SUB75N05-07 ,N-Channel 55-V (D-S) 175C MOSFET FaxBack 408-970-5600S-60952—Rev. A, 19-Apr-992-1SUP/SUB75N05-07New ProductVishay Siliconix ..
SUB75N06-08 ,N-Channel Enhancement-Mode Trans S-05111—Rev. F, 10-Dec-012-1SUP/SUB75N06-08Vishay Siliconix ..
SUB75N08-09L ,N-Channel 75-V (D-S) 175C MOSFETSUP/SUB75N08-09LNew ProductVishay SiliconixN-Channel 75-V (D-S), 175C MOSFET
SUB75N05-07-SUP75N05-07
N-Channel 55-V (D-S) 175C MOSFET
VISHAY
SUP/SUB75N05-07
New Product
Vishay Siliconix
N-Channel 55-v (D-S), 17500 MOSFET
PRODUCT SUMMARY
V(BR)Dss (V) rI3S(on) (C2) ID (A)
55 0.007@Vss=10V i753
0.009 @ VGS = 4.5 V
TO-220AB
TO-263
DRAIN connected to TAB
Top View
SUB75N05-07
Top View
SUP75N05-07
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 55
Gate-Source Voltage Was l 20 V
To = 25°C 1 75a
Continuous Drain Current (TJ = 175°C) ID
TC = 125''C i 60 A
Pulsed Drain Current IDM cl: 240
Avalanche Current [AR l 60
Repetitive Avalanche Energyb L = 0.1 mH EAR 180 mJ
Tc = 25°C (TO-220AB and TO-263) 1580
Maximum Power Dissipation PD W
TA = 25°C (TO-263)d 3.7
Operating Junction and Storage Temperature Range Ts, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient RthJA
Free Air (TO-220AB) 62.5 °CNV
Junction-to-Case Rthoc 0.95
a. Package limited.
b. Duty cycle 5 1%.
c. See SOA curve for voltage derating.
d. When mounted on l" square PCB (FR-4 material).
DocumentNumber: 70871
S-60952-Rev, A, 19-Apr-99
www.vishay.com . FaxBack 408-970-5600
SUP/SUB75N05-O7
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS ITa =25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, ID = 250 pA 55 V
Gate-Threshold Voltage Vegan) VDS = VGS, ID = 250 WA 1 3
Gate-Body Leakage less Vos = 0 V, VGS = cl: 20 V d: 100 nA
VDs=44V,VGS=OV 1
Zero Gate Voltage Drain Current IDSS VDS = 44 V, VGS = 0 V, TJ = 125°C 50 WA
VDS = 44 V, I/ss = 0 V, To = 175°C 250
On-State Drain Currenta loam) Vos 2 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.0056 0.007
Drain-Source On-State Resistance" rDS(0n) VGS = 4.5 V, ID = 20 A 0.0072 0.009 Q
VGS=10V.ID=30A.TJ=125°C 0.011
VGS=10V,|D=3OA,TJ=175°C 0.015
Forward Transconductancea gts Vos = 15 V, ID = 30 A 40 S
Dynamicb
Input Capacitance Ciss 6830
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f= 1 MHz 720 pF
Reverse Transfer Capacitance Crss 350
Total Gate Chargec Qg 135 170
Gate-Source ChargeC Qgs VDs = 30 V, VGs = 10 V, b = 75 A 25 n0
Gate-Drain Chargec di 34
Turn-On Delay Timec tuom 13 20
Rise Timec t, VDD = 30 V, RL = 0.47 Q 11 20 ns
Turn-Off Delay Time0 tdmff) lo E 75 A, VGEN = 10 V, Rs = 2.5 Q 90 160
Fall TimeC tf 25 40
Source-drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current Is 75
Pulsed Current ISM 240 A
Forward Voltage" VSD IF = 75 A, VGS = O V 1.0 1.3 V
Reverse Recovery Time trr 45 80 ns
Peak Reverse Recovery Current IRWREC) IF = 75 A, di/dt = 100 Alps 2 5 A
Reverse Recovery Charge Qrr 0.09 0.4 wc
a. Pulse test; pulse width 5 300 us. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600
Document Number: 70871
S-60952-Rev. A, 19-Apr-99
VISHAY
SUP/SUB75N05-07
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
250 l l
ff Vss=5thru10V
I 100 4V
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Transconductance
T = - Ct
180 C 55 C
g.". 150
0 20 40 60 80 100
VGS - Gate-to-Source Voltage (V)
Capacitance
8000 Ciss
sfi.L.
8 6000
8 4000
2000 Crss
JC......., Coss
0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V)
In — Drain Current(A)
rDS(on) — On—Resistance ( Q)
Ves — Gate-to—Source Voltage (V)
Transfer Characteristics
To = 125°C ?
I "tsd -55l
0 1 2 3 4 5
VGS - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current
0.010 I
VGS = 4.5 V
0.008 . --'""
----"""
---" VGS = 10 V
0 20 40 60 80 100
ID - Drain Current (A)
Gate Charge
VGS = 30 v /
8 - ID = 75 A pr
0 20 40 60 80 100 120 140
Qg - Total Gate Charge (nC)
DocumentNumber: 70871
S-60952-Rev, A, 19-Apr-99
www.vishay.com . FaxBack 408-970-5600
SUPISUB75N05-07
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 75 A
A 2 0 I T: = 150°C
9 ri'''" A
a.) ,,,,w'''''
.e :3 . V t
g a " o 10
a F, / 5
O E 1.0 8
J) oe''' 2
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
T J - Junction Temperature(°C) VSD - Source-to-Drain Voltage(V)
Drain-Source Breakdown vs.
Avalanche Current vs. Time Junction Temperature
300 80
w (A) @ To = 25°C 3 s,,,,,,,,---''''''''''''''
A m --'''''"
m w w,--'''''''
V 9 m.-'''''"
g E 60 w..---''''''''''''"
- 10 N w,,,,,,,.,-"-''''''''''"
IAV (A) @ To = 150°C
0.0001 0001 0.01 0.1 1 -50 -25 0 25 50 75 100 125 150 175
tin (Sec) T J - Junction TemperatureCC)
www.vishay.com . FaxBack 408-970-5600 Document Number: 70871
b4 S-60952-Rev. A, 19-Apr-99
VISHAY
SUP/SUB75N05-07
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs. .
Case Temperature Safe Operating Area
, Limited
by r on)
60 100
s "Ci"
8 40 L ,
t5 til 10
- 20 TC = 25°C
Single Pulse
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
0.1 1 10 100
VDS - Drain-to-Source Voltage(V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-5 10-4 10-3
10-2 IO-l 1 3
Square Wave Pulse Duration (sec)
DocumentNumber: 70871
S-60952-Rev, A, 19-Apr-99
www.vishay.com . FaxBack 408-970-5600
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