SUD40N10-25 ,N-Channel 100-V (D-S) 175C MOSFET FaxBack 408-970-5600S–00171—Rev. A, 14-Feb-002-1SUD40N10-25New ProductVishay Siliconix ..
SUD45N05-20L ,N-Channel Enhancement-Mode Trans, Logic Level FaxBack 408-970-5600S-57247—Rev. E, 23-Mar-982-1SUD45N05-20LVishay Siliconix
SUD40N10-25
N-Channel 100-V (D-S) 175C MOSFET
SUD4ON10-25
VISHAY
New Product
Vishay Siliconix
N-Channel 100-V (D-S) 175°C MOSFET
PRODUCT SUMMARY
Vros (V) rDS(on) (C2) ID (A)
0.025@VGS=10V 40
0.028 @ VGS = 4.5 v 38
TO-252
Drain Connected to Tab
Top View
Order Number:
SUD4ON10-25
“315““ “omgsee‘ s
'its,',,')''''"
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100
Gate-Source Voltage VGS i 20
To = 25°C 40
Continuous Drain Current (T: = 175”C)b ID
Tc = 125°C 23
Pulsed Drain Current IBM 70 A
Continuous Source Current (Diode Conduction) Is 40
Avalanche Current IAR 40
Repetitive Avalanche Energy (Duty Cycle s 1%) L = 0.1 mH EAR 80 m]
To = 25°C 33b
Maximum Power Dissipation Po W
TA = 25°C 33
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 15 18
Junction-to-Ambienta RthJA
Steady State 40 50 °CNV
Junction-to-Case Rthoc 1.2 1.5
a. Surface Mounted on I" x1" FR4 Board.
b. See SOA curve for voltage derating.
DocumentNumber: 71140
S-00171-Rev. A, 14-Feb-00
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SUD40N10 25 VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGs = O V, ID = 250 “A 100
Gate Threshold Voltage VGS(th) VDs = VGS, ID = 250 WA 1.0 3.0
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V i 100 nA
VDS=80V,VGS=0V 1
Zero Gate Voltage Drain Current Iross VDs = 80 V, VGS = 0 V, To = 125°C 50 WA
VDS=80V,VGS=0V,TJ=175°C 250
On-State Drain Currentb 'D(on) Vos = 5 V, VGS = 10 V 70 A
VGS = 10 V, ID = 40 A 0.02 0.025
VGS=1OV,ID=40A,TJ=125°C 0.05
Drain-Source On-State Resistanceb rDS(on) Q
VGS=10V,|D=4OA.TJ=175°C 0.063
VGS = 4.5 V, ID = 20 A 0.022 0.028
Forward Transconductanceb gfs VDS = 15 V, ID = 40 A 70 S
Dynamica
Input Capacitance Ciss 2400
Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 290 pF
Reverse Transfer Capacitance Crss 120
Total Gate ChargeC Q9 40 60
Gate-Source ChargeC Qgs Vos = 50 V, N/ss = 10 V, b = 40 A 11 n0
Gate-Drain Chargec di 9
Turn-On Delay Timec tam) 8 13
Rise Timec tr VDD = 50 V, RL = 1.25 g 40 60 ns
Turn-Off Delay Tlmec tam '0 - 40 A, VGEN = 10 V, Rs = 2.5 Q 15 25
Fall TimeC tf 80 120
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 70
Diode Forward Voltageb VSD IF = 40 A, VGS = 0 V 1.0 1.5
Source-Drain Reverse Recovery Time trr IF = 40 A, di/dt = 100 Alps 75 120 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width S 300 us, duty cycle s: 2%.
c. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 71140
2-2 S-00171-Rev, A, 14-Feb-00
VISHAY SUD4ON10 25
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
160 100
V = 10 thru 6 V l
GS ,:t,',C-. 5 v
",estr'' 80
a; tp'" Ct
E E 60
's 80 's
c pr c I
Es 4 V E 40 Tc = 125°C
I I a -550
Cl 40 1’ D 25 C C
_ - 20 'is:
0 2 4 6 8 IO 0 1 2 3 4 5
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
100 I I 0.05
TC = -55oC
80 - 0.04
VGS = 4.5 V
9 f5 — Tra nsconducta nce (S)
rDs(on)— On-ReSIstance( Q )
0 10 20 30 40 50 60 0 20 4O 60 80 100
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
4000 20
V = 50 V
3 16 - I Ftf 40A ow"'''
3000 g D "
ri-l" S'.
t; Ciss g 12
g 9 ',w'"
'ti 2000 (,8) /
ir g 8
I E w"
O 1000 o i"
Crss C (D
w" oss >
0 20 40 60 80 100 0 20 40 60 80
Vros - Drain-to-Source Voltage(V) Qg - Total Gate Charge (nC)
Document Number: 71140 www.vishay.com . FaxBack 408-970-5600
S-00171-Rev. A, 14-Feb-00
SUD40N10-25
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
VGS = 10 V
2.5 - ID = 40 A 1
o: /" A
v 2 0 op'' S...
g a I fi
I','-',. m ',,,,w'''' 's To =175°C
_ .u o
8 E 1.5 / a)
0F g " e
8 fe' / g
L V 1.0 ,
sf.?.. co
ill // -
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
T J - Junction Temperature CC) V3.3 - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature Safe Operating Area
50 100
Limited by rDs(on)
Ci:] "s, ct 10
E 30 _ E,
E "ss, 's
(i, 20 \ E
I "N I 1
O 25 50 75 100 125 150 175
TC - Case Temperature (°C)
TC = 25''C
Single Pulse
0.1 1 10 100 1000
Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
Thermal Impedance
\Single Pulse
Normalized Effective Transient
104 1o-3 10-2
IO-I 1 IO 30
Square Wave Pulse Duration (sec)
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DocumentNumber: 71140
S-00171-Rev, A, 14-Feb-00
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