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SUM110N10-09
N-Channel 100-V (D-S) 200C MOSFET
VISHAY
SUM110N10-09
New Product
Vishay Siliconix
N-Channel 100-V (D-S) 200°C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (Q)
ID (A)
100 0.0095 @ VGS = 10 V
TO-263
Tophhew
SUM110N10-09
N-Channel MOSFET
FEATURES
. TrenchFET© Power MOSFETS
. 200°C Junction Temperature
. New Package with Low Thermal Resistance
APPLICATIONS
. Automotive
- 42-V Power Bus
- DC/DC Conversion
- Motor Drivers
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100
Gate-Source Voltage VGS :t 20 V
To = 25°C 110a
Continuous Drain Current (TJ = 175°C) ID
TC = 125°C 87a A
Pulsed Drain Current IDM 440
Avalanche Current IAR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
Tc = 25°C 437.5c
Maximum Power Dissipationb Pro W
TA = 25°Cd 3.75
Operating Junction and Storage Temperature Range Tu, Tsig -55 to 200 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient PCB Mount (TO-263)d RthJA 40
Junction-to-Case (Drain) RthJC 0.4
a. Package limited.
b Duty cycle 2 1%.
c. See SOA curve for voltage derating.
d When mounted on 1" square PCB (FR-4 material).
Document Number: 70677 www.vishay.com
S-04970-Rev. B, 29-Oct-01 1
SUM110N10-09
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS ITa =25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, ID = 250 pA 100 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 0A 2 4
Gate-Body Leakage less VDs = 0 V, Vss = i 20 V i 100 nA
VDS=80V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS Vos = 80 V, VGs = 0 M TJ = 125°C 50 It/k
VDS=80V,VGS=0V,TJ=200°C 10 mA
On-State Drain Currenta loam) VDS 2 5 V, VGS = 10 V 120 A
N/ss = 10 V, ID = 30 A 0.0078 0.0095
Drain-Source On-State Resistance" rDS(on) VGS = 10 V, ID = 30 A, To = 125°C 0.017 Q
VGS = 10 V, ID = 30 A, TJ = 200°C 0.025
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 S
Dynamicb
Input Capacitance Ciss 6700
Output Capacitance Coss VGS = 0 V, Vos = 25 V, f= 1 MHz 750 pF
Reverse Transfer Capacitance Crss 280
Total Gate Chargec % 110 160
Gate-Source Chargec Qgs VDS = 50 V, VGS = 10 V, ID = 85 A 24 nC
Gate-Drain Chargec di 24
Turn-On Delay Time0 tam) 20 30
Rise Timec tr VDD = 50 V, RL = 0.6 Q 125 200 ns
Turn-Off Delay Timec td(ott) k, E 85 A, VGEN = 10 V, Rs = 2.5 Q 55 85
Fall Tlmec tf 130 195
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current Is 110
Pulsed Current ISM 240 A
Forward Voltagea VSD IF = 85 A, VGs = 0 V 1.0 1.5 V
Reverse Recovery Time trr 70 140 ns
Peak Reverse Recovery Current IRWREC) lr: = 50 A, di/dt = 100 Alps 5.5 10 A
Reverse Recovery Charge Qrr 0.19 0.35 uC
a. Pulse test; pulse width s 300 ps, duty cycle
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
www.vishay.com
Document Number: 70677
S-04970-Rev, B, 29-Oct-01
VISHAY SUM110N10-09
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250 I 1 250
VGS=10thru7V 6V
200 l 200
Ci.:: ii-ii.."
g 150 g 150
Cl 100 D 100
f 5 v f Tc = 125°C )
50 50 _
25°C /
4 v l "'srd -55oC
O 2 4 6 8 IO 0 1 2 3 4 5 6 7
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
250 1 0.015
Tc = -551
200 m.,,,.----';"'""""" A 0.012
A w'"''''''" 25°C 9’,
2 ---cit--- a.)
g 150 / l f,-',. 0.009 Vss =10 V
g / 125°C 'g
g AV'''" m.......---------""'"''" 5
8 100 ,I o 0.006
t "ii,'
i'-', 50 / f 0.003
O 0.000
0 20 40 60 80 100 120 0 20 40 60 80 100 120
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
10000 20
v = 50 V o,,,,/'''''
8000 [8 16 - ID”: 85 A "
C? Ciss g
8 6000 i', 12
g 5 ,,,,/''"
8 4000 S,', 8 /
I tii'
2000 Crss 8 4
w" Coss >
0 25 50 75 100 0 50 100 150 200
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 70677
www.vishay.com
S-0497(r-Rev. B, 29-Oct-01
SUM110N10-09
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
VGS = 10 V
2.5 i b = 30 A 1
g, " A
8 2 0 l S
c A . E
I-',. l? ',,i''" 'l-l
8 E ,,,,,w'''' 8
L? E 1.5 I m
8 a " P,
E ',,r'''' g
A 1.0 I
w -,-'''' in
L 0.5 r,,,-''''"
-50 -25 0 25 50 75 100 125 150 175 200 0 0.3 0.6 0.9 1.2
T: - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Avalanche Current vs. TIme Junction Temperature
1000 125
I = 10 mA
100 D /
A 115 /1
|AV(A)@TA=25°C ty ',,r''"
m V) I
v a 110 "
o 10 al ,,,w''''
|AV(A)@TA= 150°C 105 ,,,,w"''"
0.1 90
0.00001 0.0001 0.001 0.01 0.1 1 -50 -25 0 25 50 75 100 125 150 175 200
tin (Sec) TJ - Junction Temperature (°C)
www.vishay.com DocumentNumber: 70677
S-04970-Rev, B, 29-Oct-01
VISHAY SUM110N10-09
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature 1000 Safe Operating Area
| D — Drain Current (A)
'ss, 100
Limited
by rDS(on)
40 "s,
l 1 Tc = 25''C
20 l Single Pulse
0 25 50 75 100 125 150 175 200 0.1 1 10 100 1000
| D — Drain Current (A)
Tc - Ambient Temperature (°C) Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
1 Duty Cycle = 0.5
I' a 0.1
tte - 0.1
g g _E ?-05
m o = 0.02
E fE t ,
k' Single Pulse
lo-A Io-:? Ity-2 IO-I 1 10
Square Wave Pulse Duration (sec)
Document Number: 70677 www.vishay.com
S-0497(r-Rev. B, 29-Oct-01 5
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