 0 V, Ta 25°C, Zg Zl ..
TG2216TU ,RF SPDT SwitchElectrical Characteristics (V 2.7 V, V 0 V, Ta 25°C, Zg Zl 50 )CON ..
TLC2201AID ,Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier
TLC2201AIDRG4 , Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
TLC2201AM ,Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-PDIP -55 to 125
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TLC2201BIP ,Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
TLC2201CD ,Low Noise Precision Rail-To-Rail Output Operational Amplifier
TG2200AF
RF Cell Packs
TOSHIBA TG2200AF
TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC
TG2200AF
1.9GHz BAND ANTENNA SWITCH
(PHS DIGITAL CORDLESS TELEPHONE)
FEATURES
0 LOW INSERTION LOSS : Loss=0.5dB (Typ.)
o HIGH ISOLATION : ISL=25dB (Typ.)
O CONTROL VOLTAGE : OV/3V
PIN CONNECTION (TOP VIEW) MARKING
RF1 (RX) GND RFcom (ANT) Type name
Fl Fl HHIEI
/ LotNo.
2200A Z"
'" SSOP8-P-0.65
0 El Weight : 0.02g (Typ.)
HHHIZI
ch RF2 (TX) GND
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Supply Voltage VDD s V
Control Voltage VC1 5 V
VC2 5 V
Input Power Pi 1 W
Operating Temperature Range Topr -40--85 ''C
Storage Temperature Range Tstg -55--125 ''C
961001EBC1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also. please keep in mind the precautions
and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OGallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are
toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products,
follgw the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic
gar age.
OThe products described in this document are subject to foreign exchange and foreign trade control laws.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
TOSHIBA TG2200AF
ELECTRICAL CHARACTERISTICS (VDD = 3V, Ta = 25°C, 29 = 2| = son)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP. MAX. UNIT
Frequency Range frange - - 1895 - 1918 MHz
V =3V, V =0V,
Lossu) 1 PfjndBmVS/Z - 0.5 1.0 dB
Insertion Loss
VCI = 0V, VC2 = 3V,
LOSS (2) 1 Pi =0dBmW - 0.5 1.0 dB
ISL (1) 1 :9 2:2:\é'm\<,$2 = ov, 20 25 - dB
Isolation I-
VCI = 0V, VC2 = 3V,
ISLQ) 1 Pi = =0dBmW 20 25 - dB
Switching Time tsw - 0.01 - pt;
Supply Current IDD Zr“ =3V, VC2 =0V - - 0.1 mA
10 - - - 0.1 mA
V = V, V = V
Control Current lt:2 CI 0 C2 3 - - 0.1 mA
Output Power at 1dB - - dBm
Gain Compression PoldB 1 VC1 =3V, VC2 =0V 24 W
Adjacent Channel . Vc1 =3V, VC2 =0V,
Leakage Power Ratio Pad] 1 Pi =22dBmW (Note), nf=600kHz - - -60 dB
(Note) Input signal
TRUTH TABLE
is modulated to 7r/4QPSK(a=0.5). Bit rate is 384kbps.
CONTROL VOLTAGE SWITCH CONDITION
VC1 VC2 RFcom (ANT)-RF1(RX) RFcom (ANT)-RF2 (TX)
3V 0V OFF ON
0V 3V ON OFF
TOSHIBA TG2200AF
EQUIVALENT CIRCUIT
© RFcom (ANT)
0 © VDD
C) C 0 © RF2(TX)
RF1 (RX)
© Ci) ©
GND Vc1 ch GND
TEST CIRCUIT 1
RFcom (ANT) Cy-, © © I-r"-:, VDD
ITi © © [j
RF1 (RX) o-o-T © © I-o-o RF2 (TX)
Va 0—1—[ (I) I-re-o Va
J Cl : DC BLOCK J
C2 : 9pF
RF TEST CONDITION (VDD = 3V, f=1.907GHz, Ta = 25°C, 29 = 2| = 500)
RFcom(ANT) RF1 (RX) RF2 (TX) INPUT POWER VCI ch
LOSS (1) Po TERMINATION Pi 22dBmW 3V OV
L P; P son OdBmW OV 3V
OSS(2) I o TERMINATION
ISL (1) TERMINATION Po Pi 22dBmW 3V OV
ISL (2) Pi TERMINATION Po OdBmW OV 3V
PoldB Po TERMINATION Pi - 3V 0V
Padj P 500 P; 22dBmW 3V OV
o TERMINATION I
CAUTION
This device is electrostatic sensitivity. Please handle with caution.
TOSHIBA
ADJACENT CHANNEL LEAKAGE POWER RATIO
Padj(1), Padj(Z) (dB)
INSERTION LOSS L055 (1)
INSERTION LOSS Lossm
Lossu). |SL(1) - Pi
LOSS (1)
VDD=3V
VC1=3V
f= 1.907GHZ
15 20 25 30
INPUT POWER Pi (dBmW)
Padj(1), Padj (2) - Pi
VDD = 3V
Vc1 = 3V
ch = 0V
f= 1 .907GHZ
7r/4QPSK MODULATED WAVE
Padj (1) = 600kHz ADJACENT
Padj (2) = 900kHz ADJACENT
Padj (1)
--'Tsl.re
s.----)--)-
Padj (2)
15 20 25 30
INPUT POWER Pi (dBmW)
LOSS(2), |SL(2) - VDD, Vc2
Loss (2)
Va =0V
Pi = OdBmW
f= 1.907GHZ
ar/4QPSK
MODULATED
4.0 3.0 2.0 1.0 0.0
VDD, ch (V)
ISL (1) (d8)
ISOLATION
INSERTLON L055 L055 (2)
INSERTION L055 L055 (1)
|SL(2) (dB)
Padj(1),Padj(2) (dB)
ISOLATION
ADJACENT CHANNEL LEAKAGE POWER RATIO
TG2200AF
Lossu). |SL(2) - Pi
Loss (2)
VDD=3V
VC1=0V
f=1.907GHz
20 25 30
INPUT POWER Pi (dBmW)
Lossu). ISL(1) - VDD, VCI
Loss (1)
Pi =22dBmW
f=1.907GHz
7r/4QPSK
MODULATED
4.0 3.0 2.0 1.0 0.0
VDD, VCI (V)
Padj(1), Padj (2) - VDD, VCI
ch =0V
P,:22dBmw
f=1.907GHz
7r/4QPSK
MODULATED
Padj (1)=600kHz
ADJACENT
Padj (1)
Padj (2) = 900kHz
ADJACENT
Padj (2)
4.0 3.0 2.0 1.0 0.0
VDD, VCI (V)
|SL(2) (dB)
ISOLATION
ISOLATION
TOSHIBA
INSERTION LOSS L055 (1)
INSERTION LOSS L055 (2)
Lossu) - f
VDD = 3V
Vc1=3V
Vc2=0V
Pi =0dBmW
1000 2000 3000
FREQUENCY f (MHz)
Loss (2) - f
1000 2000 3000
FREQUENCY f (MHz)
|SL(1) (dB)
ISOLATION
|SL(2) (dB)
ISOLATION
TG2200AF
ISL(1) - f
VDD=3V
Vc1=3V
Pi=0dBmW
1000 2000 3000
FREQUENCY f (MHz)
ISL(2) - f
VDD=3V
Vc1=0V
Pi=0dBmW
1000 2000 3000
FREQUENCY f (MHz)
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