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SUB70N03-09BP-SUP70N03-09BP
N-Channel 30-V (D-S) 175C MOSFET PWM Optimized
VISHAY
New Product
SUPlSUB70N03-09BP
Vishay Siliconix
N-Channel 30-V (D-S), 175°C, MOSFET PWM Optimized
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (Q) ID (A)
30 0.009 @ N/ss = 10 v 70a
0013@sz= 4.5V 60
TO-220AB
O TO-263
DRAIN connected to TAB H U H
Top Mew
Top Mew
SUP70N03-09BP
SUB70N03-09BP
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS ce 20
TC = 25°C 7Ob
Continuous Drain Current (To = 175°C) ID
Tc = 100°C 50
Pulsed Drain Current IBM 200
Avalanche Current IAR 30
Repetitive Avalanche Energya L = 0.1 mH EAR 61 mJ
Power Dissipation TC = 25°C PD 93b W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)c 40
Junction-to-Ambient ' RthJA
Free Air (TO-220AB) 62.5 ''C/W
Junction-to-Case RthJC 1.6
Notes:
a. Duty cycle S 1%.
b. See SOA curve for voltage derating.
c. When mounted on l" square PCB (FR-4 material).
Document Number: 71229
S-20102-Rev. B, 11-Mar-02
www.vishay.com
Vishay Siliconix New Product
MOSFET SPECIFICATIONS ITU =25°c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)Dss VGS = 0 V, ID = 250 " 30
Gate Threshold Voltage Vegan) VDs = I/ss, IDs = 250 WA 0.8 2.0
Gate-Body Leakage Isss 1/ros = 0 V, VGS = i 20 V i 100 nA
Vros=24V,VGs=0V 1
Zero Gate Voltage Drain Current Iross VDs = 24 V, VGs = 0 V, TJ = 125°C 50 IIA
v03: 24V.VGS=0V,TJ=175°C 150
On-State Drain Currenta b(on) VDS = 5 V, VGS = 10 V 70 A
VGS = 10 V, ID = 30 A 0.007 0.009
VGS=10V,|D= 3OA,TJ=125°C 0.0135
Drain-Source On-State Resistancea rDs(on) Q
VG5=1OV,ID= 30A, TJ=175°C 0.017
VGS=4.5V, ID: 20A 0.010 0.013
Forward Transconductancea gfs Vros = 15 V, ID = 30 A 20 45 S
Dynamicb
Input Capacitance Ciss 1500
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f= 1 MHz 530 pF
Reversen Transfer Capacitance Crss 240
Total Gate ChargeC Qg 15.5 19
Gate-Source ChargeC Q95 N/rss = 15 V, Vss = 5 V, ID = 70A 5 nC
Gate-Drain ChargeC di 6
Turn-On Delay Timec td(on) 10 18
Rise Timec tr VDD = 15 V, RL = 0.21 Q 8 15 ns
Turn-Off Delay Timec td(off) ID = 70 A, VGEN = 10 V, Rs = 2.5 Q 25 45
Fall Ttmet' If 9 16
Gate Resistance R9 2 Q
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current Is 70
Pulsed Current ISM 200
Forward Voltagea VSD IF = 70 A, VGs = 0 V 1.1 1.5 V
Reverse Recovery Time trr IF = 70 A, di/dt = 100 A/gs 30 60 ns
Notes:
a. Pulsetest; pulse width 5 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com Document Number: 71229
2 S-20102-Reu. B, 11-Mar-02
VISHAY SUP/SUB70N03-09BP
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
200 _ l 200
/ VG3=1Othru6V /j'
160 / l To = 755°C /
5 V 150
pe- 1 o _
A A 25 C
G. tt.. \
E 120 E
o 4 V 0 100 V 125°C -
E 80 /" E
o 3 V o 50
- 4O - tr
I, 2 V
o f o 4
O 2 4 6 8 IO 0 1 2 3 4 5 6
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
100 0.025
To = -55l /
80 A 0.020
8 / 25°C g
g 60 1 g 0.015 "
g s-.''"""" 125°C 8 N/ss = 4.5 v r,,,,--'''"
8 /' o
m 40 0.010 V68: 10V g
m 20 .9 0.005
0 0.000
0 20 40 60 80 100 120 0 20 40 60 80 100 120
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
2400 10 //''
2000 VDS = 15 V
f..? 8 - ID = 70 A /
C? Ciss g
8- 1600 g
tD > 6
o5. 'g'
'6 1200 o
'l 800 l \ Coss ii. 4 pr
o 's-i,?.'.''.'.'.... (D '
Crss I 2 y'"
400 _ o
a.---, >
0 6 12 18 24 30 0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 71229 www.vishay.com
S-20102-Rev. B, 11-Mar-02 3
SUPlSUB70N03-09BP
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
VGS = 10 V
ID = 30 A
g A " E T J" 150°C
I-',. 'i' 1.2 / g
8 "t-T, "-''' <3
5 g e,,.-'''' 8
O ii. 0.8 / E
sc,?, m
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
T J - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
Drain-Source Voltage Breakdown
vs. Junction Temperature
ID = 250 WA
o,,,.,,,,--''""
ss..?.. s,,,,,--''''''
co ---''''
a 35 r
> ---''
-50 -25 0 25 50 75 100 125 150 175
Ts - Junction Temperature (°C)
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DocumentNumber: 71229
4 S-20102-Reu. B, 11-Mar-02
"ii=iir
VISHAY
New Product
SUP/SUB70N03-09BP
Vishay Siliconix
THERMAL RATINGS
ii.:.".
Normalized Effective Transient
Thermal Impedance
Maximum Drain Current vs.
Case Temperature
ID — Drain Current (A)
25 50 75 100 125 150 175
Tc - Case Temperature (°C)
Safe Operating Area
by, r on)
1 10 100
VDs - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Single Pulse
0.001 0.01
Square Wave Pulse Duration (sec)
10 100
Document Number: 71229
S-20102-Rev. B, 11-Mar-02
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