TBB1004DMTL-EManufacturer: RENESAS Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier | |||
| Partnumber | Manufacturer | Quantity | Availability |
|---|---|---|---|
| TBB1004DMTL-E,TBB1004DMTLE | RENESAS | 3000 | In Stock |
Description and Introduction
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier **Manufacturer:** RENESAS  
**Part Number:** TBB1004DMTL-E   ### **Specifications:**   ### **Descriptions:**   ### **Features:**   This isolator is suitable for industrial, automotive, and communication applications requiring robust signal isolation. |
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| Partnumber | Manufacturer | Quantity | Availability |
| TBB1004DMTL-E,TBB1004DMTLE | HITACHI | 3000 | In Stock |
Description and Introduction
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier The part **TBB1004DMTL-E** is manufactured by **HITACHI**.  
### **Specifications:**   ### **Descriptions and Features:**   For further details, refer to the manufacturer's official documentation or datasheets. |
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| Partnumber | Manufacturer | Quantity | Availability |
| TBB1004DMTL-E,TBB1004DMTLE | HITACHI | 2800 | In Stock |
Description and Introduction
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier - **Manufacturer:** HITACHI  
- **Part Number:** TBB1004DMTL-E   - **Type:** Power MOSFET   - **Package:** TO-252 (DPAK)   - **Voltage Rating (VDS):** 40V   - **Current Rating (ID):** 100A   - **Power Dissipation (PD):** 150W   - **RDS(ON) (Max):** 2.5mΩ @ VGS = 10V   - **Gate Threshold Voltage (VGS(th)):** 1.0V (Min) – 2.5V (Max)   - **Operating Temperature Range:** -55°C to +175°C   - **Features:**     - Low on-resistance     - Fast switching speed     - High current handling capability     - Suitable for power management applications     - Lead-free and RoHS compliant   (Note: If additional specifications or verification is needed, refer to the official HITACHI datasheet.) |
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