SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level
SUB15P01-52-SUP15P01-52
P-Channel 8-V (D-S) 175C MOSFET
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VISHAY
SUP/SUB15P01-52
Vishay Siliconix
P-Channel 8-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.052 @ VGS = -4.5 v -15
-8 0.070 @ VGS = -2.5 v -10
0.105@sz= -1.8 v -10,5
TO-220AB
O TO-263
DRAIN connected to TAB
TopMew
B15P01-52
TopMew SU 5 0 5
SUP15PO1-52
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -8
Gate-Source Voltage VGS i 8
Continuous Drain Current TC = 25°C I -15
(TJ =175°C) Tc =125°C D -8.7
Pulsed Drain Current 'DM -25
Avalanche Current IAR -1 0
Repetitive Avalanche Energyb L = 0.1 mH EAR 5 ml
TC = 25°C (TO-220AB and TO-263) 25d
Power Dissi ation P W
p TA = 25°C (TO-263)C D 2.1
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Junction-to-Ambient PCB Mount (TO-263)° RthJA 58 70
Junction-to-Case Rtruc 5 6 'C/W
Junction-to-Lead Rthor, 16 20
Notes:
a. Package limited.
b. Duty cycle 2 1%.
c. When mounted on I" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
Document Number: 71085 www.vishay.com
S-20966-Rev. C, 01-Jul-02
SUP/SUB15PO1-52
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 “A -8
Gate Threshold Voltage VGS(m) 1/ros = I/ss, ID = -250 pA -0.45 V
Gate-Body Leakage ksss Vos = 0 V, VGs = i 8 V i 100 nA
VDs=-6.4 V,VGS=0V -1
Zero Gate Voltage Drain Current loss N/os = -6.4 V, VGs = 0 V, TJ = 125°C -50 “A
Vos-- -64VVGs=0V,Tv=1750C -150
VDs = -5 V, VGs = -4.5 V -25
On-State Drain Currenta ID(on) VDS = -5 V, VGS = -2.5 V -10 A
VGs = -A.5 V, b = -10 A 0.043 0.052
VGS = -A.5 V, ID = -10 A, TJ =125°C 0.065
Drain-Source On-State Resistance" roam) VGS = -4.5 V, ID = -10 A, TJ = 1750C 0.075 Q
I/ss = -2.5 V ID = -5 A 0.070
VGs---1.8 V,lD=-2A 0.105
Forward Transconductancea gfs Vros = -5 V, ID = -10 A 16 S
Dynamich
Input Capacitance Ciss 1300
Output Capacitance Coss VGS = 0 V, VDS = -A V, f= 1 MHz 430 pF
Reversen Transfer Capacitance Crss 245
Total Gate ChargeC Qg 10.5 15
Gate-Source Chargec Qgs VDs = -4 v, VGS = -4.5 V, ID = -10 A 1.6 no
Gate-Drain Chargec di 2
Turn-On Delay TimeC td(on) 10 20
Rise Timec tr VDD = -4 V, RL = 0.22 Q 16 25 ns
Turn-Off Delay Timec td(off) ID = -15 A, VGEN = -4.5 V, Rs = 2.5 Q 30 45
Fall Timec if 25 40
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current Is -15
Pulsed Current ISM -25 A
Forward Voltagea VSD IF = -15 A, VGs = 0 V -1.5 V
Reverse Recovery Time trr 45 75 ns
Peak Reverse Recovery Current IRWREC) lr: = -15 A, di/dt = 100 N113 -1 -1.5 A
Reverse Recovery Charge Qrr 0.023 0.056 “C
Notes:
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
www.vishay.com
Document Number: 71085
S-20966-Rev. C, 01-Jul-02
"ii=iir
VISHAY
SUP/SUB15P01-52
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
| D — Drain Current
g fs—Transconductance (S)
C — Capacitance (pF)
/// //
Output Characteristics
VDS - Drain-to-Source Voltage (V)
Transconductance
TC = -551
I',',',
0 5 10 15 20 25
VGS - Gate-to-Source Voltage (V)
Capacitance
"s---...........,
C "m--.-,
O 2 4 6 8
VDS - Drain-to-Source Voltage (V)
I D — Drain Current
rDS(on)— On—Resistance ( Q)
VGS — Gate—to—Source Voltage (V)
Transfer Characteristics
20 l l
TC = -55oC (/
16 25°C \1
"jii,')/ 12500
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 1.8 V
0.08 l/ss = 2.5 L,,,,,,,,,,----'
_..-...
VGS = 4.5 V
O 5 IO 15 20 25
ID - Drain Current (A)
Gate Charge
VDS = 4 V /
I = 10 A
6 D /"
4 //''''
O 4 8 12 16 20
% - Total Gate Charge (nC)
Document Number: 71085
S-20966-Rev. C, 01-Jul-02
www.vishay.com
SUP/SUB15P01-52
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
VGS = 4.5 V
b = 10 A
A 1.4 T J = 15000
t; " .i-f:
E 8 1.2 'c
h' 2 8
' E " b'
8 ss?.. 1.0 g
5’ // cn
-50 -25 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5
Tu - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
18 100.0
Ii.: 12 "ss. 'iii 10.0
g "ssc s
o 9 , o
l 6 I 1.0
TC = a
3 ) Single Pulse
0 25 50 75 100 125 150
Tc - Case Temperature (°C)
1.0 10.0
VDs - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
[t E 0.1
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71085
S-20966-Rev. C, 01-Jul-02
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