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TC55VBM316AFTN55TOSHIBAN/a47avai524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55VBM316AFTN55TOSHN/a277avai524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55VBM316AFTN-55 |TC55VBM316AFTN55TOSHIBAN/a6000avai524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55VBM316ASTN55TOSHIBAN/a2060avai524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM


TC55VBM316AFTN-55 ,524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAMTC55VBM316AFTN/ASTN40,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,28 ..
TC55VBM316ASTN55 ,524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAMFEATURES • Access Times (maximum): • Low-power dissipation Operating: 9 mW/MHz (typical) TC55VBM316 ..
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TC55VBM416AFTN55 ,1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAMfeatures usingCE1 and CE2 CE1 Access Time 55 ns • Data retention supply voltage of 1.5 to 3.6 V CE2 ..
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TC55VBM316AFTN55-TC55VBM316AFTN-55-TC55VBM316ASTN55
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55VBM316AFTN/ASTN40,55
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
DESCRIPTION

The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288
words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this
device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and
low power at an operating current of 3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in
low-power mode at 0.7 µA standby current (at VDD = 3 V, Ta = 25°C, typical) when chip enable (CE1 ) is asserted
high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for
data retention control, and output enable (OE ) provides fast memory access. Data byte control pin (LB, UB)
provides lower and upper byte access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. And, with a guaranteed operating extreme
temperature range of −40° to 85°C, the TC55VBM316AFTN/ASTN can be used in environments exhibiting extreme
temperature conditions. The TC55VBM316AFTN/ASTN is available in a plastic 48-pin thin-small-outline package
(TSOP).
FEATURES
Low-power dissipation
Operating: 9 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features usingCE1 and CE2 Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of −40° to 85°C Standby Current (maximum):
PIN ASSIGNMENT (TOP VIEW) PIN NAMES

48 PIN TSOP
*: OP pin must be open or connected to GND. Access Times (maximum): Package:
TSOPⅠ48-P-1220-0.50 (AFTN) (Weight:0.51 g typ)
TSOPⅠ48-P-1214-0.50 (ASTN) (Weight:0.36 g typ)
(Normal)
25
48
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