SUD50N03-07AP ,N-Channel 30-V (D-S) 175C MOSFETS-31271—Rev. C, 16-Jun-031SUD50N03-07APVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NO ..
SUD50N03-09P ,N-Channel 30-V (D-S) MOSFETS-31272—Rev. C, 16-Jun-033r - On-Resistance ( )DS(on) g - Transconductance (S)C - Capacitance ( ..
SUD50N03-10 ,N-Channel Enhancement-Mode TransSUD50N03-10SiliconixN-Channel 30-V (D-S), 175C MOSFETProduct SummaryV (V) r () I (A)DS DS(on) D0. ..
SUD50N03-10AP ,N-Channel 30-V (D-S) 175C MOSFET FaxBack 408-970-5600S-99628—Rev. A, 10-Jan-002-1SUD50N03-10APNew ProductVishay Siliconix
SUD50N03-07AP
N-Channel 30-V (D-S) 175C MOSFET
VISHAY
SUD50N03-07AP
Vishay Siliconix
N-Channel 30-V (D-S) 175°C MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)ans
0.007@VGs= 10V 81c
30 0.010 © N/ss = 4.5 v 67c
TO-252
Drain Connected to Tab
TopWew
Order Number:
SUD50N03-07AP
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS I20
TC = 25°C 81c
Continuous Drain Current (To = 175°C)a, b ID
TC = 100°C 57c
Pulsed Drain Current IBM 100
Continuous Source Current (Diode Conduction)", b Is 25
Tc = 25°C 88
Maximum Power Dissipation PD W
TA=25°C 8.3a,b
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 15 18
J ti -t -A bi F R
unc lon o m en Steady State thJA 40 50 °C/W
Junction-to-Case Rch 1.4 1.7
a. Surface Mounted on 1" x1" FR4 Board.
b. t s 10 sec.
c. Based on maximum allowable Junction Temperature. Package limitation current is 50A.
Document Number: 71148 www.vishay.com
S-31271-Rev. C, 16-Jun-03
SUD50N03-07AP VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 14A 30
Gate Threshold Voltage VGSW Vos = l/ss, ID = 250 LA 1.0 2.0
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V ch 100 nA
VDs=30V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=30V.VGS=0V,TJ=125°C 50
On-State Drain Currentb lD(on) VDS = 5 V, VGS = 10 V 50 A
Vas-- 10 V, ID=20A 0.007
Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, lo = 20 A, TJ = 125°C 0.011 Q
VGs=4-5 V, ID=20A 0.010
Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 20 S
Dynamica
Input Capacitance Ciss 3720
Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 715 pF
Reverse Transfer Capacitance Crss 370
Total Gate Charges % 28 45
Gate-Source Chargec Q95 VDS = 15 V, VGS = 4.5 V, ID = 50 A 12 n0
Gate-Drain Chargec di IO
Turn-On Delay Timec tum") 11 25
Rise Timec tr VDD = 15 V, RL = 0.3 Q 6 15 ns
Turn-Off Delay TimeC timgt) ID _ 50 A, VGEN = 10 V, Re = 2.5 Q 50 100
Fall Timec If 11 20
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 100
Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5
Source-Drain Reverse Recovery Time trr IF = 50 A, di/dt = 100 Afys 45 100 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 us. duty cycle s 2%.
C. Independent of operating temperature.
www.vishay.com Document Number: 71148
2 S-31271-Rev. C, 16-Jun-03
VISHAY SUD50N03-07AP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250 r 1 1 120
VGS=10thru6V 5V
Cai' Ci.:.] 80
E 150 E
0 AN 0 60
S 100 S Tc=125°C I
D t2 40
- 50 - 25°C I //
2 v 3 v 20 \I I
_ 1 5 -55°C
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage(V)
Transconductance On-Resistance vs. Drain Current
120 l 0.020
TC = -55°C
100 ---
o A 0.015
g.". /'''''" l 25 C E
8 80 I 8
!si. g
g 125°C E 4
g 60 if 0.010 Ves=4-5V --"''''"
3 w,,,,,-''''''''''"' é v =10V
E 40 I C) GS
“”2 F" J) 0.005
U) 20 9
0 0.000
0 IO 20 30 40 50 0 20 40 60 80 100
ID - Drain Current(A) ID - Drain Current(A)
Capacitance Gate Charge
5000 10
_ A v =15V
4000 Ciss 2, 8 - IUD: 50 A
8 3000 i', 6
o 2000 g 4 f
O " C O /
1000 's---....,..., oss 8 2
O 6 12 18 24 3O 0 12 24 36 48 60
VDS - Drain-to-Source Voltage(V) Qg - TotaIGate Charge(nC)
DocumentNumber: 71148 www.vishay.com
S-31271-Rev. C, 16-Jun-03 3
SUD50N03-07AP VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 I _ I 100
VGS = 10 V
ID = 30 A
A 1 6 l/ T J = 150°C
Cl " A
V w,,.''''' 5..t.t
r: A l u.)
m RD 1.2 t
E; 0N, " D
tD w u) 10
u; E ',,--'" F?
r: o / z:
o z 0 8 e o
I V / (l)
(l? 0.4 -
-50 -25 0 25 50 75 100 125 150 175 O 0.3 0.6 0.9 1.2
Ts - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature Safe Operating Area
30 1000
Limited by roswn)
Sic 100 I
24 'ss
as Ct"
"ie,' 18 "ss. "ie,' 10
E 12 "ss. E 1
D 'ts D
o N, Ln
6 TA = 25°C
0.1 Single Pulse
0 0.01
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature (°C) Vros - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
"if',' g
t E 0.1
Single Pulse
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71148
4 S-31271-Rev. C, 16-Jun-03
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