SUP75N08-10 ,N-Channel Enhancement-Mode Trans FaxBack 408-970-5600S-57253—Rev. B, 24-Feb-982-1SUP/SUB75N08-10Vishay SiliconixSpecifications (T ..
SUP75N08-10 ,N-Channel Enhancement-Mode Trans FaxBack 408-970-5600S-57253—Rev. B, 24-Feb-982-3C – Capacitance (pF) g – Transconductance (S) ..
SUP75P05-08 ,P-Channel 55-V (D-S) 175C MOSFETSUP/SUB75P05-08New ProductVishay SiliconixP-Channel 55-V (D-S), 175C MOSFET
SUB75N08-10-SUP75N08-10
N-Channel Enhancement-Mode Trans
SUP/SUB75N08-10
Vishay Siliconix
VISHAY
N-Channel 75-v (D-S), 17500 MOSFET
PRODUCT SUMMARY axew‘e
V(BR)DSS (V) rDSion) (Q) ID (A) 06 1ile'd; ttN" (5)
75 0.010 75a A1 6 "icsst' Qg
TO-220AB eo
TO-263
DRAIN connected to TAB H Ll H
Top View
G D S S
SUB75N08-10
Top View
SUP75N08-10 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Gate-Source Voltage N/ss i 20 V
Continuous Drain Current TC = 2500 lr, 75a
(To = 175 C) TC =125"C 55
Pulsed Drain Current IBM 240
Avalanche Current IAR 60
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 ml
Tc = 25°C (TO-220AB and TOde) 1870
Power Dissipation PD W
TA = 25°C (TO-263)d 3.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient RNA
Free Air (TO-220AB) 62.5 ''CAN
Junction-to-Case RthJC 0.8
a. Package limited.
b. Duty cycle s; 1%.
c. See SOA curve for voltage derating.
d When mounted on l" square PCB (FR-4 material).
Document Number: 70263 www.vishay.com . FaxBack 408-970-5600
S-57253-Reu B, 24-Feb-98 2-1
SUPlSUB75N08-10
Vishay Siliconix
VISHAY
Specifications (T J = 25°C Unless Otherwise Noted)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 “A 75 V
Gate Threshold Voltage VGS(th) VDs = Vss, ID = 250 “A 2.0 3.5 4.5
Gate-Body Leakage less Vos = 0 V, VGS = 120 V :t 100 nA
VDS=75V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS Vros = 75 V, VGS = 0 V, TJ = 125°C 50 WA
1/Ds=75V,VGs--0V,TJ= 175°C 150
On-State Drain Currenta low") VDS = 5 V, VGS = 10 V 120 A
N/ss = 10 V, ID = 30 A 0.0087 0.010
Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, T: = 125°C 0.017 Q
VGs=10V,lD=30A,TJ= 175°C 0.021
Forward Transconductancea gfs VDs = 15 V, ID = 30 A 30 s
Dynamic''
Input Capacitance Ciss 4800
Output Capacitance Coss VGS = 0 V, Vos = 25 V, f= 1 MHz 910 pF
Reverse Transfer Capacitance Crss 270
Total Gate Chargec Q9 85 120
Gate-Source ChargeC Qgs VDS = 30 V, VGS = 10 V, ID = 75 A 31 nC
Gate-Drain ChargeC di 24
Turn-On Delay Timec tam") 20 40
Rise Timec tr VDD = 30 V, RL = 0.47 C2 95 200 ns
Turn-Off Delay Tlmec tum“) lo E 75 A, VGEN = 10 V, Rs = 2.5 Q 65 120
Fall Timec if 20 60
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls 75
Pulsed Current ISM 240 A
Forward Voltagea VSD IF = 75 A , VGS = O V 1.0 1.3 V
Reverse Recovery Time In 80 120 ns
Peak Reverse Recovery Current IRWREC) IF = 75 A, di/dt = 100 Alps 7 9 A
Reverse Recovery Charge Qrr 0.28 0.54 ”0
a. Pulse test: pulse width s; 300 usec, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 70263
2-2 S-57253-Rev. B, 24-Feb-98
VISHAY
SUP/SUB75N08-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
I D — Drain Current (A)
9 fs — Transconductance
C — Capacitance (pF)
Output Characteristics
250 I " I
V = 10 V I
GS Pls,,,, 9 V
200 , V
150 ?"
4 V 5 V
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Transconductance
100 TC = -55 C r“ -
we''''''''" 25°C
80 o,,p''"
//'"'''''"rl, 1251
60 (jf,,,-----'"""-
0 20 4O 60 80 100
VGS - Gate-to-Source Voltage (V)
Capacitance
0 10 20 30 40 50 60
Vos - Drain-to-Source Voltage (V)
| D — Drain Current (A)
rDS(on) — On-Resistance( Q )
VGs — Gate-to-Source Voltage (V)
Transfer Characteristics
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS=1OV ----
VGS = 20 V
0 20 4O 60 80 100
ID - Drain Current(A)
Gate Charge
V = 30V
- |DD=S75A //
12 /'''''
',w'''''
0 25 50 75 100 125 150 175
09 - Total Gate Charge (nC)
Document Number: 70263
S-57253-Reu B, 24-Feb-98
www.vishay.com . FaxBack 408-970-5600
SUPlSUB75N08-10
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 30 A
A 2.0 /
v ,,,,,i'''' s.
8 "P' E
g G' 1.5 g
.3? E " E 10
C 2 1 o g
, v . w
5, s,,,,,,-'''''' tD
-50 -25 0 25 5O 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
TJ - Junction TemperatureCC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
v .C T m r r .
100 s ase e pe atu e 500 Safe Operating Area
80 100 IO IIS
'ig" 'ss Ct 100 11s
E 60 'N. E
m "N tD
bc t 10
a "ss, 8 1 ms
5 40 t5
I I 10 ms
- - 1 100 ms
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature CC)
Normalized Effective Transient
Thermal Impedance
10-5 10-4 1o-3
Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
1 0-2 10-1 1 3
Square Wave Pulse Duration (sec)
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Document Number: 70263
S-57253-Rev. B, 24-Feb-98
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