SUP85N06-05 ,N-Channel 60-V (D-S) 175C MOSFETS-20556—Rev. C, 22-Apr-022-3C – Capacitance (pF) g – Transconductance (S)fs I – Drain Current (A ..
SUP85N06-05 ,N-Channel 60-V (D-S) 175C MOSFETS-20556—Rev. C, 22-Apr-022-1SUP/SUB85N06-05New ProductVishay SiliconixSPECIFICATIONS (T =25C UNLES ..
SUP85N08-08 ,N-Channel 75-V (D-S) 175C MOSFET S-01884—Rev. B, 28-Aug-002-1SUP/SUB85N08-08New ProductVishay Siliconix
SUP85N06-05
N-Channel 60-V (D-S) 175C MOSFET
"ii=iir
VISHAY
SUP/SUB85N06-05
New Product
Vishay Siliconix
N-Channel 60-V (D-S) 175°C MOSFET
PRODUCT SUMMARY
V(BRmSSM rosmnusz) ID(A) o© . s52tst',' (5)
0.0052 @ VGS = 10 v 1 6 “G“o C.
60 l 85 a A m SO' t?
0.0072 @ VGS = 4.5 v “3130“ “G“ ks''''
't tft,'; ttt
TO-220AB
T0-263
Top IAew
DRAIN connected to TAB
H Ll H
TopWew
SUB85N06-05 S
N-Channel MOSFET
SUP85N06-05
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
Gate-Source Voltage VGs 120 V
TC = 2500 ct: 85a
Continuous Drain Current (TJ = 175°C) ID
Tc = 125°C 1853 A
Pulsed Drain Current IDM i240
Avalanche Current 'AR ck 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
' . . . b TC = 25°C (TO-220AB and TO-263) 250°
Maximum Power Dissipation TA = 25°C (TO-263)d PD 3.7 W
Operating Junction and Storage Temperature Range T J, Tsig -55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient . RNA
Free Air (TO-220AB) 62.5 "C/W
Junction-to-Case RthJC 0.6
a. Package limited.
b. Duty cycle 5 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 71113 www.vishay.com
S-20556-Rev. C, 22-Apr-02 2-1
SUP/SUB85N06-O5
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS ITa =25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, ID = 250 pA 60 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 0A 1 3
Gate-Body Leakage less VDS = O V, VGs = cl: 20 V i 100 nA
VDS=48V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS Vos = 48 V, VGs = 0 M TJ = 125°C 50 g/k
VDS=48V,VGS=0V,TJ=175°C 250
On-State Drain Currenta loam) VDS 2 5 V, VGS = 10 V 120 A
N/ss = 10 V, ID = 30 A 0.0044 0.0052
Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V b = 20 A 0.0059 0.0072 Q
VGS=1OV,ID=30A,TJ=125°C 0.0085
VGS=1ov,ID=30A,TJ=175°C 0.010
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 S
Dynamicb
Input Capacitance Ciss 7560
Output Capacitance Coss Ves = 0 V, Vos = 25 V, f= 1 MHz 1050 pF
Reverse Transfer Capacitance Crss 570
Total Gate Chargec Qg 155 220
Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 85 A 28 nC
Gate-Drain Chargec di 44
Turn-On Delay Time0 td(on) 15 25
Rise Timec tr VDD = 30 V, RL = 0.4 Q 90 130 ns
Turn-Off Delay TimeC two In E 85 A, VGEN = 10 V, R6 = 2.5 C2 95 140
Fall Timec tf 105 150
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls 75
Pulsed Current ISM 240 A
Forward Voltagea VSD IF = 85 A, VGS = 0 V 1.1 1.4 V
Reverse Recovery Time trr 50 85 ns
Peak Reverse Recovery Current IRWREC) IF = 85 A, di/dt = 100 Alps 2.7 5 A
Reverse Recovery Charge Qrr 0.067 0.21 11C
a. Pulsetest; pulse width 5 300 MS. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Document Number: 71113
S-20556-Rev. C, 22-Apr-02
VISHAY SUPlSUB85N06-05
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250 _ l 200
VGS =10thru 5V
200 160
Ci" iii..".
E 4 V E
S 150 g 120
o I ---" o ff
E /""'" .E
D 100 © 80
f f Tc = 125°C ///)
50 40 1 I
25°C I
3 v I \ -55''C
0 1 0 A 1
O 2 4 6 8 IO 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
250 I 1 0.008
Tc = -551
200 -,--''''''" 25°C a 0.006 VGS = 4.5 V
(ii'". iif
.,rs, 150 1/ 125°C - it' Ves=10V
g s...----""' tD 0 004
E (YC,.------'"""""'" me .
9, 100 l, I o
s f,,,",-''''''"
:9 P' il) 0.002
CD 50 =
0 0.000
0 20 40 60 80 100 0 20 4O 60 80 100 120
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
12000 20
10000 Ciss VGs = 30 V
E 16 - ID = 85 A
sry.. 8000 ir,'
8 > 12
'ti 6000 US)
I 4000 m
o ( C?
Cass '"
2000 :8 4
0 rss 0
O 6 12 18 24 30 0 60 120 180 240 300
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 71113 www.vishay.com
S-20556-Rev. C, 22-Apr-02 2-3
SUP/SUB85N06-O5
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 I _ I 100
VGS = 10 V
ID = 85 A 'e,,.,,.,-''''''''
Cpl" 1 5 // A
'l' / ff:
I'',-'; lj" ""' E
t? E 1 o m 10
c t, L'
C) E w,,,,--''" g
E" / I
a 0.5 fo
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
TJ - Junction Temperature (°C) Vsro - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Avalanche Current vs. Time Junction Temperature
1000 80
w--''''"
0 ID = 250 “A "..-"'
100 UN (A) @ TA = 25 C 70
E s,,,,,..--'''''"
Iii" g r,,,,,,.,---'''''"''"
a ii? wrr''"
o 10 ' 60
IAV (A) @ TA =150°C
0.1 40
00001 0.001 0.01 0.1 1 -50 -25 0 25 50 75 100 125 150 175
tin (Sec) T J - Junction Temperature (°C)
www.vishay.com Document Number: 71113
2.4 S-20556-Rev. C, 22-Apr-02
VISHAY SUP/SUB85N06-05
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature Safe Operating Area
100 1000
80 h "
ii.:.". ii:.]
- - Limited
C2 60 '
g g by rDS(on)
a 8 10
5 40 5
20 1 TC = zsuc
Single Pulse
O 25 50 75 100 125 150 175 0.1 1 10 100
TC - Ambient Temperature CC) I/tos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle - 0.5
tO o 0.2
15,' g 0.1
t - 0.1
Single Pulse
IO-A 10-3 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
Document Number: 71113 www.vishay.com
S-20556-Rev. C, 22-Apr-02 2-5
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