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TC75W51FK-TC75W51FU
DUAL OPERATIONAL AMPLIFIER
TOSHIBA TC75W51FU/FK
TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC
TC75W51] FU, TC75W51] FK
DUAL OPERATIONAL AMPLIFIER
TC75W51 is a CMOS operational amplifier with low TC75W51FU
supply voltage, low supply current.
FEATURES
0 Low supply voltage : VDD-- i0.75~ 13.5V or 1.5--7V
0 Low supply current : IDD NDD--3V)--120PA (Typ.)
o The internally phase compensated operational amplifier. SSOP8-P-0.65
TC75W51FK
0 Small package
MAXIMUM RATINGS (Ta =25°C)
CHARACTERISTIC SYMBOL RATING N
Supply Voltage VDD, VSS 7 V
Differential Input Voltage DVIN 1'7 V
Input Voltage VIN VDD~V55 V
250 (SM8) SSOP8-P-0.50A
Power Dissipation PD mW Weight
. 200 (US8) a SSOP8-P-0.65 : 0.0219 (Typ.)
Operating Temperature Topr -40--85 C SSOP8-P-0.50A : 0.01g (Typ.)
Storage Temperature Tstg - 55--125 °C
MARKING (TOP VIEW) PIN CONNECTION (TOP VIEW)
SM8 VDD OUT IN(-) IN(+)
Fl Fl HHIEIIEI Fl
TypeName
fi— 'r-rss'"'.'':-".
5W51 5W
0 IF'T'V Lot No, 51
tl ld g bl
980508EBA1
OUT IN(-) IN(+) Vss
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe products described in this document are subject to foreign exchange and foreign trade laws.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1998-05-28 1/8
TOSHIBA
TC75W51FU/FK
ELECTRICAL CHARACTERISTICS
DC CHARACTERISTICS (VDD = 3.0V, Vss = GND, Ta = 25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP. MAX. UNIT
Input Offset Voltage VIO 1 Rs=1kf1, RF=100kQ - 2 10 mV
Input Offset Current 'IO - - - 1 - pA
Input Bias Current II - - - 1 - pA
Common Mode Input Voltage CMVIN 2 Rs=1kf1, RF=100kQ 0 - 2.5 V
Voltage Gain (Open Loop) GV - - 60 70 - dB
M . O t t V It VOH 3 RLZ100kQ 2.9 - - V
axlmum u pu o age VOL 4 Rrfa100kfy - - 0.1 v
fo.mP.on Mofje Input Signal CMRR 2 1hN=0.0--2.5V 55 65 - dB
Rejection Ratio
Supply Voltage Rejection Ratio SVRR 1 VDD=1.5~7.0V 60 70 - dB
Supply Current IDD 5 - - 120 400 prA
DC CHARACTERISTICS (VDD = 1.5V, VSS = GND, Ta = 25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN TYP. MAX. UNIT
Input Offset Voltage VIO 1 Rs =10k0, RF =100k0 - 2 10 mV
Input Offset Current IIO - - - - pA
Input Bias Current II - - - 1 - pA
Common Mode Input Voltage CMVIN 2 Rs--10kf1, RF=100kQ 0 - 1.0 V
Voltage Gain (Open Loop) GV - - 60 70 - dB
. VOH 3 RL;100kQ 1.4 - - v
Maximum Output Voltage VOL 4 RL2100kQ - - 0.1 V
Supply Current IDD 5 - - 100 300 PA
(Note) This device should be operated less than 70pA source current.
AC CHARACTERISTICS (VDD = 3.0V, l/SS = GND, Ta = 25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP. MAX. UNIT
Slew Rate SR - AV= OdB - 0.5 - V/ps
Unity Gain Cross Frequency fr - AV=40dB - 0.6 - MHz
AC CHARACTERISTICS (VDD =1.5V, VSS = GND, Ta = 25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP. MAX. UNIT
Slew Rate SR - AV: 0dB - 0.3 - V/ ps
Unity Gain Cross Frequency fT - AV=40dB - 0 5 - MHz
1998-05-28 2/8
TOSHIBA
TC75W51FU/FK
TEST CIRCUIT
1. SVRR, v.0
2. CMRR, CMVIN
3. VOH
VIM; "q
VDD=1.5V : 1/DD=VDDI, VOUT=VOUT1
VDD=7.0V : 1/DD=VDD2, VOUT=VOUT2
- VOUT1 - VOUTZ Rs
SVRR - 2Mog (I VDD1- VDD2 x RF + Rs
VDD Rs
VIC: (VOUT_ 2 >X RF+RS
1/IN=0.0V : V|N=V|N1: VOUT=VOUT1
VIN=2-5V .' VIN=VIN2, VOUT=VOUT2
VOUT1 -V0UT2 Rs
MRR = 2
C 0609“ 1/IN1-VIN2 x RF+RS
le1= 3D -0.05V
lhN2-- 'Y +0.05V
1998-05-28 3/8
TOSHIBA
TC75W51FU/FK
4. VOL
LO VOL
VDD/Zl
VIN2 =
+ 0.05V
- 0.05V
1998-05-28 4/8
TOSHIBA TC75W51FU/FK
200 IDD - VDD GV - f
VSS--GND
V1N=VDD/2
T =25°C
Ci" 160 a A
- 120 0
p, 80 $
a 40 >
0 1 2 3 4 5 6 7 10 100 1k 10k 100k 1M 10M
SUPPLY VOLTAGE VDD (V) FREQUENCY f (Hz)
RL - VDD VOH - VDD
VDD VSS--GND
'source = 70#A
Ta=25°C
g VOH 2.
u: l 'source: f?
e, 70prA w
3 100K <
Ff-' o
2 3 VOH
VSS--GND 0 RL
lsource=70PA J l 'source:
Ta=25°C
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
SUPPLY VOLTAGE VDD (V) SUPPLY VOLTAGE VDD (v)
1998-05-28 5/8
TOSHIBA
VOL - Isink
10pr 100pr 1m 10m
SINK CURRENT Isink (A)
PD - Ta
f? 200 \
-40 0 40 80 120
AMBIENT TEMPERATURE Ta
OUTPUT VOLTAGE VOL (v)
TC75W51FU/FK
VOL - Isink
VDD=3.0V
vss=GND
Ta=25°C
10p 100pt 1m 10m
SINK CURRENT Isink (A)
1998-05-28 6/8
TOSHIBA TC75W51FU/FK
OUTLINE DRAWING
SSOP8-P-0.65 Unit : mm
3 ".5!
:5 + I
Ln cu.
tt? CD u
". n m
". a',,
o~0.1 :
Weight : 0.021g (Typ.)
1998-05-28 7/8
TOSHIBA TC75W51FU/FK
OUTLINE DRAWING
SSOP8-P-0.50A Unit : mm
S, cu.
c5 CD ‘E
an f,y
+1 J- ai
o." " "
o~0.1 :
Weight : 0.01g (Typ.)
1998-05-28 8/8
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