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TC55257BFL-10 |TC55257BFL10TOSN/a250avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BFL-10L |TC55257BFL10LTOSN/a32avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BFL85TOSHIBAN/a6000avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BFL-85 |TC55257BFL85TOSHN/a1339avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BFL-85 |TC55257BFL85TOSN/a38avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BFL-85 |TC55257BFL85TOSHIBAN/a5704avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BFL-85L |TC55257BFL85LTOSHIBA ?N/a17avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BFL-85L |TC55257BFL85LTOSHIBAN/a2596avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BFL-85L |TC55257BFL85LTOSN/a25avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BFTL-10 |TC55257BFTL10TOSHIBAN/a1200avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BFTL-10L |TC55257BFTL10LTOSHIBAN/a2100avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BFTL-85 |TC55257BFTL85TOSHIBAN/a1460avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BFTL-85L |TC55257BFTL85LTOSHIBAN/a700avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BPL10TOSHIBAN/a10000avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BPL-10 |TC55257BPL10TOSHIBAN/a2000avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BPL-10 |TC55257BPL10TOSHN/a10avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BPL-10 |TC55257BPL10TOSN/a90avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TC55257BPL-10L |TC55257BPL10LTOSHIBA ?N/a8avaiSILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM


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TC55257BFL-10-TC55257BFL-10L-TC55257BFL85-TC55257BFL-85-TC55257BFL-85L-TC55257BFTL-10-TC55257BFTL-10L-TC55257BFTL-85-TC55257BFTL-85L-TC55257BPL10-TC55257BPL-10-TC55257BPL-10L
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM
TGSHHIA
”17(255257BPL/BFL/BSPL/BFTL/B’IRL85L/lOLCLV)
SILICON GATE CMOS
32,768 WORD x 8 BIT STATIC RAM
Description
The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a
single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of
5mA/MHz Exp.) and a minimum cycle time of 85ns.
When CE is a logical high, the device is placed in a low power_standby mode in which the standby current is 211A at room tem-
perature. The T05525_7BPL has two control inputs, Chip enable (CE) allows for device selection and data retention control, while an
output enable input (O-E) provides fast memory access. The TC55257BPLi lS suitable for use in microprocessor systems where high
speed, low power, and battery backup are required,
The TC55257BPLi IS offered m a standard dual- in- line 28- -pin plastic package (0.6/0.3 inch width), a small outline plastic pack-
age, and a thin small outline plastic package (forward type, reverse type). .
Features
. Low power dissipation:
. Standby current:
Pin Connection (Top View)
27.5mW/MH2 (typ.)
(reverse type)
211A (max.) at Ta = 25°C
(forward type)
. Single 5V power supply 2:; f ', C '/ :2; (lrlaliallll. 1llNlallleil,
. Access time Imax.) A7 t a 26 gm:
_iai2'm'u"u""a'FT"'" 2:11 ', Z: a l'
-85L(LV) -10L(LV) M E 6 23 l Att
A3 t 7 22 Jiri
Access Time 85ns 100ns A2 t 8 21 l A10
Chip Enable Access Time 85ns 100ns At t 9 20 LE CE
Output Enable Time 45ns ' 50ns "tt 't I: 333:
q Power down feature: 51? ”WE 12 " gm”
. Data retention supply voltage: 2.0 - 5.5V 'ge, :2 '/, l 'd',', " "
. Inputs and outputs TTL compatible " 28
. Package TC55257BPL : DlP28-P-600 lllllllllllllllMllllll 'iigaaii
TC55257BFL : SOP28-P-450
TC55257BSPL : DF28-P-300B
TC55257BFTL : TSOP28-P
TC55257BTRL .' TSOP28-P-A
Pin Names
A0 ~.A14 Address Inputs
R/W Read/Write Control Input
-t5TE" Output Enable Input
E Chip Enable Input
i/O1 - 1108 Data Input/Output _
VDD Power (+5V)
GND Ground
PINNO. 1 2 3 4 5 6 7 a 9 10 11 lit' 13 14
PIN NAME o-E A11 As A8 A13 RAN VDD A14 A12 A7 As As N As
PIN NO. 15 16 17 18 19 20 21 22 23 24 25 26 27 28
PIN NAME A2 A1 A0 1101 l/O2 I/OS GND I/O4 1/05 1/06 l/O? |/08 trt- No
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
© 9097298 003131181} ins ©
T655257BPIJBFLIBSPL/BFI'L/BTRL-85LI10L(LV) Static RAM
Block Diagram
A--o Voo
tif m m
A7 t! t 'll f, MEMORY CELL
A8 a m o a
AP 21% t a: to (262144)
A14 a: =
. - - - 3 2 - - - -
”.01 is' SENSEAMPQ
z COLUMN ADDRESS
l O DECODER
t- 4 COLUMN ADDRESS
g y. ttt REGISTER
I tO8 o a
~A01“ A2 A3 A4A1O
Operating Mode
PIN ' E Tit" RM IIO1 - l/08 POWER
MODE ' _
Read L L H DOUT IDDO
Write L A L DIN 'DDO
Output Deselect L H H High-Z broo
Standby H * . High-Z IDDS
* H or L
Maximum Ratings
SYMBOL ITEM RATING _ UNIT
VDD Power Supply Voltage -0.3 _ 7.0 V
VIN Input Voltage -0.3* - 7.0 V
Vuo Input and Output Voltage -0.5* - VDD + 0.5 V
PD Power Dissipation 1.0/0.8/0.6" W
TSOLDER Soldering Temperature . Time 260 . 10 °C . sec
TSTRG Storage Temperature -55 ' 150 °C
TopR Operating Temperature 0 - 70 =
* -3.0V with a pulse width of 50ns
" Package dependent: 0.6 inch 1.0W, 0.3 inch 0.8W, 0.45 inch 0.6W
A-34 TOSHIBA AMERICA ELECTRONIC COMPONENTS. me.
I: ”IDENEHB 00251.65 SSI ©
Static RAM TC55257BPLIBFL/BSPLIBFI'LIBTFIL-BSLHOL(LV)
DC Recommended Operating Conditions
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
VDD Power Supply Voltage 4.5 5.0 5.5
Ihr, Input High Voltage 2.2 _ v00 + 0.3 v
" Input Low Voltage _ -0.3' _ - 0.8
VDH Data Retention Supply Voltage 2.0 - 5.5
- -3.0V with a pulse width of 50ns
Dc Characteristics (Ta = 0 ~ 70°C, VDD = 5Vt10%)
SYMBOL PARAMETER TEST CONDITION _ MIN. TYP. MAX. UNIT
L Input Leakage Current VIN = t) ... VDD - - -+1.0 WA
Cri.=V orR/W=V orult'=V
l Out ut Leaka e Current IH IL IH - - $1.0
LO p g VOUT = 0 _ V00 . WA
10H ' Output High Current ' VOH = 2.4V -1.0 - - mA
kx Output Low Current VOL = 0.4V 4.0 - _ mA
Ci-i/w. tcycte=1l4s - 10 -
I _ W = "
DDOI Other Input = VIHNIL tcycle = Min. cycle - - 7O
IOUT = 0mA
Operating Current T JE = 0.2V t cycle = Ips - 5 ' - mA
RAN = VDD - 0.2V
IDDOZ Other Input .
_ = VDD - 0.2V/0.2V tcycle = Min. cycle - - q 60
‘OUT TT 0mA
bias, CE = VIH - - _ 3 mA
Standby Current C-E = Vor) .. 0.2V Ta = 0 - 70°C - - 30
'DDSZ VDD = 2.0V ... 5.5V Ta = 25°C - - 2 ”A
Capacitance* (Ta = 25°C, f = 1MHz)
SYMBOL PARAMETER TEST CONDITION V MAX. . UNIT
CIN Input Capacitance V.N = GND 10 F
COUT Output Capacitance VOUT = GND 10 p
"This parameter is periodically sampled and is not 100% tested.
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC. JV35
Cl “1097348 002':le LI‘IB Cl
TC55257BPL/BFUBSPLIBFI'L/BTRL-85Ll10L(LV) Static RAM
AC Characteristics (Ta = 0 - 70°C, VDD = 5Vi10%)
Read Cycle
I1055257BPL/BFL/BSPL/BFTL/BTBL
SYMBOL PARAMETER -85L(LV) -10L(LV) UNIT
MIN. MAX. . MIN. MAX.
tnc Read Cycle Time . 85 . - 100 -
tACC Address Access Time - 85 - 100
too E Access Time - 85 - 100
_ tos Output Enable to Output in Valid - 45 - 50
tCOE Chip Enable (E) to Output in Low-Z 10 - 10 - ns
tOEE Output Enable to Output in Low-Z 5 - 5 -
too Chip Enable (tTE) to Output in High-? - 30 - 50
tooo Output Enable to Output in High-Z - 30 - 40
tOH Output Data Hold Time 10 - 10 -
Write Cycle
T055257BPL/BFLIBSPL/BFTL/BTRL
SYMBOL PARAMETER -85L(LV) "1l1UL1l) UNIT
MIN. MAX. MIN. MAX.
two Write Cycle Time 85 - 100 -
twp Write Pulse Width 60 - 70 -
tow Chip Selection to End of Write 65 - 90 -
tas Address Setup Time 0 - 0 -
tWR Write Recovery Time 5 - _ 5 - ns
toow R/IN to Output in High-Z - 30 - 50
toew R/IN to Output in Low-Z 5 - 5 -
tos Data Setup Time 40. - 40 -
tDH Data Hold Time 0 - 0 -
AC Test Conditions
Input Pulse Levels 2.4V/0.6V _
Input Pulse Rise and Fall Time tins
Input Timing Measurement Reference Levels 2.2V/O.8V
Output Timing Measurement Reference Levels 2.2V/O.8V
Output Load 1 TTL Gate and Cr. = 100pF
A-36 TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
III 9097246 00251-6? 3iiltl cn
Static RAM TC55257BPL/BFLIBSPLIBFTL/BTRL-85u1OL(LV)
Timing Waveforms
Read Cycle ttl
ADDRESSES I )f, _ x
_ ' _ =t tacc 2- _ EQHV I
a i)irs, N, ' tco _ ' g5siiiEihijiiiE5iiiiiiiiii5EE :)iiiiiiiiiiiiiiii,
toe ----tstp--r----4
rsrsii1iii'?:iiii(! iiis,
UNKNOWN
Write Cycle 1 (4) (R/W Controlled Write)
ADDRESSES
cm DATA, STABLE
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC. A-37
III 9097296 Miilla188 BED El
TC55257BPL/BFLIBSPL/BFI'LIBTFIL-85lJ10L(LV) Static RAM
Write Cycle 2 (4) (E Controlled Write)
ADDRESSES
om . DATA STABLE
Notes:
1. R/W is high for read cycles.
2. If the E low transition occurs coincident with or after the R/W low transition, outputs remain in a high impedance
state. _
3. If the E high transition occurs coincident with or prior to the RAN high transition, outputs remain
in a high impedance state.
4. If 6? is high during a write cycle, the outputs are in a high impedance state during this period.
A-38 TOSHIBA AMEFHCA ELECTRONIC COMPONENTS. INC.
III 9097?.[46 UUEELB‘] IT'? ©
Data Retention Characteristics (Ta = 0 - 70°C)
Static RAM T055257BPLlBFL/BSPUBFI'LIBTFIL-BSLHOL(LV)
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
VDH Data Retention Supply Voltage 2.0 - 5.5 V
I Standb Current VDH = 3.OV - - 20 A
DDS2 7 y Va., = 5.5V - - 30 u
tcon Chip Deselect to Data Retention Mode 0 - -
tn Recovery Time tRCU) - -
Note (1): Read Cycle Time
Tiii Controlled Data Retention Mode
DATA RETENTION MODE
w. T""'"'' _ "i,
icon ;
Note (2): If the VIH otc-E is 2.2V in operation, Irons, current flows during the period that the VDD voltage is going down from 4.5V to 2.4V.
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
V00 - 0.2 V
. III “1897296 DDEELSU '31cl El
TC55257BPUBFUBSPUBFTUBTRL-85U1OL(LV) Static RAM
3V Operation
DC Recommended Operating Conditions
SYMBOL ' PARAMETER MIN. TYP, MAX. UNIT
VDD Power Supply Voltage 2.7 3.0 3.3
Ihr, Input High Voltage VDD - 0.2 - VDD + 0.3 V
VI. Input Low Voltage -O.3 - 0.2
Dc Characteristics (Ta = o ~ 70°C, Von = 3W10%)
SYMBOL PARAMETER TEST CONDITION . MIN. TYP. MAX. UNIT
L Input Leakage Current VIN = 0 ... VDD - - " $10 pA
T UE = V or R/W = V or '
I Out ut Leaka e Current -- 'H _ IL - - i1.0 A
LO p g OE = VIH, VOUT = 0 - VDD "
IOH Output High Current VOH = VDD - 0.2V -0.1 - - mA
kx Output Low Current VOL = 0.2V 0.1 - - mA
E = 0.2V T Min. - - 20
. R/W = Vor) - 0.2V
10002 Operating Current IOUT = 0m A tcycle Iris - _ 5 m/k
Other Inputs = VDD - 0.2V/0.2V
I Standb C rent tX v 0.2V Tho ' 70°C - [ - _ 20 A
u r = - .
DDS? y DD Ta = 25°C - . 1 2 "
Capacitance' (Ta = 25''C, r-- 1MHz)
SYMBOL PARAMETER TEST CONDITION MAX. UNIT
CIN Input Capacitance VIN = GND 10 F
Cour Output Capacitance VOQT = GND 10 p
'This parameter is periodically sampled and is not 100% tested.
A-40 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
III 9097396 [3021:1911 855 III
Static RAM TC55257BPL/BFIJBSPL/BFTLIBTRL-85L/1OL(LV)
3V Operation
DC Characteristics (Ta = 0 - 70°C, VDD = 3Vi10%)
Read Cycle .
SYMBOL PARAMETER MIN. MAX. UNIT
tRC Read Cycle Time 200 -
tACC Address Access Time - 200
too CE Access Time - 200
tOE Output Enable to Output in Valid - 100
tCOE Chip Enable (CE) to Output in Low-Z 10 - ns
tOEE Output Enable to Output in Low-Z 5 -
tcor) Chip Enable (UC) to Output in High-Z - 100
tODO Output Enable to Output in Highéz - 80
tOH Output Data Hold Time 10 -
Write Cycle
SYMBOL PARAMETER MIN. MAX. UNIT
two Write Cycle Time 200 -
twp Write Pulse Width 150 -
tow Chip Selection to End of Write 180 -
tAS Address Setup Time 0 -
twn Write Recovery Time 5 - ns
tODW RM to Output in High-Z - 100
tosv) RM to Output in Low-Z 5 -
tos Data Setup Time 90 -
tDH Data Hold Time 0 w
AC Test Conditions
Input Pulse Levels ' l/oo _ 0.2V/O.2V
Input Pulse Rise and Fall Time 5ns
Input Timing Measurement Reference Levels 1.5V
Output Timing Measurement Reference Levels 1.5V
Output Load CL = 100pF
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INc. A-41
Cl ‘llJ‘l'PELlB DDEbl‘lE '7nh III

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