IC Phoenix
 
Home ›  SS113 > SUB75N08-09L-SUP75N08-09L,N-Channel 75-V (D-S) 175C MOSFET
SUB75N08-09L-SUP75N08-09L Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
SUB75N08-09L |SUB75N0809LVISN/a800avaiN-Channel 75-V (D-S) 175C MOSFET
SUP75N08-09L |SUP75N0809LVISHAYN/a10avaiN-Channel 75-V (D-S) 175C MOSFET


SUB75N08-09L ,N-Channel 75-V (D-S) 175C MOSFETSUP/SUB75N08-09LNew ProductVishay SiliconixN-Channel 75-V (D-S), 175C MOSFET 

SUB75N08-09L-SUP75N08-09L
N-Channel 75-V (D-S) 175C MOSFET
SUP/SUB75N08-09L
VISHAY
New Product Vishay Siliconix
N-Channel 75-v (D-S), 1750c MOSFET
PRODUCT SUMMARY aie,t,5'iri"
V DO IgA' (5)
(BR)DSS (V) I'DS(on) (C2) ID (A) 1 6 isis'' '
75 0.009@Vss=101/ i753 l . s"ssoW , s
0.011 @ VGS = 4.5 v “313‘“ gsit? 09¢“
4 tt,',5 w
T0-220AB D
TO-263
DRAIN connected to TAB
H Ll H
Top View
G D s s
SUB75N08-09L
Top View
SUP75N08-09L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V93 75
Gate-Source Voltage VGs l 20 V
To = 25°C 1 75a
Continuous Drain Current (T J = 175°C) ID
TC = 125°C d: 66 A
Pulsed Drain Current bs, i 240
Avalanche Current [AR l 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
' . . . TC = 25°C (TO-220AB and TO-263) 250c
Maximum Power Dissipation' PD W
TA = 25°C (TO-263)d 3.7
Operating Junction and Storage Temperature Range Ts, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient RWA
Free Air (TO-220AB) 62.5 aCNV
Junction-to-Case Rthoc 0.6
a. Package limited.
b. Duty cycle 5 1%.
c. See SOA curve for voltage derating.
d. When mounted on l" square PCB (FR-4 material).
Document Number: 70870 www.vishay.com . FaxBack 408-970-5600
S-60951-Rev, A, 26-Apr-99 2-1
SUP/SUB75N08-09L
VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa =25°c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, ID = 250 0A 75 V
Gate-Threshold Voltage Vegan) VDS = VGS, ID = 250 WA 1 3
Gate-Body Leakage less Vos = 0 V, VGS = cl: 20 V d: 100 nA
VDs=60V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDS = 60 V, VGS = 0 V, TJ = 125°C 50 WA
VDS = 60 V, I/ss = 0 V, To = 175°C 250
On-State Drain Currenta loam) Vos 2 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.0076 0.009
VGS=4.5 V, ID: 20A 0.011
Drain-Source On-State Resistance" roam) Q
VGS=10V.ID=30A.TJ=125°C 0.016
VGS=10V,|D=3OA,TJ=175°C 0.021
Forward Transconductancea gts Vos = 15 V, ID = 30 A 30 S
Dynamicb
Input Capacitance Ciss 5600
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f= 1 MHz 820 pF
Reverse Transfer Capacitance Crss 275
Total Gate Chargec Qg 121 150
Gate-Source ChargeC Qgs VDs = 30 V, VGs = 10 V, b = 75 A 20 n0
Gate-Drain Chargec di 25
Turn-On Delay Timec tuom 11 20
Rise Timec t, VDD = 30 V, RL = 0.47 Q 10 20 ns
Turn-Off Delay Time0 tum“) lo E 75 A, VGEN = 10 V, Rs = 2.5 Q 107 200
Fall TimeC tf 22 40
Source-Drain Diode Ratings and Characteristics (Tc = 25"C)b
Continuous Current Is 75
Pulsed Current ISM 240
Forward Voltage" VSD IF = 75 A, VGS = O V 1.0 1.3 V
Reverse Recovery Time trr 80 120 ns
Peak Reverse Recovery Current IRWREC) IF = 75 A, mm = 100 Alps 4 9 A
Reverse Recovery Charge Qrr 0.32 0.54 wc
a. Pulse test; pulse width 5 300 us. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.c0m . FaxBack 408-970-5600 Document Number: 70870
2-2 S-60951-Rev. A, 26-Apr-99
VISHAY
New Product
SUP/SUB?))
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
v65: 10, 9, 8, 7, 6, 5V
3‘; / 4 v
Cl 100
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Transconductance
TC = -55''C
<7) r.,-,-"'''" 25°C
i,; s,,,,-'''''''''
E 120 f "-''" 125°C
g /(rCC.',',,'
g ',,,,w''"
1: [Y''
0 20 40 60 80 100
VGS - Gate-to-Source Voltage (V)
Capacitance
7500 O
Irs 6000 L
IT, 4500
I 3000
's-..,,..,......, Crss
0 15 30 45 60 75
VDS - Drain-to-Source Voltage (V)
ID — Drain Current(A)
rDS(on) — On-Resistance ( 32)
V33 — Gate—to-Source Voltage (V)
Transfer Characteristics
160 I /
Tc = 125°C
25°C /
'z,,,t/, -55''C
0 j! l
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.010 - VGs = 4.5 V s.,.,,,,,,.-----''''""
s..---"'"' v 10 v
a.---''"' GS -
0 20 40 60 80 100 120
ID - Drain Current (A)
Gate Charge
VGS = 30V
8- ID=75A p,,W''"
4 ",,p'''''
0 20 40 60 80 100 120
Qg - Total Gate Charge (nC)
Document Number: 70870
S-60951-Rev, A, 26-Apr-99
www.vishay.com . FaxBack 408-970-5600
SUP/SUB75N08-09L
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
VGS=10V
ID=75A
1.5 4/
rDS(on) — On—ReSIstance (S2)
(Normallzed)
Is — Source Current (A)
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature(°C)
Avalanche Current vs. Time
IAV (A) @ Tu = 25°C
I Dav (a)
\(BR)DSS (V)
|AV(A)@TJ=150°C
0.0001 0.001 0.01 0.1 1
tin (Sec)
Source-Drain Diode Forward Voltage
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Drain-Source Breakdown Voltage vs.
Junction Temperature
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction TemperatureCC)
www.vishay.com . FaxBack 408-970-5600
Document Number: 70870
S-60951-Rev. A, 26-Apr-99
VISHAY SUP/SUB75N08 09L
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs. .
Case Temperature Safe Operating Area
90 300
Limited 10 us
75 "N, by rDS(on
100 100 us
cg 60 \ cg
8 45 8 1 us
I 30 l 10
E l E 10 ms
Tc = 25°C
15 Single Pulse 100 ms
0 25 50 75 100 125 150 175 0.1 1 10 100
Tc - Ambient Temperature CC) VDs - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = os
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-5 10-4 10-3 10-2 10-1 1 3
Square Wave Pulse Duration (sec)
Document Number: 70870 www.vishay.com . FaxBack 408-970-5600
S-60951-Rev, A, 26-Apr-99 2-5
:
www.loq.com
.
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED