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TC7W53FTOSN/a65avai2-CHANNEL MULTIPLEXER/DEMULTIPLEXER
TC7W53FN/a1156avai2-CHANNEL MULTIPLEXER/DEMULTIPLEXER
TC7W53FTOSHIBAN/a3000avai2-CHANNEL MULTIPLEXER/DEMULTIPLEXER
TC7W53FKTOSHIBAN/a3000avai2-CHANNEL MULTIPLEXER/DEMULTIPLEXER
TC7W53FKTOSN/a3000avai2-CHANNEL MULTIPLEXER/DEMULTIPLEXER
TC7W53FUTOSN/a9607avai2-CHANNEL MULTIPLEXER/DEMULTIPLEXER


TC7W53FU ,2-CHANNEL MULTIPLEXER/DEMULTIPLEXERTC7W53F/FU/FKv,logical amplitude/I/cc-GN?) control signal. TC7W53FUJVI u-I -t.E.rFor example, in th ..
TC7W66 ,DUAL BILATERAL SWITCHTC7W66F/FU/FKT(‘7WEEF T(‘7W66Fll T(‘7W66FKI-vvl-vv- v,vv-I‘The TC7W66 is a high speed CMOS DUAL BIL ..
TC7W66 ,DUAL BILATERAL SWITCHFEATURESHigh Speed B..... tpd=7ns (Typ.) at VCC=5VLow Power Dissipation lcc=1PA(Max.) at Ta =25°CH ..
TC7W66F ,DUAL BILATERAL SWITCHFEATURESHigh Speed B..... tpd=7ns (Typ.) at VCC=5VLow Power Dissipation lcc=1PA(Max.) at Ta =25°CH ..
TC7W66FK ,DUAL BILATERAL SWITCHFEATURESHigh Speed B..... tpd=7ns (Typ.) at VCC=5VLow Power Dissipation lcc=1PA(Max.) at Ta =25°CH ..
TC7W66FU ,DUAL BILATERAL SWITCHTC7W66F/FU/FKT(‘7WEEF T(‘7W66Fll T(‘7W66FKI-vvl-vv- v,vv-I‘The TC7W66 is a high speed CMOS DUAL BIL ..
TDA4862 ,Power Control ICsFeatures• IC for sinusoidal line-current consumption  Power factor approaching 1 Controls boost c ..
TDA4862 . ,Power Control ICs Power-Factor Controller (PFC) TDA 4862IC for High Power Factorand Active Harmonic FilterAdvanced ..
TDA4862G ,Power factor controllerFeatures• IC for sinusoidal line-current consumption  Power factor approaching 1 Controls boost c ..
TDA4862G .. ,Power factor controllerFeatures• IC for sinusoidal line-current consumption  Power factor approaching 1 Controls boost c ..
TDA4862G ... ,Power factor controllerFeatures• IC for sinusoidal line-current consumption  Power factor approaching 1 Controls boost c ..
TDA4863 ,Vertical deflection boosterTable of Contents Page1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


TC7W53F-TC7W53FK-TC7W53FU
2-CHANNEL MULTIPLEXER/DEMULTIPLEXER
TOSHIBA
TC7W53FK : UNDER DEVELOPMENT
TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TC7W53F, TC7W53FU, TC7W53FK
2-CHANNEL MULTIPLEXER / DEMULTIPLEXER
The TC7W53 is a high speed CMOS ANALOG
MULTIPLEXERIDEMULTIPLEXER fabricated with silicon
gate CMOS technology.
They achieve the high speed operation similar to
equivalent LSTTL while maintaining the CMOS low power
dissipation.
The TC7W53 has a 2 channel configuration.
The digital signal to the control terminal turns "ON" the
corresponding switch of each channel a large amplitude
signal (Vcc-i/EE) can then be switched by the small
logical amplitude (VCC-GND) control signal.
For example, in the case of Vcc=5V, GND=0V, VEE =5V,
signals between -5V and +5V can be switched from the
logical circuit with a single power supply of 5V. As the
ON-resistance of each switch is low, they can be
connected to circuit with low input impedance.
All inputs are equipped with protection circuits against
static discharge or transient excess voltage.
FEATURES
0 High Speed B....................... tpd=15ns(Typ.)
at Vcc=5V, VEE =0V
0 Low Power Dissipation ......... lcc=4PA (Max.) at Ta =25°C
0 High Noise Immunity ............ 1/NIH=VNIL=28% VCC (Min.)
0 Low ON Resistance ............... RQN=500(Typ.)
at VCC'VEE =9V
0 High Degree of Linearity ......... THD=0.02(Typ.)
at VCC'VEE =9V
0 Pin and Function Compatible with TC4W53
MARKING
FM8 Type Name SM8 U58
El El El 'r" [ Type Name n n n n
7 w 5 3 F = 7W53 'COT-',),
LotNo. /— 7W
A 'N 5 3
o D D/ 0 LIE] lu Ll U
ti ti trl ti
TC7W53F/FU/FK
TC7W53F
SOP8-P-1.27
TC7W53FU
SSOP8-P-O.65
TC7W53FK
SSOP8-P-0.50A
Weig ht
SOP8-P-1.27 : 0.05g (Typ.)
SSOP8-P-O.65 : 0.02g (Typ.)
SSOP8-P-0.50A : 0.01g (Typ.)
2001 -05-31
TOSHIBA
MAXIMUM RATINGS (Ta = 25°C)
x : Don't care
LOGIC SYMBOL
CHARACTERISTIC SYMBOL RATING UNIT
VCC -0.5--7
Supply Voltage Range VCC~VEE -0.5--13 V
Control Input Voltage VIN -0.r-Vcc+0.5 V
Switch I/O Voltage VI/O VEE -0.5--Vcc+0.5 V
Control Input Diode Current ICK :20 mA
I/O Diode Current 'IOK 120 mA
Switch Through Current IT :25 mA
DC Vcc/GND Current ICC $25 mA
Power Dissipation PD 300 (FM8, SM8) mW
200(US8)
Storage Temperature Tstg -65-150 "C
Lead Temperature (10 s) TL 260 "C
TRUTH TABLE
CONTROL INPUT ON CHANNEL
L L ch 0
L H ch 1
H x NONE
TC7W53F/FU/FK
PIN ASSIGNMENT (TOP VIEW)
(2) VCC ch 0 h 1 A
INH MUXDMUX I IE]
III III
COMMON INH VEE GND
LOGIC DIAGRAM
A -(Dr-
LOGIC LEVEL OUT IN 0
CONVERTER
INH -l>r- OUT IN 1
2001 -05-31
TOSHIBA TC7W53F/FU/FK
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC SYMBOL RATING UNIT
VCC 2--6 V
Supply Voltage VEE - ir-o V
VCC~VEE 2--12 V
Control Input Voltage VIN tr-Vcc V
Switch I/O Voltage VI/O 0~VCC V
Operating Temperature Topr - 40--85 "C
0--1000 (VCC = 2.0V)
Input Rise and FallTime tr, tf 0~500 (Vcc=4.5V) ns
0--400 (uct; = 6.0V)
DC ELECTRICAL CHARACTERISTICS
Ta = 25°C Ta = -40--85oc
CHARACTERISTIC SYMBOL li/si) '$f MIN. TYP. MAX. MIN. MAX. UNIT
Hi h Le el C ntr I 2.0 1.5 - - 1.5 -
In'gut (r,uil', o VIHC 4.5 3.15 - - 3.15 - v
6.0 4.2 - - 4.2 -
Low-Level Control 2.0 - - 0.5 - 0.5
VILC 4.5 - - 1.35 - 1.35 V
Input Voltage
6.0 - - 1.8 - 1.8
V|N=V|HC GND 4.5 - 85 180 - 225
VI/O=VCC to GND -4.5 4.5 - 55 120 - 150
Vl/O:2mA -6.0 6.0 - 50 100 - 125
ON Resistance RON V =V GND 2.0 - 150 - - - Q
V:|:lo=|\l/-':c or GND GND 4.5 - 70 150 - 190
1h/Os2mA -4.5 4.5 - 50 100 - 125
-6.0 6.0 45 80 - 100
Difference of V|N=VIHC GND 4.5 - 10 30 - 35
ON Resistance ARON VI/O=VCC to GND -4.5 4.5 - 5 12 - 15 n
Between Switches VI/OEZmA -6.0 6.0 - 5 10 - 12
Input/Output VOS=GND GND 6.0 - - 160 - 1600
Leakage Current IOFF V|5=GND to VCC nA
(SWITCH OFF) VIN --VILC or VIHC -6.0 6.0 i 100 - $1000
Switch Input
Leakage Current I V05=Vcc or GND GND 6.0 - - Lr60 - A600 nA
(SWITCH ON IZ VIN=VILC or VIHC -6.0 6.0 , 100 - i 1000
OUTPUT OPEN)
232:2: Input IIN V|N=VCC or GND GND 6.0 - - 10.1 - 11.0 pA
te:,","" Supply ICC VIN=VCC or GND 'fe, (e - - 2 - :3 PA
3 2001-05-31
TOSHIBA TC7W53F/FU/FK
AC ELECTRICAL CHARACTERISTICS (CL = 50pF, Input tr =tf = 6ns, GND = 0V)
Ta = 25°C Ta = - 40--85oc
CHARACTERISTIC TEST CONDITION V V
(5 'df MIN. TYP. MAX. MIN. MAX. UNIT
. GND 2.0 - 25 60 - 75
:hfse Diftl‘erentce d I/O GND 4.5 - 6 12 - 15 ns
etween npu an , GND 6.0 - 5 IO - 13
Output
-4.5 4.5 - 4 - - -
GND 2.0 - 50 225 - 280
t GND 4.5 - 14 45 - 56
Qutput Enable pZL RL=1kQ ns
Time tp2H GND 6.0 - 12 38 - 48
-4.5 4.5 - 14 - - -
GND 2.0 - 95 225 - 280
t GND 4.5 - 30 45 - 56
. . pLZ -
Output Disable Time tpHZ RL--lkn GND 6.0 - 26 38 - 48 ns
-4.5 4.5 - 26 - - -
Control Input
Capacitance CIN - - - 5 10 - 10 pF
Common Terminal
- . . - 1 2 - 2 F
Capacitance Qs 5.0 5.0 1 0 0 p
Switch Terminal
-o. 5.0 - 7 15 - 15 F
Capacitance cos 5 0 p
Feed Through
Capacitance Clog -5.0 5.0 - 0.75 2 - 2 pF
Power Dissipation CPD (Note 1) GND 5.0 - 67 - - - pF
Capacitance
(Note 1) : CPD is defined as the value of the internal equivalent capacitance which is
calculated from the operating current consumption without load.
Average operating current can be obtained by the equation :
ICC (opr) = CPD . Vcc . fIN + lcc/2
4 2001-05-31
TOSHIBA TC7W53F/FU/FK
ANALOG SWITCH CHARACTERISTICS (GND = 0V, Ta = 25°C)
CHARACTERISTIC TEST CONDITION YE li/ff: TYP. UNIT
. = . - - . 2.2 . 2
Slpe Wave RL=10kQ. CL= 50PF VIN cf 0Vp p 2 25 5 0 0 5 o
Distortion VIN --8.0Vp-p -4.5 4.5 0.02 hl
. . IN =1.1Vp-p -6.0 6.0 0.018
*1 120
Adjust fIN voltage to obtain OdBm *2 -2.25 2.25 95
Frequency at vos Increase fIN until dB Meter *1 190
Response fMAX reads -3dB *2 -4.5 4.5 150 MHz
(Switch ON) RL=500, CL=10pF *1 200
f =1MHz, Sine Wave -6.0 6.0
IN *2 190
Vin is centered at V -V /2
Feedthrough . . ( CC EE) -2.25 2.25 -50
. Adjust input for OdBm
Attenuation R --600n C =50 F -4.5 4.5 -50 dB
(Switch OFF) L= ' L= p -6.0 6.0 -50
hN=1MHz, Sine Wave
Crosstalk -2.25 2.25 60
R =6000, C =50 F
(Control Input to fl‘ =1MHz SL uarepWave (t =t =6ns) -4.5 4.5 140 mV
Signal Output) IN= ' q r- f= -6.0 6.0 200
Crosstalk Adjust VIN to obtain OdBm at Input -2.25 2.25 -50
(Between any RL=6000, CL=50pF -4.5 4.5 -50 dB
switches) le =1MHz, Sine Wave -6.0 6.0 -50
*1 : Input COMMON Terminal, and measured at SWITCH Terminal.
*2 : Input SWITCH Terminal, and measured at COMMON Terminal.
(Note): These characteristics are determined by design of device.
5 2001-05-31
TOSHIBA TC7W53F/FU/FK
SWITCHING CHARACTERISTICS TEST CIRCUITS
l. tpLz, tsz, thL, thH
t 6ns 6ns
90% VCC
I-o"- Vc >tp 10% I GND
_ " I thH tsz
HO O/l lkQ
SI Kc l>'l l>é) [51 =Vcc D
m S2 =GND
GND - VOL
m I thL tpLZ
(s1 =GND 50%
S2 =VCC lileh
2. CROSS TALK (CONTROL INPUT-SWITCH OUTPUT)
fin =1MHz, duty=50%, tr=tf=6ns
-/jtsruio
3. FEEDTHROUGH ATTENUATION
- O-jlltF 1/0 AO/l
Gl lcjteCT"''iio
VINDU l
6 2001-05-31
TOSHIBA TC7W53F/FU/FK
4. Clos, CI/O
r ------------- HF ------------- 1
l Vcc l
l Vcc l
', IIO . on l
Cos+ +CI/O
l GND l
ab m Ab
5. CROSS TALK (BETWEEN ANY TWO SWITCHES)
-0y'' 6030 NO \on .
6. FREQUENCY RESPONSE (SWITCH ON)
- 0-1/1F IIO on
GND I l
7 2001-05-31
TOSHIBA TC7W53F/FU/FK
PACKAGE DIMENSIONS
SOP8-P-1.27 Unit : mm
1.27 1.27 1.27
Weight : 0.05g (Typ.)
8 2001-05-31
TOSHIBA TC7W53F/FU/FK
PACKAGE DIMENSIONS
SSOP8-P-0.65 Unit : mm
Lf9 ".5!
e? fr"?
S, cu.
a? O ‘t
". A LO
T- dk l
Weight : 0.02g (Typ.)
9 2001-05-31
TOSHIBA TC7W53F/FU/FK
PACKAGE DIMENSIONS
SSOP8-P-0.50A Unit : mm
"2 fi"?
S, cu.
o' C) w
an H 9-.
tt ‘31
CD" " -
Weight : 0.01g (Typ.)
10 2001-05-31
TOSHIBA TC7W53F/FU/FK
RESTRICTIONS ON PRODUCT USE
000707EBA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 The products described in this document are subject to the foreign exchange and foreign trade
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
11 2001-05-31
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