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TC58FVM6B2AFT65-TC58FVM6B2AXB65-TC58FVM6T2AFT65
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY
TC58FVM6(T/B)2A(FT/XB)65 Block erase architecture
8 × 8 Kbytes/127 × 64 Kbytes Boot block architecture
TC58FVM6T2A: top boot block
TC58FVM6B2A: bottom boot block Mode control
Compatible with JEDEC standard commands Erase/Program cycles 5 cycles typ. Access Time (Random/Page) Power consumption
10 µA (Standby)
15 mA (Program/Erase operation)
55 mA (Random Read operation)
11 mA (Address Increment Read operation)
5 mA (Page Read operation) Package
TC58FVM6**AFT:
TSOPI48-P-1220-0.50 (weight: 0.51 g)
TC58FVM6**AXB:
P-TFBGA56-0710-0.80AZ (weight: 0.125 g) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
64MBIT (8M × 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY
DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash
memory organized as 8388608 words × 8 bits or as 4194304 words × 16 bits. The TC58FVM6T2A/B2A features
commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands
are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The
TC58FVM6T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or
Erase operation.
FEATURES Power supply voltage
VDD = 2.3 V~3.6 V Operating temperature
Ta = −40°C~85°C Organization
8M × 8 bits/4M × 16 bits Functions
Simultaneous Read/Write
Page Read
Auto Program, Auto Page Program
Auto Block Erase, Auto Chip Erase
Fast Program Mode/Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling/Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
