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TC554001TOSHIBAN/a47avai524,228 WORDS x 8 BIT STATIC RAM


TC554001 ,524,228 WORDS x 8 BIT STATIC RAMTOSH I BA TC554001AF/AFT/ATR-70,-85,-10,-7OL,-85L,-1OL524,288 WORDS M 8 BIT STATIC RAMThe TC554001A ..
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TC554001AF-70L ,524,288-WORD BY 8-BIT STATIC RAMTC554001AF/AFT/ATR-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE C ..
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TC554001
524,228 WORDS x 8 BIT STATIC RAM
Ttts H I BA TC554001AF/AFT/ATR-70,-85,-10,-70L,-85 L,-10L
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288 WORDS M 8 BIT STATIC RAM
DESCRIPTION
The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory (SRAM) organized as
524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device
operates from a single 5V: 10% power supply. Advanced circuit technology provides both high speed
and low power at an operating current of 10mA/MHz(typ) and minimum cycle time of 70 ns_.__It is
automatically placed in low-power mode at 2 ,uA standby current (typ) when chip enable (CE) is
asserted high. There are two control inputs. UE is used to select the device and for data retention
control, and output enable (OT?) provides fast memory access. This device is well suited to various
microprocessor system applications where high speed, low power and battery backup are required.The
TC554001AF/AFT/ATR is available in a standard plastic 32-pin small-outline package(SOP) and normal
and reverse pinout plastic 32-pin thin-small-outline package(TSOP).
FEATURES
0 Low-power dissipation 0 Access Time (maximum)
Operating: 55 mW/MHz (typical) TC554001AF/AFT/ATR
0 Single power supply voltage_o£ 5Vi 10 % -70,-70L -85,-85L -10,-10L
0 Power down features using CE Access Time 70 ns 85 ns 100 ns
0 Data retention supply voltage of 2.0 to 5.5 V E Access Time 70 ns 85 ns 100 ns
I Direct TTL compatibility for all inputs and o-E Access Time 35 ns 45 ns 50 ns
outputs 0 Pa ck a .
. . ge:
dt Standby curre::::::i:1::1)'/ATR SOP32-P-525-1.27 (AF) (Weight: g typ)
TSOPE 32-P-400-1.27 (AFT) (Weight: g typ)
-70,-85,-10 -75L,-85L,-10L TSOPE 32-P-400-1.27A (ATR) (Weight: g typ)
5.5V 100 PA 50 PA
3.0V 50 ,uA 25 #A
PIN ASSIGNMENT (TOP VIEW) PIN NAMES
o32 PIN AF/AFT o32 PIN ATR A0 to A18 Address Inputs
A18 I: 1 V 32 Cl V99]: 32 1 Cl A18 MN Read/Write Control
A161: 2 31] NBC 31 2 Cl A16 o" Output Enable
A141: 3 30:! A17E 30 3 Cl A14 E Chi Enable
Am: 4 29] R/WI:29 43A12 p
A7 I: 5 28Cl A13: 28 5 Cl A7 l/OI to l/O8 Data Input/Output
A6 I: e 27Cl A8 I: 27 6 Cl A6 Vor, Power (+ 5V)
A5 I: 7 26Cl A9 E 26 7 Cl A5 GND Ground
A4C8 25:1 A11E25 83A4
A3E9 24] o-ECM 9jA3
A2E10 23:1 ALOEZS 10:1 A2
A1E11 223 CE C22 11] A1
A0 I: 12 213 I/O8[E 21 12] A0
I/OIC 13 203 um: 20 133 l/OI
um: 14 19:! I/06E 19 143 I/O2
I/03E 15 18:1 I/05E18 1531/03
GND 16 17Cl l/OI 17 16Cl GND
961001EBA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe products described in this document are subject to foreign exchange and foreign trade control laws.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1998-08-18 1/10
Ttts H I BA TC554001AF/AFT/ATR-70,-85,-10,-70L,-85 L,-10L
BLOCK DIAGRAM
Q} a 3n: 3 -oVDo
LLI LLI u.1
A3 “tr mg tisf, MEMORYCELL - oGND
fel tiit] fit; 'ii.iii ARRAY
A6 < <6 A03 it g: ith' (4194304)
A14 C) o 0
A18 ttt M I!
l/OI SENSE AMP
COLUMN ADDRESS
tft COLUMN ADDRESS
l/O8 d;
3 COLUMN ADDRESS
A8A§ng1émi1§1g17
9| EQI
OPERATION MODE
OPERATION MODE E E W l/OI to |/08 POWER
Read L L H DOUT IDDO
Write L x L DlN IDDO
Output Disabled L H H High-Z IDDO
Standby H x x High-Z IDDS
Note: X =don't care. H=logic high. L=logic low.
ABSOLUTE MAXIMUM RATINGS
SYMBOL RATING VALUE UNIT
VDD Power Supply Voltage - 0.3 to 7.0 V
" Input Voltage - 0.3* to 7.0 V
VI/o Input and Output Voltage - 0.5 to VDD + 0.5 V
PD Power Dissipation 0.6 W
Tsolder Soldering Temperature (10s) 260 ''C
Tstrg. Storage Temperature - 55 to 150 ''C
Topr. Operating Temperature 0 to 70 T
* - 3.0V when measured at a pulse width of 50 ns
1998-08-18 2/10
Ttts H I BA TC554001AF/AFT/ATR-70,-85,-10,-70L,-85 L,-10L
DC RECOMMENDED OPERATING CONDITIONS (Ta = 0° to 70°C)
SYMBOL PARAMETER MIN TYP MAX UNIT
VDD Power Supply Voltage 4.5 5.0 5.5
" Input High Voltage 2.2 - VDD + 0.3 V
" Input Low Voltage - 0.3* - 0.8 V
VDH Data Retention Supply Voltage 2.0 - 5.5 V
* - 3.0V when measured at a pulse width of 50 ns
DC CHARACTERISTICS (Ta = ty' to 70°C, VDD = 5V i 10%)
SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT
IIL Input Leakage Current VIN = 0V to VDD - - i 1.0 pA
IOH Output High Current VOH = 2.4V - 1.0 - - mA
IOL Output Low Current VOL = 0.4V 2.1 - - mA
E = V R/W = v E = v
lLo Output Leakage Current IH or IL or IH - - , 1.0 [1A
VOUT = 0V to VDD
E = VIL and MN = " min - - 70
|D001 IOUT = 0 mA Tcycle mA
Other Inputs = VIHNIL 1 M; - 15 -
Operating Current -
CE = 0.2V and R/W = VDD-(h2V min - - 60
IDDOZ IOUT = 0 mA Tcycle mA
Other Inputs = l/DD-O.:? V/0.2V 1 M; - 10 -
|DDS1 E = " - - 3 mA
Ta = 25°C - 2 -
- -70, -85, -10
Standby Current CE = VDo-0.2V Ta-- o'' to 70°C - - 100
I V = 2.0 to 5.5V A
DDS2 DD 0 D Ta = 25''C - 2 5 #
Ta = 0 to 70 C -70L,-85L,-10L
Ta = (Y' to 70°C - - 50
CAPACITANCE (Ta = 25°C, f = 1 MHz)
SYMBOL PARAMETER TEST CONDITION MAX UNIT
CIN Input Capacitance VIN = GND 10 pF
COUT Output Capacitance VOUT = GND 10 pF
Note: This parameter is periodically sampled and is not 100% tested.
1998-08-18 3/10
Ttts H I BA TC554001AF/AFT/ATR-70,-85,-10,-70L,-85 L,-10L
AC CHARACTERISTICS AND OPERATING CONDITIONS (Ta = 0° to 70°C, VDD = 5V i 10%)
READ CYCLE
TC554001AF/AFT/ATR
SYMBOL PARAM ETER -70, -70L -85, -85L -1o, -10L UNIT
MIN MAX MIN MAX MIN MAX
tRC Read Cycle Time 70 - 85 - 100 -
tACC Address Access Time - 70 - 85 - 100
tco Chip Enable Access Time - 70 - 85 - 100
tog Output Enable Access Time - 35 - 45 - 50
tcos Chip Enable Low to Output Active 10 - 10 - 10 - ns
toga Output Enable Low to Output Active 5 - 5 - 5 -
too Chip Enable High to Output High-Z - 25 - 30 - 35
tODo Output Enable High to Output High-Z - 25 - 30 - 35
tom Output Data Hold Time 10 - 10 - 10 -
WRITE CYCLE
TC554001 AF/AFT/ATR
SYMBOL PARAM ETER -7o, -70L -85, -85L -1o, -10L UNIT
MIN MAX MIN MAX MIN MAX
twc Write Cycle Time 70 - 85 - 100 -
twp Write Pulse Width 50 - 55 - 60 -
tcw Chip Enable to End of Write 60 - 70 - 80 -
tas Address Setup Time 0 - O - 0 -
tWR Write Recovery Time 0 - 0 - 0 - ns
toow MN Low to Output High-Z - 25 - 30 - 35
toew R/W Hige to Output Active 5 - 5 - 5 -
tos Data SetupTime 30 - 35 - 4O -
tDH Data Hold Time 0 - 0 - 0 -
AC TEST CONDITIONS
Output Load: 100 pF + one TTL gate
Input Pulse Level: 0.6V, 2.4V
Timing Measurements: 1.5 V
Reference Level: 1.5 V
tr, tF: 5 ns
1998-08-18 4/10
TOSHIBA
TIMING WAVEFORMS
READ CYCLE (See Note 1)
TC554001AF/AFT/ATR-70,-85,-10,-70L,-85 L,-10L
ADDRESSES X
tacc tOH
m 'N /
tOEE tODO
Dom OUTPUT DATA VALID
WRITE CYCLE 1 (R/W CONTROLLED) (See Note 4)
ADDRESSES X
twp tum
Yr" Ai) /
E %a /
toow toEw
DOUT (See Note 2) (See Note 3)
tos tDH
DIN (See Note 5) DATA IN STABLE (See Note 5)
1998-08-18 5/10
Ttts H I BA TC554001AF/AFT/ATR-70,-85,-10,-70L,-85 L,-10L
WRITE CYCLE 2 (CE CONTROLLED) (See Note 4)
ADDRESSES X
' ' twp tWR
R/W % /
E YF'" tii)!, /
tCOE _ toow
DOUT ,
tos tDH
D.N (See Note 5) DATA IN STABLE (See Note 5)
(1) R/W remains High for Read Cycle.
(2) If TftT goes coincident with or after R/W goes LOW, the output will remain at high impedance.
(3) If CE goes HIGH coincident with or before R/W goes HIGH, the output will remain at high
impedance.
(4) IF C-E is HIGH during the write cycle, the outputs will remain at high impedance.
(5) Because I/O signals may be in the output state at this time, input signals of reverse polarity
must not be applied.
1998-08-18 6/10
Ttts H I BA TC554001AF/AFT/ATR-70,-85,-10,-70L,-85 L,-10L
DATA RETENTION CHARACTERISTICS (Ta = 0° to 70°C)
SYMBOL PARAMETER MIN TYP MAX UNIT
VDH Data Retention Supply Voltage 2.0 - 5.5 V
l/DH = 3.0V - - 50
-70,-85,-10
vDH = 5.5V - - 100
IDDSZ Standby Current pA
vDH = 3.0V - - 25*
-70L, -85L, -10L
vDH = 5.5V - - 50
tCDR Chip Deselect to Data Retention Mode Time 0 - - nS
tR Recovery Time 5 - - mS
* 5 PA (max) at Ta = (Y' to 40°C
CE Controlled Data Retention Mode
VDD l DATA RETENTION MODE
4.5 v -.-.-.-.-.-. - - - - M.-.-.-.-.-.-.-.-.-.-.-.-.-.-.-.-.-.,-.-.-.-.-.-.-.-.-. -
(See Note) (See Note)
" --- l /
- vDD-o.2 v
CE tCDR tR
Note: When CT is operating at the Vm level (2.2V), the standby current is given by IDDSI
during the transition of VDD from 4.5 to 2.4V.
1998-08-18 7/10
Ttts H I BA TC554001AF/AFT/ATR-70,-85,-10,-70L,-85 L,-10L
PACKAGE DIMENSIONS (SOP32-P-525-1.27)
iii2suucsuuvrvc1s7-----a;
10 7i0 2
14.13i0.3
ii1ljlj)ilj)lirielilili11ri,------,
O .775TYP P
h 20.6i0.2 u
2.8MAX
Weight: g (typ)
Unit in mm
(525mil)
1998-08-18 8/10
Ttts H I BA TC554001AF/AFT/ATR-70,-85,-10,-70L,-85 L,-10L
PACKAGE DIMENSIONS (TSOPII 32-P-400-1.27)
Unit in mm
'2RRFlfqRFllqRlqFlFlFlplplpl
g: ct.
bfEtihbjbdEEldtildld HHEI
0.95TYP 0 4i0.1m
21.35MAX
20.95i0.1 i?, ii ("a
3 y. 9't
Weight: g (typ)
1998-08-18 9/10
Ttts H I BA TC554001AF/AFT/ATR-70,-85,-10,-70L,-85 L,-10L
PACKAGE DIMENSIONS (TSOPII 32-P-400-1.27A)
FlplplRFlFl'2FlFlpiRfqFiplpiq
tlc-'; a
LEjHH jbiriblhhrjldelhieiejef
0.95TYP 0,410.1 0721
1.27 .
21.35MAX
20.95101 ---F g! g;
l 2 ii) ii.
Weight: g (typ)
Unit in mm
1998-08-1 8 10/10

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