TC58FVB641FT-10 ,64-MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORYFEATURES • Power supply voltage • Block erase architecture 8 × 8 Kbytes / 127 × 64 Kbytes V = 2.7 V ..
TC58FVB641FT-70 ,64-MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORYTC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT (8M ..
TC58FVB641XB-70 ,64-MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORYFEATURES • Power supply voltage • Block erase architecture 8 × 8 Kbytes / 127 × 64 Kbytes V = 2.7 V ..
TC58FVM5B2AFT65 ,32MBIT (4M ?8 BITS/2M ?16 BITS) CMOS FLASH MEMORYFEATURES • Power supply voltage • Organization of ４Banks V = 2.3 V~3.6 V DDRate of Size BK0 BK1 BK2 ..
TC58FVM5B2AFT65 ,32MBIT (4M ?8 BITS/2M ?16 BITS) CMOS FLASH MEMORYTC58FVM5(T/B)(2/3)A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M ..
TC58FVM5T2AFT65 ,32MBIT (4M ?8 BITS/2M ?16 BITS) CMOS FLASH MEMORYfeatures commands for Read, Program and Erase operations to allow easy interfacing with microproces ..
TC962EPA , HIGH CURRENT CHARGE PUMP DC-TO-DC CONVERTER
TC9WMA1FK ,1,024-Bit (128 ?8 Bit) Serial E2PROMBlock Diagram Chip selectTiming Control Power supply CSV Power supply CCgenerator circuit (booster ..
TC9WMB1AFU ,Serial EEPROM (TC9WM series)Features 2• 2-wire serial interface (I C BUS) • Single power supply Read: V = 1.8 to 3.6 V CC Wri ..
TC9WMB1FK ,1024-Bit (128 ?8 Bit) 2-Wire Serial E2PROMFeatures 2 TM 2-wire serial interface (I C BUS ) (Note 1) Single power supply Read: V = 1.8 to ..
TC9WMB2AFK ,Serial EEPROM (TC9WM series)Block Diagram Address inputs A0 A1 A2Serial clock input SCL Timing Control Power supply V Power su ..
TC9WMB2FK ,2048-Bit (256 ?8 Bit) 2-Wire Serial E2PROMBlock Diagram Serial clock inputTiming Control Power supply SCLV Power supplyCCgenerator circuit ..
TC58FVB641FT-10-TC58FVB641FT-70-TC58FVB641XB-70-TC58FVT641FT-10-TC58FVT641FT-70
64-MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY
TC58FVT641/B641FT/XB-70,-10 Block erase architecture
8 × 8 Kbytes / 127 × 64 Kbytes Boot block architecture
TC58FVT641FT/XB: top boot block
TC58FVB641FT/XB: bottom boot block Mode control
Compatible with JEDEC standard commands Erase/Program cycles 5 cycles typ. Access time
70 ns (CL: 30 pF)
100 ns (CL: 100 pF) Power consumption
10 µA (Standby)
30 mA (Read operation)
15 mA (Program/Erase operations) Package
TC58FVT641/B641FT: TSOPI48-P-1220-0.50 (weight: 0.52 g)
TC58FVT641/B641XB: P-TFBGA63-0911-0.80AZ (Weight: 0.170 g) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
64-MBIT (8M × 8 BITS / 4M × 16 BITS) CMOS FLASH MEMORY
DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory
organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641/B641 features commands
for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based
on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The
TC58FVT641/B641 also features a Simultaneous Read/Write operation so that data can be read during a Write or
Erase operation.
FEATURES Power supply voltage
VDD = 2.7 V~3.6 V Operating temperature
Ta = −40°C~85°C Organization
8M × 8 bits / 4M × 16 bits Functions
Simultaneous Read/Write
Auto Program, Auto Erase
Fast Program Mode / Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling / Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
000707EBA1
