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TC55V1664FT-12 |TC55V1664FT12TOSHIBAN/a2100avai65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V1664FT-13 |TC55V1664FT13TOSHIBAN/a1460avai65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V1664FT-15 |TC55V1664FT15TOSN/a170avai65,536-WORD BY 16-BIT CMOS STATIC RAM


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TC55V1664FT-12-TC55V1664FT-13-TC55V1664FT-15
65,536-WORD BY 16-BIT CMOS STATIC RAM
TOSHIBA TC55V1664FT-12,-13,-15
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
65,536-WORD BY 16-BIT CMOS STATIC RAM
D E S C R I PT I O N
The TC55V1664FT is a 1,048,576-bit high-speed static random access memory (SRAM) organized as 65,536
words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed
and low-voltage operation, it operates from a single 3.3 V power supply. Chip enable (CE) can be used to place
the device in a low-power mode, and output enable (tTIT) provides fast memory access. Data byte control signals
(LB, UB) provide lower and upper byte access. This device is well suited to cache memory applications where
high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible.
The TC55V1664FT is available in plastic 44-pin TSOP packages (400 mil width) for high density surface
assembly.
FEAT_URES
0 Fast access time (the following are maximum values) 0 Single power supply voltage of 3.3 i" 0.3 V.
TC55V1664FT-12: 12 ns TC55V1664FT-12, -13: 3.3 V i 5%
TC55V1664FT-13: 13 ns TC55V1664FT-15: 3.3 i- 0.3 V
TC55V1664FT-15: 15 ns 0 Fully static operation
0 Low-power dissipation o All inputs and outputs are LVTTL compatible
(the following are maximum values) 0 Output buffer control usipg tTIT __
Cycle Time 12 13 15 20 30 ns 0 Data byte control using LB (101 to 108) and UB
Operation (max) 190 180 170 150 130 mA 0 $0110 1016)
. . ac ages:
Standby: 2 mA (all devices) TSOP E 44-P-400-0.80 (Weight: 0.45 g typ)
PIN ASSIGNMENT PIN NAMES
TC55V1664FT A0 to A15 Address Inputs
A4 1: 1o 44 = A5 l/OI t1I/016 Data Inputs/Outputs
A3 I: 2 43 = A6 CE Chip Enable
12 E , fd g (id T Write Enable Input
1&2 5 40 = g3 OE Output Enable
”8'15 E g A 33 2 $316 7 W Data Byte Control Inputs
V83 I: g g g; = II815 VDD Power (+ 3.3V)
V = W = l/ 14
um: 10 - 35 211/013 GND Ground .
VDD I: 11 > M = GND NC No Connection
GND = 12 33 = V
1/05 I: 13 t 32 = 1/812 NU Not Used (Input)
|/06|= 14 F- 31 = |/O11
l/O? 1: 15 v 30 :1I/O10
|/O_8 '2 16 29 = l/O9
WE I: 17 28 = NU
A15 = 18 27 = A8
A14 '2 19 26 2' A9
A13 = 20 25 = A10
A12 1: 21 24 :1 All
NC I: 22 23 = NC
(TSOP)
961001EBA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe products described in this document are subject to foreign exchange and foreign trade control laws.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1997-06-18 1/9
TOSHIBA TC55V1664FT-12,-13,-15
BLOCK DIAGRAM
3 v'.',',: H VDD
it big B 0
o z 00 MEMORY
ttc Fl “LE CELL ARRAY GND
256 x 256 x 16
Hg; f (1,048,576)
I/O3 < F- 5 CE < 'G li
um F- 3 F- a. u.
I/OS < 'h t < 'G “5
K8? Cy -$ t2ey'ai'
I/O9 SENSE AMP
l/O11 < I- ff, < S 5i
I/O12 t 2 t p. n. u.
(2e D EE COLUMN if/ah-
l/O15 m DECODER O m
COLUMN
ADDRESS BU FFER
GENERATOR A0 A2 A12 A14
A1 A11A13 A15
9| 5| E! 2‘
MAXIMUM RATINGS
SYMBOL RATING VALUE UNIT
VDD Power Supply Voltage - 0.5 to 4.6 V
VlN Input Terminal Voltage - 0.5* to 4.6 V
VI/o Input/Output Terminal Voltage - 0.5* to VDD + 0.5** V
Po Power Dissipation 1.2 W
Tsolder Soldering Temperature (10s) 260 ''C
Tstrg Storage Temperature - 65 to 150 'C
Topr Operating Temperature - 10 to 85 ''C
*: - 1.5V with a pulse width of 20% . tRC min (4 ns max)
**: VDD + 1.5V with a pulse width of 20% -tRc min (4 ns max)
1997-06-18 2/9
TOSHIBA
DC RECOMMENDED OPERATING CONDITIONS (Ta = 0° to 70°C)
TC55V1664FT-12,-13,-15
SYMBOL PARAMETER MIN TYP MAX UNIT
- 12, - 13 3.135 3.3 3.465
VDD Power Supply Voltage V
- 15 3.0 3.3 3.6
Ihr, Input High Voltage 2.0 - VDD + 0.3** V
" Input Low Voltage - 0.3 * - 0.8 V
*: - 1.0V with a pulse width of 20%-tRc min (4 ns max)
**: VDD + 1.0V with a pulse width of 20%-tRc min (4 ns max)
DC CHARACTERISTICS(Ta = 0° to 70°c,-12,-13: VDD = 3.3V , 5%,-15: VDD = 3.3 i 0.3V)
SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT
I Input Leakage Current V 0V t V 1 1 A
IL (Except NU Pin) IN - 0 DD _ - M
E=V|H Orm=V|L oroi--VIH
lLo Output Leakage Current VOUT = 0V to VDD -1 - 1 prA
Input Current VIN = 0 to 0.8V -1 - 20
||(NU) (NU Pin) 141A
V|N=0t00.2V -1 - 1
. IOH = - 2 mA 2.4 - -
VOH Output High Voltage
IOH = - 100 pA Yoo - 0.2 - - V
IOL = 2 mA - - 0.4
VOL Output Low Voltage
kw = 100PA - - 0.2
tcycle = 12 ns - - 190
- tcycle = 13 ns - - 180
. CE = VIL, Iout = 0mA
boo Operating Current tcycle = 15 ns - - 170 mA
Other Inputs = VIH or VIL
tcycle = 20 ns - - 150
tcycle = 30 ns - - 130
|DDS1 E = Ihro Other Inputs = V|H/V|L - - 20
Standby Current E = VDD - 0.2V mA
IDDSZ - - 2
Other Inputs = VDD - 0.2 V/0.2V
CAPACITANCE (Ta = 25°C,f = 1.0 MHz)
SYMBOL PARAMETER TEST CONDITION MAX UNIT
CIN Input Capacitance VIN = GND 6 pF
CI/o Input/Output Capacitance VI/o = GND 8 pF
Note: This parameter is periodically sampled and is not 100% tested.
1997-06-18 3/9
TOSHIBA
OPERATING MODE
TC55V1664FT-12,-13,-15
MODE tTi? ?TE 'flirt'' 'LI)'"" Trg- I/OI to I/O8 l/O9 to I/O16 POWER
L L Output Output IDDO
Read L L H H L High Impedance Output IDDO
L H Output High Impedance IDDO
L L Input Input IDDO
Write L x L H L High Impedance Input IDDO
L H Input High Impedance IDDO
L H H x x
Outputs Disable High Impedance High Impedance IDDO
L x x H H
Standby H x x x x High Impedance High Impedance IDDS
M : Don't care
Note: The NU pin must be left unconnected or tied to GND or a voltage level of less than 0.8 V.
You must not apply a voltage of more than 0.8V to the NU.
1997-06-18 4/9
TOSHIBA
TC55V1664FT-12,-13,-15
AC CHARACTERISTICS
(Ta = 0°to 70°C (Notel),-12,-13: VDD = 3.3V , 5%,-15:VDD = 3.3 , 0.3V)
READ_CYCLE
TC55V1664FT-12 TC55V1664FT-13 TC55V1664FT-15
SYMBOL PARAMETER UNIT
MIN MAX MIN MAX MIN MAX
tec Read Cycle Time 12 - 13 - 15 -
tAcc Address Access Time - 12 - 13 -
tco Chip Enable Access Time - 12 - 13 -
toe Output Enable Access Time - 6 - 6 -
tBA Upper Byte, Lower Byte Access Time - 6 - 6 - 8
tor, Output Data Hold Time from Address Change 3 - 3 - 3 -
tcog Output Enable Time from Chip Enable 3 - 3 - 3 - ns
toms Output Enable Time from Output Enable 1 - 1 - 1 -
Output Enable Time from Upper Byte, Lower
tag 1 - 1 - 1 -
tcoo Output Disable Time from Chip Enable - - -
tooo Output Disable Time from Output Enable - - - 8
Output Disable Time from Upper Byte, Lower
tBD - 7 - 7 - 8
WRITE CYCLE
TC55V1664FT-12 TC55V1664FT-13 TC55V1664FT-15
SYMBOL PARAMETER UNIT
MIN MAX MIN MAX MIN MAX
twc Write Cycle Time 12 - 13 - 15 -
twp Write Pulse Width 8 - 8 - 9 -
tcw Chip Enable to End of Write 10 - 10 - 12 -
tsw Upper Byte, Lower Byte Enable to End of 10 - 10 - 11 -
taw Address Valid to End of Write 10 - 10 - 11 -
tas Address Setup Time 0 - 0 - 0 - ns
tWR Write Recovery Time 0 - 0 - 0 -
tos Data Setup Time 7 - 7 - 8 -
tDH Data Hold Time 0 - O - 0 -
tOEw Output Enable Time from Write Enable 1 - 1 - 1 -
toow Output Disable Time from Write Enable - 7 - 7 - 8
AC TEST CONDITIONS FIG. 1
- 3.3V
Input Pulse Level 3.0V, 0.0V
Input Pulse Rise and Fall Time 3 ns 12000
1/0 20 = 500 1/0 pin
Input Timing Measurement 1 5V
R f L I .
e erence eve c - 30 F RL = 50n CL = 5pF 870n
Output Timing Measurement 1 5V L _ p
Reference Level .
VL = 1.5V (F0r tCOE, tOEE: tcon,
Output Load Fig. 1 tooo, tOEW and tODw)
1997-06-18 5/9
TOSHIBA TC55V1664FT-12,-13,-15
TIMING DIAGRAMS
ADDRESS
OD (See Note 6)
tooo (See Note 6)
(See 6)
tBD (See Note 6)
Note 6
Dout VALID DATA OUT
tCOE (See Note 6)
INDETERMINATE INDETERMINATE
WRITE CYCLE 1 (WT: CONTROLLED) (Note 5)
ADDRESS X X
tas ’ twp - tWR
-__r- f
WE k \x i
CE "N 2%
W, LE "As, A"
tODW (See Note 6) tOEW (See Note 6)
Dout (See Note 3)§ (See Note 4)
INDETERMINATE INDETERMINATE
I tos toc
Din X VALID DATA IN X
1997-06-18 6/9
TOSHIBA
TC55V1664FT-12,-13,-15
WRITE CYCLE 2 LEE- CONTROLLED) (See Note 5)
ADDRESS
tas twp tWR
S 'RN l
te, K ,
t tODW (See Note 6)
(See Note 6)
tCOE (See Note 6)
INDETERMINATE tos tDH
VALID DATA IN
WRITE CYCLE 3 (W, E CONTROLLED) (See Note 5)
ADDRESS
twp tum
_ tcw ’
‘t _ toow
(See NOSSEB) (See Note 6)
tBE (See Note 6) W A
INDETERMINATE tos tDH
VALID DATA IN
1997-06-18 7/9
TOSHIBA TC55V1664FT-12,-13,-15
Note: (1) Operating temperature (Ta) is guaranteed for transverse air flow exceeding 400
linear feet per minute.
(2)WF remains High for the Read Cycle.
(3)If tTE goes LOW coincident with or after IT/E goes LOW, the outputs will remain
at high impedance.
(4) If UE goes HIGH coincident with or before W goes HIGH, the outputs will remain
at high impedance.
(5) If UE- is HIGH during the write cycle, the outputs will remain at high impedance.
(6) The parameters specified below are measured using the load shown in Fig. 1
(A) tCOE, tOEE, tBE, tOEW ...... Output Enable Time
(B) tCOD, tOno, tBD, tODW ...... Output Disable Time
w, E rt
(A) (B)
r _V 0.2 v
0.2 v '
DOUT -, VALID DATA OUT -
0.2 V 1 - 0.2 V
INDETERMINATE ' INDETERMINATE4
1997-06-18 8/9
TOSHIBA TC55V1664FT-12,-13,-15
PACKAGE DIMENSIONS
Plastic TSOP (TSOPII 44-P-400-0.80)
Units in mm
HHRHHHHHHRHHHHHHHHHHRH
_'"r1"""''"1),1b,i,,' -
l 1 22
0.805TYP 0.3H).05
- {E 0.13:3
1 18.81MAX
I 18.41i0.1 iii; g i'i
l “ ,d 'e
01:0 05
0.5i0.1
Weight: 0.45g (typ)
1997-06-18 9/9

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