TC58FVT321FT-70 ,32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORYfeatures a Simultaneous Read/Write operation so that data can be read during a Write or Erase opera ..
TC58FVT641FT-10 ,64-MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORYfeatures commands for Read, Program and Erase operations to allow easy interfacing with microproces ..
TC58FVT641FT-70 ,64-MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORYfeatures a Simultaneous Read/Write operation so that data can be read during a Write or Erase opera ..
TC58FVT800FT-10 ,8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORYfeatures commands for Read, Program and Erase operations to allow easyinterfacing with microprocess ..
TC58FVT800FT-12 ,8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORYTOSHIBA TC58FVT800/B800F/FT-85,-10,-128-MBIT (1M M 8 BITS / 512K M 16 BITS) CMOS FLASH MEMORYThe TC ..
TC58FVT800FT-85 ,8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORYTOSHIBA TC58FVT800/B800F/FT-85,-10,-128-MBIT (1M M 8 BITS / 512K M 16 BITS) CMOS FLASH MEMORYThe TC ..
TCA0372DM2EL ,1A Output Current, Dual Power Operational AmplifierMAXIMUM RATINGSRating Symbol Value UnitSupply Voltage (from V to V ) V 40 VCC EE SInput Differentia ..
TCA0372DM2L2 ,Dual Power Operational AmplifierELECTRICAL CHARACTERISTICS (V = +15 V, V = –15 V, R connected to ground, T = +25°C, unless otherwis ..
TCA0372DP1 ,1A Output Current, Dual Power Operational AmplifierOrder this document by TCA0372/D** **DW SUFFIXPLASTIC PACKAGE16* ** **CASE 751G1SOP (12+2+2)LThe TC ..
TCA0372DP2 ,Dual Power Operational AmplifierOrder this document by TCA0372/D** **DW SUFFIXPLASTIC PACKAGE16* ** **CASE 751G1SOP (12+2+2)LThe TC ..
TCA0372DW ,Dual Power Operational AmplifierMAXIMUM RATINGSRating Symbol Value UnitSupply Voltage (from V to V ) V 40 VCC EE SInput Differentia ..
TCA0372DWR2 ,1A Output Current, Dual Power Operational AmplifierTCA0372, TCA0372B1.0 A Output Current,Dual Power OperationalAmplifiersThe TCA0372 is a monolithic c ..
TC58FVB321FT-10-TC58FVB321FT-70-TC58FVT321/FT-10-TC58FVT321FT-10-TC58FVT321FT-70
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
TC58FVT321/B321FT/XB-70,-10 Block erase architecture 8 × 8 Kbytes / 63 × 64 Kbytes Boot block architecture TC58FVT321FT/XB: top boot block TC58FVB321FT/XB: bottom boot block Mode control Compatible with JEDEC standard commands Erase/Program cycles 105 cycles typ. Access time 70 ns (CL: 30 pF) 100 ns (CL: 100 pF) Power consumption 10 µA (Standby) 30 mA (Read operation) 15 mA (Program/Erase operations) Package TC58FVT321/B321FT: TSOPI48-P-1220-0.50 (weight: 0.51 g) TC58FVT321/B321XB: P-TFBGA56-0710-0.80AZ (weight: 0.125 g) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY
DESCRIPTION The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58FVT321/B321 features commands
for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on
the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The
TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or
Erase operation.
FEATURES Power supply voltage VDD = 2.7 V~3.6 V Operating temperature Ta = −40°C~85°C Organization 4M × 8 bits / 2M × 16 bits Functions Simultaneous Read/Write Auto Program, Auto Erase Fast Program Mode / Acceleration Mode Program Suspend/Resume Erase Suspend/Resume data polling / Toggle bit block protection, boot block protection Automatic Sleep, support for hidden ROM area common flash memory interface (CFI) Byte/Word Modes
000630EBA1
