SUB60N06-18 ,N-Channel Enhancement-Mode Trans FaxBack 408-970-5600S–57253—Rev. D, 24-Feb-982-1SUP/SUB60N06-18Vishay Siliconix
SUB60N06-18-SUP60N06-18
N-Channel Enhancement-Mode Trans
VISHAY
SUPISUB60N06-18
Vishay Siliconix
N-Channel 60-V (D-S), 175°C MOSFET
PRODUCT SUMMARY 06 tft,),':?: (5)
V(BR)DSS (V) rDS(on) (Q) ID (A) A16 Csstssl §@
60 0.018 60 “313‘“ ‘“ ott' (9‘5
'k"tt,t,),To'
TO-220AB eo
T0-263
DRAIN connected to TAB G oJ
H Ll H
G D s G D s
Top View
Top View S
SUP60N06-18 SUB60N06-18 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vros 60
Gate-Source Voltage VGS :20
TC = 25°C 60
Continuous Drain Current (TJ = 175°C) ID
Tc = 100°C 39
Pulsed Drain Current IBM 120
Avalanche Current IAR 6O
Repetitive Avalanche Energya L = 0.1 mH EAR 180 mJ
Tc = 25°C (TO-220AB and TO-263) 120b
Power Dissipation PD W
TA = 25''C (TO-263)c 3.7
Operating Junction and Storage Temperature Range Ts Tstg -55 to 175 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)c 40
Junction-to-Ambient RNA
Free Air (TO-220AB) 62.5 °CNV
Junction-to-Case Rthoc 1.25
Notes:
a. Duty cycle s 1%.
b. See SOA curve for voltage derating,
C. When mounted on I" square PCB (FR-4 material).
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Document Number: 70290
S-57253-Rev. D, 24-Feb-98
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SUP/SUBGON06-18
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 WA 60
Gate Threshold Voltage Vegan) VDS = VGS, IDS = 1 mA 2.0 4.0 V
Gate-Body Leakage less VDS = 0 V, VGS = 120 V i 100 nA
v.35: 60V,VGS=OV 1
Zero Gate Voltage Drain Current Iross VDs = 60 V, VGS = O V, T: = 125°C 50 11A
v03: 60V,VGs=0V,Tc=175''C 150
On-State Drain Currents low”) Vros = 5 V, VGS = 10 V 60 A
VGS=1OV,ID= 30A 0.014 0.018
Drain-Source On-State Resistancea rDS(on) Vss = 10 v, ID = 30 A, T J = 125°C 0.024 0.030 Q
VCs-- 10 V, I0: 30 A, TJ = 175°C 0.031 0.036
Forward Transconductancea gts Vos = 15 V, b = 30 A 49 S
Dynamicb
Input Capacitance Ciss 2000
Output Capacitance Coss N/ss = 0 V, Vros = 25 V, f= 1 MHz 400 pF
Reversen Transfer Capacitance Crss 115
Total Gate ChargeC Q9 39 60
Gate-Source Chargec Qgs VDs = 30 V, VGS = 10 V, ID = 60 A 12 nC
Gate-Drain Chargec di 10
Turn-On Delay Timec td(on) 12 30
Rise 'I'Imec t, VDD = 30 V, RL = 0.5 Q 11 30 ns
Turn-Ott Delay Timec td(0ff) ID = 60 A, VGEN = 10 V, Rs = 2.5 Q 25 50
Fall Timec tf 15 30
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current l, 60
Pulsed Current ISM 120 A
Forward Voltagea VSD IF = 60 A, VGS = 0 V 1.6 V
Reverse Recovery Time trr 60 ns
Peak Reverse Recovery Current IRWREC) IF = 60 A, dildt = 100 Alps 6.0 A
Reverse Recovery Charge Qrr 0.4 11C
Notes:
a. Pulse test; pulse width s 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Document Number: 70290
S-57253-Rev. D, 24-Feb-98
VISHAY
SUPISUB60NO6-18
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
/ Vss=10,9,8,7V
Cd.'. 6 v
is 50 /
0 2 4 6 8 10
I/os - Drain-to-Source Voltage(V)
Transconductance
To = -55'C
9 f5 — Transconductance (S)
0 10 20 30 40 50
VGS - Gate-to-Source Voltage (V)
Capacitance
2500 (
“g, 2000
IT, 1500
I 1000
500 Crss "''s,,
0 IO 20 30 40
VDS - Drain-to-Source Voltage (V)
| D — Drain Current (A)
rDS(on) — On-Resistance( Q )
VGs — Gate-to-Source Voltage (V)
Transfer Characteristics
TC = 125°C
25oC /
"ed -551
0 2 4 6 8 10
Vss - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 10 V s....,.,,---''''""
0 20 40 60 80 100
ID - Drain Current(A)
Gate Charge
V68 = 10 V
8 - ID = 60 A f
6 s,,,,/''''
0 10 20 30 40
Q9 - Total Gate Charge (nC)
Document Number: 70290
S-57253-Rev. D, 24-Feb-98
www.vishay.com . FaxBack 408-970-5600
SUP/SUBGON06-18
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.4 I I 100
VGS = 10 V o,,ps'''
2.0 ID = 30 A
Cl s,,,,,,,,'''''' A
8 1.6 w'''' i7
g G" w,,-''''' “é
27, 'tli 3
a = / o
a; m 1.2 r m 10
“F E ',-''" L'
O E, / J?
L 0.8 ,1 I
s'tizr ""' <0
-50 -25 0 25 5O 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature(°C) I/sro - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
70 200
60 100 “S
"s, M5
:5 "s, sr
it' 40 'trc if 10
s 'N 5 ms
0 "s, o
o 0 ms
E 20 E 1 ms
O 20 40 60 80 100 120 140 160 180 0.1 1 10 100
Tc - Case Temperature (°C)
Vos - Drain-to-Source Voltage(V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
10-5 104 10-3
10-2 10-1 1 3
Square Wave Pulse Duration (sec)
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Document Number: 70290
S-57253-Rev. D, 24-Feb-98
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