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TC554161AFTI-10L |TC554161AFTI10LTOSHIBAN/a2600avai262,144-WORD BY 16-BIT STATIC RAM
TC554161AFTI-70L |TC554161AFTI70LTOSHIBAN/a10000avai262,144-WORD BY 16-BIT STATIC RAM
TC554161AFTI-85L |TC554161AFTI85LTOSHIBAN/a6250avai262,144-WORD BY 16-BIT STATIC RAM


TC554161AFTI-70L ,262,144-WORD BY 16-BIT STATIC RAMfeatures using CE . -70,-70L -85,-85L -10,-10L Data retention supply voltage of 2 to 5.5 V Access ..
TC554161AFTI-85L ,262,144-WORD BY 16-BIT STATIC RAMTC554161AFTI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 ..
tc554161fti-85l ,262,144-WORD BY 16-BIT STATIC RAMTOSHIBA TC554161FTl-85L,-10L262,144-WORD BY 16-BIT STATIC RAMThe TC554161FTI is a 4,194,304-bit sta ..
TC554161FTL-70L ,262,144-WORD BY 16 BIT STATIC RAMTOSHIBA TC554161FTL-7OL,-85L,-1OL262,144-WORD BY 16-BIT STATIC RAMThe TC554161FTL is a 4,194,304-bi ..
TC554161FTL-70L ,262,144-WORD BY 16 BIT STATIC RAMTOSHIBA TC554161FTL-7OL,-85L,-1OL262,144-WORD BY 16-BIT STATIC RAMThe TC554161FTL is a 4,194,304-bi ..
TC554161FTL-85L ,262,144-WORD BY 16 BIT STATIC RAMapplications where high speed, low power and battery backup are required. TheTC554161FTL is availab ..
TC9256APG ,PLLTC9256, 57APG/AFG TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC9256APG, TC9256AFG, ..
TC9256f ,PLL FOR DTSTOSHIBA TC9256,57P/FTC9256P, TC9256F, TC9257F, TC9257FTC9256P, TC9256F, TC9257P and TC9257F are pha ..
TC9256P ,PLL FOR DTSTOSHIBA TC9256,57P/FTC9256P, TC9256F, TC9257F, TC9257FTC9256P, TC9256F, TC9257P and TC9257F are pha ..
TC9257AFG ,PLLBlock Diagram Note: There are no pins marked z in the TC9256APG or TC9256AFG. Pin names and numbe ..
TC9257AFG ,PLLBlock Diagram Note: There are no pins marked z in the TC9256APG or TC9256AFG. Pin names and numbe ..
TC9257F ,PLL FOR DTSTOSHIBA TC9256,57P/FTC9256P, TC9256F, TC9257F, TC9257FTC9256P, TC9256F, TC9257P and TC9257F are pha ..


TC554161AFTI-10L-TC554161AFTI-70L-TC554161AFTI-85L
262,144-WORD BY 16-BIT STATIC RAM
TC554161AFTI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS�
262,144-WORD BY 16-BIT STATIC RAM
DESCRIPTION

The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by
16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V �
10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of
10 mA/MHz (typ) and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 2 �A standby
current (typ) when chip enable (CE ) is asserted high. There are two control inputs. CE is used to select the device
and for data retention control, and output enable (OE ) provides fast memory access. Data byte control pin (LB, ) provides lower and upper byte access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. And, with a guaranteed operating extreme
temperature range of �40° to 85°C, the TC554161AFTI can be used in environments exhibiting extreme
temperature conditions. The TC554161AFTI is available in a plastic 54-pin thin -small-outline package (TSOP).
FEATURES
Low-power dissipation
Operating: 55 mW/MHz (typical) Single power supply voltage of 5 V � 10% Power down features using CE. Data retention supply voltage of 2 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of �40° to 85°C Standby Current (maximum):
PIN ASSIGNMENT (TOP VIEW) PIN NAMES

*: OP pin must be open of connected to GND. Access Times (maximum): Package:
TSOP II54-P-400-0.80 (AFTI) (Weight: 0.57 g typ)A3A2A1A0I/O16I/O15VDDGNDI/O14I/O13R/WI/O12I/O11GNDVDDI/O10I/O9NCA17A16A15A14A13NC I/O1 I/O2 VDD GND I/O3 I/O4 OP NC I/O5 I/O6 GND VDD I/O7 I/O8 NC OE LB
(Normal pinout)
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