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TC55465AJ-15 |TC55465AJ15TOSN/a643avai15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM
TC55465AP-20 |TC55465AP20TOSHIBAN/a14avai20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM
TC55465AP-25 |TC55465AP25TOSN/a112avai25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM


TC55465AJ-15 ,15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAMFeatures _ Pin Connection (Top View). Fast access time .4 Tcssassm- T055465AP/AJ-15 15ns(max.) I TC ..
TC55465AP-20 ,20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAMfeatures low power dissipation when the device is deselected using chip enable (CE) and has an outp ..
TC55465AP-25 ,25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM44LTOSHIBATC55465AP/AJ-15/ 20/ 25/ 35SILICON GATE CMOS_ 65,536 WORD x 4 BIT CMOS STATIC RAMDescript ..
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TC5564AFL-20 ,8,192 WORD X 8 BIT CMOS STATIC RAMTOSHIBA M08 MEMORY PRODUCTSTC5564APL-15 ,TC5564APL-20TC5564AF L-15 ,TC5564AF L-208,192 WORD X 8 BIT ..
TC5564AFL-20 ,8,192 WORD X 8 BIT CMOS STATIC RAMTOSHIBA M08 MEMORY PRODUCTSTC5564APL-15 ,TC5564APL-20TC5564AF L-15 ,TC5564AF L-208,192 WORD X 8 BIT ..
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TC55465AJ-15-TC55465AP-20-TC55465AP-25
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM
T(0)S)MlllBlh
TC55465AP/ N-15/ 20/ 25/ 35
SILICON GATE CMOS
' 65,536 WORD x 4 BIT CMOS STATIC RAM
Description
The TC554ti5AP/AJi IS a 262, 144 bit high speed CMOS static random access memory organized as 65, 536 words by 4 bits and
operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high sp_e_ed operation.
The TC55_4_65AP/AJ features low power dissipation when the device IS deselected using chip enable (CE) and has an output
enable input (OE) for fast memory access. Also, the device power between memory accesses is reduced by an automatic power
down circuit.
The TC55465AP/AJi IS suitable for use in high speed applications such as cache memory and high speed storage. Al inputs
and outputs are ITL compatible.
The TC55465AP/AJi Is available In a 300mil width, 28- -pin DIP and SOJ suitable for high density surface assembly.
p Features . Pin Connection (Top View) _
. Fastaccest time TCSSAGSAP Tcssassm
- T055465AP/AJ-15 15ns (max.) 3 """"-N,,.,,k"-r"
- TC55465AP/AJ-20 20ns (max.) _ NCE 1 ZBDVDD 1
- TC55465AP/AJ-25 25ns (max.) A15: 2 27 3 A14 2
- TC55465AP/AJ-35 35ns (max.) _ ABE 3 25] A13 3
. Low power dissipation T T F V A7: 4 25 il A9 4
- ?ggsrsalgsn/IP/AJ 15 120 A( ) gust 5 243A10 5
- - m max,
A A1 1 6
-. T055465AP/AJ-20 120mA (max.) AiE ; g; 3A12 7
- T055465AP/AJ-25 120mA (max.) A3: 8 21 " C 8
-. TCr5465AP/AJ-35 100mA (max.)
- Standby:1mA(max) AZE 9 20] N C 9
. Single 5V power supply: 5V+10% A1 t 10 1931/01
q Fully static operation V A0: l) 13] V02
q Inputs and outputs TTL c_o.mpatible ' EEE 12 17] V03
. Output buffer control: TE 5H: 13 1ti2 l/04
. Package: . GNDQM 153W?
- TC55465AP: DF28-P-300B V (Dip):
- TC55465AJ: SOJ28-P-300A
Pin Names
A0 - A15 _Address Inputs
l/O1 _ l/O4 Data lnputs/Outputs
tX Chip Enable Input
WE ' Write Enable Input
UE Output Enable Input
VDD Power (+5V)
GND Ground
NC No Connection
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. B-41
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T055465APIAJ-15I20I25/35 Static RAM
Block Diagram
A13 o--
A6 o-- w a: MEMORY CELL
A4 O-' mu; dl ARRAY A----" V90
A3 th-.) as: , O F
Al o- “(m L. ttt o H (262,144)
A0 cr--
t-ce l _ I
1101 C
a! / SENSE AMP " ,.. x
I/02 <52 / l (am
"' a. u. ' H- a. ‘L
< z D < " u.
t/03 o - m COLUMN Q 8 ii k--,
I IO 4 e DECODER
8, COLUMN '. CE
2 4 ADDRESS BUFFER
- 84 m4. A l u
" an A7 A9 A11 A14
Lptl, A8 A10 A12 A15
m ---c:ciiC)
Ul? P ___2L/‘
E: o-------)-------- CE
Operating Mode
_ PIN - - -
MODE CE OE WE I/01 - l/04 POWER
Read L L _ H Output boo
Write L * L Input IDDO
Output Disable L H H High Impedance IDDQ
Standby H * * High Impedance loos
*H or L
Maximum Ratings
SYMBOL ITEM _ RATING UNIT
VDD Power'Supply Voltage ' Ah5 _ 7.0 V
VIN Input Voltage . 92.0 .- 7.0 V
Vvo Input/Output Voltage -0.5' _ VDD + 0.5 V
PD Power Dissipation T 1.0 W
TSOLDER Soldering Temperature . Time 260 . 10 ''t? . sec
Tsrns Storage Temperature -65 Pl 150 °C
TopR Operating Temperature -10 - 85 ''C
'-3V with a pulse width of 10ns
B-42 TOSHIBA AMERICA ELECTRONIC CDMPDNENTS, INC.
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_ Static RAM.
TC55465AP/AJ-15/20/25f35
DC Recommended Operating Conditions
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
VDD Power Supply Voltage 4.5 5.0 5.5 V
V». Input High Voltage 2.2 . - VDD + p.5 V
VIL Input Low Voltage -0.5* - 0.8 V I
' -3V with a pulse width of Ions
DC Characteristics (Ta = 0 - 70°C, VDD = 5W10%)
TEST CONDITION
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
L Input Leakage Current " = 0 - VDD - - i1 pA
C-C..-) orCE=V orm..-N
I Out ut Leaka e Current IH IH IL, - - :1
LO p g VOUT = 0 - VDD . 't
lor, _ Output High Current _ Vor, = 2.4V -4 - - mA
IOL Output Low Current VOL: 0.4V 8 - - mA
-15 - - 120
to cle = Min cycle _20 - _ 120
IDDO Operating Current 6% = " _ mA
' Other Inputs = VIHNIL -25 - - 120
_ -35 - - 100
3919's = Min cycle -20
IDDS1 . CE = VIH 25 - - 20
Standby Current Other Inputs = VIHNIL - mA
I CE = Voc, - 0.2V - - 1
DDS2 Other Inputs = Vor: - 0.2V or 0.2V _
Capacitance' (Ta = 25''C, f = 1.0MHz)
SYMBOL PARAMETER TEST CONDITION MAX. UNIT
Cm Input Capacitance VIN = GND 6 pF
0110 Input/Output Capacitance l/vc; = GND 8 pF
*This parameter is periodically sampled and is riot 100% tested.
TOSHIBA AMERICA ELECTRONIC COMPONENTS, mci B-43
Cl 90572146 DUEEBHD ISS El
T055465APIAJ-15/20I25/35 Static RAM
AC Characteristics (Ta = 0 m. 70oC0), VDD = 5Vi10%)
Read Cycle . .
TCSS465AP/AJ-15 T055465AP/AJ-20 T055465AP/AJ-25 Ttyis4tiiiatw-ti'
SYMBOL PARAMETER _ UNIT
MIN. MAX. MIN. MAX. MIN. MAX. _ MIN. MAX.
tm:: Read Cycle Time 15 - 20 - 25 V - 35 -
tACC Address Access Time - 15 - 20 - 25 - 35
tco E Accéss Time - 15 - 20 - 25 - 35
tog WAccess Time - 8 - 1O - 12 - _ 15 T
tOH Output Data Hold Time from Address 5 - 5 - is T - 5- - ' ns
Change _
tcos Output Enable Time from E 5 - 5 - 5 - 5 -
icon Output Disable Time from W - 8 - 8 - 10 - 15
toes Output Enable Time from UE 1 - 1 - 1 - 1 -
tooo Output Disable Time from o-E - 8 - 8 - 10 - ' 15
Write Cycle .
_ . T055465AP/AJ-15 TC554ti5M/hr20 T055465hP/lu-25 T055465AP/M-35
SYMBOL T PARAMETER . UNIT
MIN. MAX. MIN. MAX. MIN. Wot, MIN. MAX.
twc Write Cycle Time 15 - 20 - 25 - 35 -
twp Write Pulse Width 10 - 11 - 13 - 18 -
tAW Address Valid to End of Write 12 - 13 - 15 - 20 -
tcw Chip Enable to End of Write F 12 - 13 - 15 - 20 -'
tAS Address Setup Time T 0 - 0 - 0 - 0 - ns
twn Write Recovery Time 0 - 0 - 0 - 0 '-
tos Data Setup Time 8 - IO - 12 - 15 -
tDH Data Hold Time 0 - O T - 0 - c" 0 T -
tOEW Output Enable Time from WE ' 1 - - 1 - 1 - _
toow Output Disable Time from w-E - 8 - 8 - 1O - 15
. AC Test Conditions
Input Pulse Levels 3.0V/0.0V SV 5V .
Input Pulse Rise and Fall Time 3ns g
Input Timing Measurement Reference Levels 2.2V/0.8V 480tl Mon
Output Timing Measurement Reference Levels 2.0V/0.8V l/Opin IIOpin
. Output Load Fig. 1 . V
ct. = 30pF - 2ssn CL = SPF 2550
t For tcoe. toa, tcoo,
III QUENEHB [3021:1311]; MI D
' tooo. tow and toow
Figure t.
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
Static RAM T055465AP/AJ-15/20/25/35
Timing Waveforms
Read Cycle (2)
ADDRESSES
totrotsy
Dom Hi him dance OUTPUT DATA VALID
UNKNOWN UNKNOWN
Write Cycle 1 WI Mig Controlled Write)
ADDRESSES
Dour 3 Hi h lm edance 4)
UNKNOWN t UNKNOWN
Om T _ DATA STABLE
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. B-45
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TC55465AP/Ad-15/20/25/35
Write Cycle 2 (5) ttTit- Controlled Write)
ADDRESSES
Static RAM
High Impedance
UNKNOWN os tim
om DATA STABLE
B-46 TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
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Static RAM T055465AP/AJ-15/20l25/35
Notes:
1 . The operating temperature (Ta) is guaranteed with transverse air flow exceeding 400 linear feet per minute.
2. WE ' high for read cycles.
3, If the E low transition occurs coincident with or after the WTE low transition, outputs
remain in a high impedance state.
4. If the E high transition occurs coincident with or prior to the W? high transition, outputs
remain in a high impedance state. .
5. If tTE is high during ay/rite cycle, the outputs are in a high impedance state during this period.
6. The following parameters are measured using the load shown in Fig, 1.
(A) tcos, toErr, tOEW ..... Output Enable Time
(B) tcoo, tooo, tODW . . . . Output Disable Time
I 4____.__,(a) " 0.2V
Hi h Im edance ' Hi h Irn edance
Dour p tll, [OUTPUT DATA VALID X 9 p .
UNKNOWN UNKNOWN “ 0.2V
TOSHIBA AMERICA ELECTRONIC COMPONENTS, wc. B-47
III “1097346 Cll3ii!ia3ctq BTU El

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