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Home ›  TT10 > TC551001BFL70L-TC551001BFL-70L-TC551001BFL85L-TC551001BFL-85L-TC551001BFTL-70L-TC551001BFTL-85L-TC551001BPL-70L-TC551001BPL-85L,SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
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TC551001BFL70LTOSHIBAN/a6100avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-70L |TC551001BFL70LTOSHIBAN/a16000avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-70L |TC551001BFL70LTOSHN/a795avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-70L |TC551001BFL70LTOSN/a33avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-70L |TC551001BFL70LN/a17avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL85LTOSHIBAN/a400avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-85L |TC551001BFL85LTOSHIBAN/a5704avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-85L |TC551001BFL85LTOSN/a150avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-85L |TC551001BFL85LTOSHIBA ?N/a31avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFTL-70L |TC551001BFTL70LTOSHN/a142avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFTL-70L |TC551001BFTL70LTOSHIBAN/a8000avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFTL-85L |TC551001BFTL85LTOSHIBAN/a3596avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BPL-70L |TC551001BPL70LTOSHN/a200avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BPL-85L |TC551001BPL85LTOSHIBAN/a6100avaiSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM


TC551001BFL-70L ,SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM TOSHIBATC551001BPL/BFL/BFTL/BTRL-70L/ ..
TC551001BFL-70L ,SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAMfeatures with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is ..
TC551001BFL-70L ,SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM TOSHIBATC551001BPL/BFL/BFTL/BTRL-70L/ ..
TC551001BFL-70L ,SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAMFeatures• Low power dissipation: 27.5mW/MHz (typ.)• Standby current: 4m A (max.) at Ta = 25

TC551001BFL70L-TC551001BFL-70L-TC551001BFL85L-TC551001BFL-85L-TC551001BFTL-70L-TC551001BFTL-85L-TC551001BPL-70L-TC551001BPL-85L
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TOSHIBA
Features
Low power dissipation
27.5mW/MHz (typ.) Standby current: 4
A (max.) at Ta = 25 5V single power supply Access time (max.) Power down feature: CE1, CE2 Data retention supply voltage: 2.0 ~ 5.5V Inputs and outputs directly TTL compatible Package TC551001BPL : DIP32-P-600
TC551001BFL : SOP32-P-525
TC551001BFTL : TSOP32-P-0820
TC551001BTRL : TSOP32-P-0820A
Pin Connection (Top View)
SILICON GATE CMOS
131,072 WORD x 8 BIT STATIC RAM
Description

The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology,
and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an
operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is
placed in a low power standby mode in which the standby current is 2
A typically. The TC551001BPL has three control inputs.
Chip Enable inputs (CE1, CE2) allow for device selection and data retention control, while an Output Enable input (OE) provides fast
memory access. The TC551001BPL is suitable for use in microprocessor application systems where high speed, low power, and
battery backup are required.
The TC551001BPL is offered in a standard dual-in-line 32-pin plastic package, a small outline plastic package, and a thin small
outline plastic package (forward, reverse type).
Pin Names

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