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TBA331STN/a39avaiLINEAR INTEGRATED CIRCUIT


TBA331 ,LINEAR INTEGRATED CIRCUITS G S- THOMSON U7E I) rvsyri, DUMBO? Cl - "__- ---v ‘V -r-e--e-- -, am 17031 D TH3- -25 xj’f'” ..
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TBA331
LINEAR INTEGRATED CIRCUIT
S G S- THOMSON 07E I) I]EIEEIEB 001.130 'HI
C-C-rr-s-e- --- """" l 67C 17031 0 74’3 -25
'i") _,,il,r:-'si,'l" mm 15
.. - ___,'') LlhlEhRlhlTEfllWE0 CIRCUITS
GENERAL PURPOSE TRANSISTOR ARRAY
The TBA 331 is an array of 5 monolithic NPN transistors in a 14-lead dual in-line plastic package. Two
transistors are internally connected to form a differential amplifier.
The transistors of the TBA 331 are well suited to low noise general purpose and to a wide variety of
applications in low power systems in the DC through VHF range, They may be used as discrete compq-
nents in conventional circuits; in addition, they provide the very significant inherent integrated Circuit
advantages of close electrical and thermal matching.
ABSOLUTE MAXIMUM RATINGS
Each Total
transistor package
Vcao Collector-base voltage (ls = 0) 20 - V
CEO Collector-emitter voltage (le = 0) 15 - V
css* Collector-substrate voltage 20 - V
EBO Emitter-base voltage (lc = 0) . 5 - V
IC Collector current 50 - mA
Ptot Total power dissipation at Tamb < 55°C 300 750 mW
Tstg, T, Storage and junction temperature -40 to 150 ''C
Top Operating temperature 0 to 85 "C
' The collector of each transistor of the TBA 331 is isolated from the substrate by an integrated diode.
The substrate (pin 13) must be connected to the most negative point in the external circuit to main.
tain isolation between transistors and to provide for normal transistor action.
ORDERING NUMBER: TBA 331
MECHANICAL DATA Dimensions in mm
0‘51"“
33 5.1"“
0.45 . 254
6/82 2 9 70 ir- 1 1 432
S G S- THOMSON 07E I) U'FIE'HEBK DDLLBUB tur-
67C 1.7002 o-Tc-tre,-.. atr '',(ii'"i''",,'i":
' l ‘if; ' TBA331
SCHEMATIC DIAG RAM
2 1 5 l. 8 11 14
al t12 G3 t14 t15
3 . 6 7 9 10 12 13
S-3763 substrate
THERMAL DATA each Total
Rm J-amb Thermal resistanceiunction-ambient max 315°C/W 126°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max, Unit
logo Collector cutoff
current Ile = O) ch -- 10 V 0.002 40 nA
'CEO Collector cutoff
current (IS = 0) VCE = 10 V see 0,5 pA
"tu-lag Input offset
current k: = 1 mA
VCE = 3 V 0.3 2 PA
2971 B-lit 433
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